Formation of α,α''''-Bis(substituted benzylidene)cycloalkanones from Masked Aldehydes Promoted by Samarium(III) Triiodide

~~Formation of α,α'-Bis(substituted benzylidene)cycloalkanones from Masked Aldehydes Promoted by Samarium(III) Triiodide~~     

Hydrogen peroxide biosensor based on electrodeposition of zinc oxide nanoflowers onto carbon nanotubes film electrode

A new amperometric biosensor for hydrogen peroxide was developed based on adsorption of horseradish peroxidase at the glassy carbon electrode modified with zinc oxide nanoflowers produced by electrodeposition onto multi-walled carbon nanotubes （MWNTs） film. The morphology of the MWNTs/nano-ZnO electrode has been investigated by scanning electron microscopy （SEM）, and the electrochemical performance of the electrode has also been studied by amperometric method. The resulting electrode offered an excellent detection for hydrogen peroxide at -0.11 V with a linear response range of 9.9×10^-7 to 2.9×10^-3 mol/L with a correlation coefficient of 0.991, and response time 〈5 s. The biosensor displays rapid response and expanded linear response range, and excellent stability.     

Electrochemical oxidation behavior of hydroxypivalaldehyde in the ionic liquids

The similar electrochemical oxidation behaviors of hydroxypivalaldehyde in ionic liquids （ILs） medium, C4MIMPF6, C4MIMBF4 and CsMIMPF6, are investigated using classic electrochemical methods, respectively. Only the product, hydroxypivalic acid is detected by high performance liquid chromatography （HPLC）. It can be conferred that the electrochemical oxidation of hydroxypivalaldehyde consists of two successive one-electron irreversible reactions at glass carbon （GC） electrode and the possible reaction mechanism in the ILs is proposed firstly. The diffusion coefficients of hydroxypivalaldehyde are obtained according to the electrochemical characteristics of hydroxypivalaldehyde in C4MIMPF6, C4MIMBF4 and CsMIMPF6.     

A Novel Synthesis of (-)-10-epi-α-Cyperone

The eudesmane derivative, (-)-10-epi-α-cyperone 1, is widely used as a chiral starting material for the synthesis of other fused-ring sesquiterpenes1. The first synthetic work was reported by Howe and co-workers via condensation of (+)-dihydrocarvone 2 with 1-diethylaminopentan-3-one methiodide in 32% yield2. Previously, our group reported the synthesis of compound 1 by treating ketone 2 with ethyl vinyl ketone (EVK) directly under different conditions1a, but the yields were not satisfacto…     

The Inclusion Interval of Basic Coneigenvalues of a Matrix

In this paper,a compound-type inclusion interval of basic coneigenvalues of(com- plex)matrix is obtained.The corresponding boundary theorem and isolating theorem are given.     

DSC and NMR Study on the Inclusion Complex of Lappaconitine with b-Cyclodextrin

Lappaconitine (Figure 1) is a diterpenoid alkaloid, naturally occurring in roots and rhizomes of Aconitum and delphinium1. Lap reveals bradycardic and hypotensive activity2. But its application is restrained owing to its poor water solubility, toxicity and side effects on humans. In a number of pharmaceutical studies, b-CD has been reported to interact with many drug molecules to form inclusion complexes for improving the water solubility of drugs, and reducing their toxicity3. We have p…     

FIBONACCI SEQUENCE AND CANTOR'S TERNARY SET

ＩＢＯＮＡＣＣＩＳＥＱＵＥＮＣＥＡＮＤＣＡＮＴＯＲ′ＳＴＥＲＮＡＲＹＳＥＴＴＯＮＧＪＩＮＧＣＨＥＮＧＳＡＭＯＮＳ，Ｊ．ＭａｎｕｓｃｒｉｐｔｒｅｃｅｉｖｅｄＳｅｐｔｅｍｂｅｒ１２，１９９４．ＲｅｖｉｓｅｄＤｅｃｅｍｂｅｒ１５，１９９６．Ｄｅｐａｒ...     

CONSTRUCTION OF SOLUTIONS TO M-D RIEMANN PROBLEMS FOR A2×2 QUASILINEAR HYPERBOLIC SYSTEM

ＣＯＮＳＴＲＵＣＴＩＯＮＯＦＳＯＬＵＴＩＯＮＳＴＯＭ－ＤＲＩＥＭＡＮＮＰＲＯＢＬＥＭＳＦＯＲＡ２×２ＱＵＡＳＩＬＩＮＥＡＲＨＹＰＥＲＢＯＬＩＣＳＹＳＴＥＭＣＨＥＮＳＨＵＸＩＮＧＭａｎｕｓｃｒｉｐｔｒｅｃｅｉｖｅｄＤｅｃｅｍｂｅｒ２６，１９９４．...     

多层溅射制备Wsix/Si薄膜的电阻率特性研究

利用多层溅射技术制备了ＷＳｉ_x／Ｓｉ薄膜，然后测量其平面电阻的退火行为，发现平面电阻在６００－７００℃之间退火后有陡降，这对应于非晶ＷＳｉ_x薄膜中Ｗ₅Ｓｉ₃四角相的形成。ｘ射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化，它和薄膜结构的变化有很好的对应关系。 关键词：     

分数维方法研究GaAs薄膜中的极化子

本文采用分数维方法, 在讨论Al_0.3Ga_0.7As衬底上GaAs薄膜的分数维基础上, 计算了GaAs薄膜中的极化子结合能和有效质量. 随着薄膜厚度的增加, 极化子结合能和质量变化单调地减小. 当薄膜厚度L_w<70 Å并且衬底厚度L_b<200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响比较显著, 随着衬底厚度的增加, 薄膜中极化子的结合能和质量变化逐渐变大; 当薄膜厚度L_w>70 Å或者衬底厚度L_b>200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响不显著. 研究结果为GaAs薄膜电子和光电子器件的研究和应用提供参考. 关键词： 分数维方法 GaAs薄膜 极化子 低维异质结构