| 多层溅射制备Wsix/Si薄膜的电阻率特性研究 |
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| 引用本文： | 王晓平,赵特秀,刘宏图,施一生,翁惠民,郭学哲.多层溅射制备Wsix/Si薄膜的电阻率特性研究[J].物理学报,1994,43(5):823-828. |
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| 作者姓名： | 王晓平 赵特秀 刘宏图 施一生 翁惠民 郭学哲 |
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| 作者单位： | (1)江苏盐城师范专科学校物理系; (2)中国科学技术大学近代物理系; (3)中国科学技术大学物理系 |
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| 摘 要： | 利用多层溅射技术制备了ＷＳｉx／Ｓｉ薄膜，然后测量其平面电阻的退火行为，发现平面电阻在６００－７００℃之间退火后有陡降，这对应于非晶ＷＳｉx薄膜中Ｗ5Ｓｉ3四角相的形成。ｘ射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化，它和薄膜结构的变化有很好的对应关系。
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| 关 键 词： | 硅化钨 薄膜 溅射 电阻率 |
| 收稿时间： | 1993-06-16 |
ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING |
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| WANG XIAO-PING,ZHAO TE-XIU,LIU HONG-TU,SHI YI-SHENG,WENG HUI-MIN and GUO XUE-ZHE.ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING[J].Acta Physica Sinica,1994,43(5):823-828. |
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| Authors: | WANG XIAO-PING ZHAO TE-XIU LIU HONG-TU SHI YI-SHENG WENG HUI-MIN and GUO XUE-ZHE |
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| Abstract: | Tungsten silicide films have been sputtered onto silicon substrate and annealed at temperature ranging from 400 to 1000℃ in vacuum. The structure and defect of each film is detected by X-ray diffraction (XRD) and positron annihilation technology (PAT), respectively. The sheet resistance has been measured and the result in-dicates that the sheet resistance of films decrease steeply as a result of annealing in the range of 600-700℃. This phenomenon corresponds to the crystallization of W5Ｓｉ3 tetragonal phase in films which has been certified by XRD. Electrical properties of films are sensitive to structure and defects in films and electrical measurement can be used as a good probe for the study on the characteristics of films. |
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