Q态硫化镉纳米晶的制备、形态、量子尺寸效应与光催化性能

分别引入辛基硫醇作配体, 十六烷基三甲基溴化铵(或四丁基溴化铵)作有机正离子合成CdS纳米簇合物. 采用后沉淀分离技术, 分别制备得到粒度分布窄、粒径2~5 nm的Q态CdS纳米晶粒. 用紫外吸收光谱、透射电子显微镜、小角X射线衍射来测定粒径的大小. 在紫外光谱、荧光光谱和X射线衍射上, 表现出明显的量子尺寸效应. 当粒径大到一定程度(大于10 nm)时, 量子尺寸效应就不明显. 用ESR研究Q态纳米粒子的光催化性能, 结果表明加入纳米硫化镉颗粒可明显促使甲醇、乙醇发生光催化反应, 释放出CH3-·CHOH(对乙醇体系)或·CH2OH(对甲醇体系), 在有机合成上有着重要的应用价值.     

希土与甘氨酸及2, 2''—联吡啶氮氧化物多元固体配合物研究

在非水介质中合成出希土氯化物、硝酸盐与甘氨酸及2,2 ′—联吡啶氮氧化物的多元固体配合物LnGly(BipyO_2)_2Cl_3·H_2O和LnGly(BipyO_2)_2(NO_3)_3·H_2O(Ln=La,Ce,Pr,Nd,Sm,Eu)通过元素分析、红外光谱、荧光光谱、DSC—TGA分析、溶解性及摩尔电导测定,研究了配合物的组成和性质.     

稀土冠醚类配合物的研究 XX: 三价及二价稀土硫氰酸盐与辛二酰双(4'-苯并-15-冠-5)配合物的合成和性质

在乙腈和二氯甲烷混合溶液中合成了三价稀土元素(La, Nd, Eu, Dy, Er, Yb)硫氰酸盐与辛二酰双(4'-苯并-15-冠-5)的六个新配合物。并在氩气氛中, 以四氢呋喃为溶剂, 锂-萘为还原剂, 制得了二价铕硫氰酸盐与辛二酰双(4'-苯并-15-冠-5)的固体配合物。通过元素分析、红外光谱、差热热重分析、荧光光谱、穆斯堡尔谱、电子自旋共振谱、还原性实验等研究了双冠醚与稀土离子的配位作用, 并讨论了三价和二价稀土配合物在物理化学性质上的差别。     

稀土与含硫有机配体配合物的研究(Ⅷ)——甘氨酸二硫代甲酸镍与稀土醋酸盐多核配合物的合成与性质

在乙醇—水溶液中,用稀土醋酸盐与氨基乙酸二硫代甲酸镍[H_2Ni(Gc)_2]反应,制备出14种稀土元素的多核配合物,通过元素分析确定了配合物的组成为RENi(Gc)_2·AC·H_2O(RE=La—Gd,除Ce、Pm外)和RE_2[Ni(Gc)_2]_3·xH_2O(RE=Tb—Lu,Y;x=4,8,10),研究了配合物的溶解性、红外光谱、X射线光电子能谱和核磁共振氢谱。     

1,8-萘啶氮氧化物钪(Ⅲ)配合物的合成与性质

在非水介质中合成出硝酸钪、高氯酸钪、硫氰酸钪和氯化钪与1,8-萘啶氮氧化物生成的固体配合物。通过元素分析、红外光谱、荧光光谱、摩尔电导测定和差热热重分析等方法研究了配合物的组成和性质。     

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer(IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells(MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth.It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.     

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.     

稀土与5-苯基吡唑啉二硫代甲酸固态配合物的合成与表征

在干燥氮气氛中 ,以 5 苯基吡唑啉二硫代甲酸钠和无水稀土氯化物为原料 ,乙腈为溶剂 ,制备出稀土与 5 苯基吡唑啉二硫代甲酸形成的 9个新型固态配合物 ,产率达 40 %以上。经元素分析、红外光谱、差热 热重分析和电导测定 ,确定其组成为 :Na[RE(S2 CNC9H9N) 4·xH2 O](RE =La～Dy ,Y ,除Ce和Pm外 ) ,配体是通过两个硫原子以双齿形式与稀土离子配位。热分析表明 ,配合物开始分解温度均低于配体的分解温度 ,说明配合物的热稳定性不如配体。配合物的乙腈溶液 (浓度为 1 2 4～ 1 32× 10 - 3mol·dm- 3)的摩尔电导值在 86～ 10 4Ω- 1 ·cm- 2 ·mol- 1 范围 ,配合物为 1∶1型电解质     

AlxGa1-x N/GaN调制掺杂异质结构的子带性质研究

通过低温和强磁场下的磁输运测量研究了Al_0.22Ga_0.78N/GaN调制掺杂异质结构中2DEG的子带占据性质和子带输运性质.在该异质结构的磁阻振荡中观察到了双子带占据现象，并发现2DEG的总浓度随第二子带浓度的变化呈线性关系.得到了该异质结构中第二子带被2DEG占据的阈值电子浓度为7.3×10¹²cm^-2.采用迁移率谱技术得到了不同样品的分别对应于第一和第二子带的输运迁移率.发现当样品产生应变弛豫时第一子带的电子迁移 关键词： AlGaN/GaN异质结 二维电子气 子带占据 输运迁移率     

Dark states and Aharonov-Bohm oscillations in multi-quantum-dot systems

We study the formation of dark states and the Aharonov-Bohm effect in symmetrically/asymmetrically coupled three-and four-quantum-dot systems.It is found that without a transverse magnetic field,destructive interference can trap an electron in a dark state.However,the introduction of a transverse magnetic field can disrupt the dark state,giving rise to oscillation in current.For symmetrically structured quantum-dot systems,the oscillation has a period of one flux quanta.But for asymmetrically structured dot systems,the period of oscillation is halved.In addition,the dephasing due to charge noise also blocks the formation of dark states,while it does not change the period of oscillation.