New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage |
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| Authors: | Li Qi;Li Hai-Ou;Tang Ning;Zhai Jiang-Hui;Song Shu-Xiang |
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| Affiliation: | Li Qi;Li Hai-Ou;Tang Ning;Zhai Jiang-Hui;Song Shu-Xiang;Guangxi Experiment Center of Information Science,Guilin University of Electronic Technology;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China;College of Electronic Engineering,Guangxi Normal University; |
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| Abstract: | A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS. |
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