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New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage 下载免费PDF全文
A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS. 相似文献
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设计了褶皱石墨烯波导结构激发表面等离子体激元,通过设计周期阵列结构实现了表面等离子体激元传播损耗的补偿.理论分析了周期阵列结构的表面等离子体激元传播模型和补偿损耗的方式,结果表明褶皱衍射激发表面等离子体激元波导不仅能够激发表面等离子体激元,还能利用表面等离子体激元波矢关系实现器件参数控制,周期阵列增益全程补偿损耗的方式可以显著增加表面等离子体激元的传播距离.数值分析结果进一步表明:该结构具备了保持亚波长尺寸的强局域化优势;周期阵列增益全程补偿可以显著提高纳米腔中的电场强度,降低传输损耗;波导结构的粒子反转水平较高,自发辐射噪声的扰动较低.设计的石墨烯波导器件可以为微纳光学集成、光子传感和测量等领域提供理想的亚波长光子器件. 相似文献
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