Analytical model of amplitude-weighted array technology in forming symmetrical radiation patterns

A method on amplitude-weighted array technology is proposed based on an analytical formula in which the radiation amplitudes of array elements are evaluated analytically by a random symmetrical far-field radiation pattern. Using this formula, any desired spatial radiation pattern in the far field could be built by applying the analytical solutions of radiation amplitudes of array elements. To check the validity of this formula as well as the proposed technique, an annular intensity distribution as target far-field pattern is designed, and the respective radiation amplitude of array elements are determined by solving the formula analytically. The available far-field pattern is calculated by applying these solutions and then compared with the target far-field pattern. The theoretical results show the capabilities of the analytical derivation as well as the proposed techniaue in formin~ specific radiation Patterns.     

First-Principles Calculation of Electronic Structure and Optical Properties of Sb-Doped ZnO

The geometric structure, electronic structure, optical properties and the formation energy of Sb-doped ZnO with the wurtzite structure are investigated using the first-principles ultra-soft pseudo-potential approach of plane wave based upon the density functional theory. The calculated results indicate that the volume of ZnO doped with Sb becomes larger, and the doping system yields the lowest formation energy of Sb on the interstitial site and the oxygen site. Furthermore, Sb dopant first occupies the octahedral oxygen sites of the wurtzite structure. It is found that Sb substituting on oxygen site behaves as a deep acceptor and shows the p-type degenerate semiconductor character. After doping, the electron density difference demonstrates the considerable electron charge density redistribution, which induces the effect of Sb-doped ZnO to increase the charge overlap between atoms. The density of states move towards lower energy and the optical band gap is broadened. Our culated results are in agreement with other experimental results and could make more precise monitoring and controlling possible during the growth of ZnO p-type materials.     

In、Sc掺杂对SrTiO_3电子结构和光学性质的影响(英文)

采用基于密度泛函理论的第一性原理平面波超软赝势计算方法,研究了In、Sc p型掺杂对SrTiO_3母体化合物稳定性、电子结构和光学性质的影响.计算结果表明:掺杂后,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3的稳定性降低,体系显示p型简并半导体特征,掺杂仅引起杂质原子近邻区域的几何结构发生变化.同时,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的光学带隙分别展寬0.35、0.30 eV,光学吸收边发生蓝移,在1.25.2.00 eV的能量区间出现新的吸收峰,该吸收峰与体系Drude型自由载流子的激发相关.此外,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的可见光透过率有了明显的提高,在350-625 nm波长范围透过率高于85%.掺杂原子在费米能级处低的电子态密度限制了跃迁概率和光吸收.大的禁带宽度、小的跃迁概率和弱的光吸收是SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系具有较高光学透明度的原因.     

水浴法制备ZnO纳米棒及其场发射性能

用硝酸锌(Zn(NO3)2·6H2O)与六亚甲基四胺(C6H12N4)以等浓度配制成反应溶液,通过水浴法制备出了形貌可控的棒状ZnO纳米结构,讨论了不同反应浓度及衬底对ZnO表面形貌的影响.样品的XRD和扫描电子显微镜分析结果表明,所得产物均为六方纤锌矿结构,在有晶种层的衬底上制备出的ZnO纳米棒沿(001)方向并垂直于衬底表面生长.随着反应浓度的增加,ZnO纳米棒的直径增大,长径比减小.样品的场发射性能测试表明,反应溶液浓度为0.005 mol/L,以铜膜为晶种层的硅衬底上制备出的场发射阴极具有较好的场发射性能.     

PbxSr1-xTiO3的电子结构

在广义梯度近似下, 采用基于密度泛函理论框架下的超软赝势平面波和虚拟晶体近似方法, 计算了不同Pb/Sr摩尔比的PbxSr1-xTiO3(PST)固溶体的精细结构, 确定了A位离子在铁电相的平衡构型. 利用虚拟晶体近似方法分别计算了摩尔比x为0.6、0.7的PbxSr1-xTiO3精细结构. 结果表明, 在钛酸锶铅固溶体中, 随着Pb的摩尔比增大, 晶胞体积膨胀, c/a值增大. 当0.6相似文献   

场致发射中金刚石与金属的热粘接技术研究

以分析市场对显示器件的需求为基础,为了寻找适合场致发射的最佳材料,对金刚石粉的晶体结构、颗粒形貌和尺寸进行了分析,得知其微观形貌正好满足场致发射的理论要求.由于制备大面积纳米晶体金刚石薄膜材料的周期很长,且晶体金刚石的电阻率很大并很难掺入杂质,我们选用金刚石纳米粉和能够适合大面积、大批量生产的热粘工艺,从实验上研究并确定了金刚石与金属热粘工艺的可行性,为场致发射器件的研制提供了可靠的实验依据.     

ZnO-SnO2透明导电薄膜的制备及性能研究

采用二步成胶工艺制备ZnO-SnO₂透明导电薄膜,应用X射线衍射、原子力显微镜、紫外-可见分光光度计、薄膜分析仪及四探针仪等对薄膜的结构、表面微观形貌、透过率和导电性能进行表征.结果表明,锌锡摩尔比为9/12,退火温度为500 ℃时,薄膜的透过率达90%,电阻率为3.15×10-3 Ω·cm.与其它工艺相比,二步成胶工艺所制备出的ZnO-SnO₂透明导电薄膜性能优异.     

硒化镉单晶体的研究进展

总结了CdSe单晶体的多种生长方法,包括温度梯度熔体法,移动区熔法,助熔剂法和气相提拉法等,其中气相提拉法能有效提高CdSe单晶体的晶体纯度及光学质量.介绍了CdSe晶体用于红外非线性光学器件以及室温核辐射探测器件的研究进展,并对CdSe晶体制作中红外偏振测量用波片进行了展望.     

碳酸钠-氧化锌半熔分解的改进及其应用

重晶石难溶于酸,硫酸钡重量法测定含重晶石矿物中的硫含量一直都是岩矿分析的难点。文中以几种典型重晶石样品,采用碳酸钠-氧化锌半熔分解法测定重晶石样品中总硫的回收率。通过优化实验参数,使重晶石中的硫转化浸出彻底,总硫的回收率达到99.5%,实验RSD低于1%,改变了前人普遍认为的碳酸钠-氧化锌半熔方法不适用于含重晶石和元素硫的样品含硫量测定的认识,大大拓宽了碳酸钠-氧化锌半熔分解法的适用范围。     

用于天文成像探测的IRFPA性能参数测试

天体的红外成像探测在天文学领域中有其特殊和重要的作用,高性能红外探测器是红外天文观测的关键器件,因此红外焦平面阵列探测器性能参数的测试评价对于红外天文观测具有非常重要的意义。针对天文应用的特殊性,通过分析红外焦平面阵列(Infrared focal plane array,IRFPA)探测器的特点,给出了增益、读出噪声、线性和暗流等性能参数的测试原理和方法,建立了测试平台,该测试平台可实现1~14μm波长范围的IRFPA探测器性能参数测试;完成了一台采用国产3~5μm HgCdTe芯片研制的IRFPA探测器性能参数的测试。测试结果表明,该IRFPA探测器的线性度非常好,可以达到99.9%以上,但读出噪声和暗电流较大,与国外为天文观测研制的高性能探测器相比尚有很大的差距。