ZnO-SnO_2透明导电薄膜的制备及性能研究

采用二步成胶工艺制备ZnO-SnO_2透明导电薄膜,应用X射线衍射、原子力显微镜、紫外-可见分光光度计、薄膜分析仪及四探针仪等对薄膜的结构、表面微观形貌、透过率和导电性能进行表征.结果表明,锌锡摩尔比为9/12,退火温度为500 ℃时,薄膜的透过率达90%,电阻率为3.15×10~(-3) Ω·cm.与其它工艺相比,二步成胶工艺所制备出的ZnO-SnO_2透明导电薄膜性能优异.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

连续激光辐照下二氧化钒薄膜热致相变实验研究

 介绍了VO₂薄膜的相变原理，用磁控离子溅射法制备了VO₂薄膜，并进行了X射线衍射和不同温度下的光谱透过率测量。在1.319 μm 连续波激光辐照下，实时测量了VO₂薄膜的温度变化，以及由于温度变化引起相变后对激光透过率的变化。结果表明，入射到薄膜表面的平均功率为8.9 W、光斑直径2 mm时，激光出光480 ms后，VO₂的温度从室温上升到约100 ℃，薄膜发生了相变，其对1.319 μm激光的透过率从相变前的48％降为相变后的28％。     

Zn掺杂β-Ga2O3薄膜的制备和特性研究

β-Ga₂O₃是一种宽带隙半导体材料,能带宽度E_g≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga₂O₃薄膜为多晶结构,与本征β-Ga₂O₃薄膜相比,Zn掺杂β-Ga₂O₃薄膜的β-Ga₂O₃(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga₂O₃薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga₂O₃薄膜中的Zn原子被激活充当受主。     

水含量对溶胶-凝胶SiO2增透膜结构和性能的影响

利用正硅酸乙脂(TEOS)的碱催化,溶胶-凝胶法制备多孔SiO₂增透膜.较详细地研究了工艺参量H₂O/TEOS摩尔比对薄膜结构和性能的影响.结果表明,随H₂O/TEOS摩尔比的增大,薄膜厚度、折射率和致密度减小;而薄膜透射率增大.     

不同氧气流量对直流磁控溅射TiO2薄膜的影响

采用直流反应磁控溅射法,以高纯Ti为靶材,高纯O₂为反应气体,制备了TiO₂薄膜.研究了氧气流量对薄膜结晶取向、表面形貌和光学性能的影响.研究发现,TiO₂薄膜主要呈锐钛矿TiO₂(101)择优取向,当氧气流量较小时,薄膜中还含有金属Ti(100),氧气流量较大时,薄膜含TiO₂(101)和TiO₂(004),成多晶态;薄膜的粗糙度和颗粒大小都随氧气流量的增大而增大;薄膜在400~1100nm可见-近红外波段有较高的透射率并且其吸收峰随着氧气流量的增大而红移,当氧气流量为5sccm时,平均透射率最高.     

电子束蒸镀氧化铟透明导电薄膜

用电子束蒸发掺SnO2氧化铟靶,可以制得性能良好的透明导电薄膜,电阻率在2.5-3.5×10-4Ωcm,可见光透过率达90%.这种导电薄膜能代替SnO2透明导电薄膜,并优于SnO2导电薄膜. 本文着重研究了影响氧化铟透明导电薄膜导电性、透光性的主要因素,为获得性能良好的透明导电薄膜提供了重复性较好的工艺条件.]     

脉冲激光沉积温度及氧压对Bi2Sr2Co2Oy热电薄膜晶体结构与电输运性能的影响

利用脉冲激光沉积技术在c-Al₂O₃单晶基片上制备了Bi₂Sr₂Co₂O_y热电薄膜并研究了沉积温度和氧压对薄膜晶体结构及电输运性能的影响.在最佳沉积条件下制备的单相、c轴取向的Bi₂Sr₂Co₂O_y薄膜的室温电阻率ρ和塞贝克系数S分别为2.9mΩ/cm和110μupV/K,其功率因子S²/ρ好于在单晶样品上得到的值.此外,该薄膜在低温下表现出较强的负磁阻效应,在2K,9T时达到了40%.     

非晶SnO2：(Cu，In)薄膜的荧光特性及带尾态

用反应蒸发法在玻璃等衬底上制备出铜和铟掺杂的氧化锡SnO₂：(Cu,In)薄膜.对制备薄膜的发光性质做了研究,制备样品为非晶态,具无定形结构.测量了薄膜在220—1100nm范围的透过率,得到的带隙宽度E^opt_g=4.645eV.室温条件下对样品进行光致发光测量,得到了显著的紫外(276—550nm)蓝绿光连续谱,通过发光谱的研究给出了这种材料的隙态分布.     

不同氮流量制备Mn3CuNx薄膜及其电、磁输运性质的研究

采用对靶磁控溅射方法在单晶Si(100)基片上制备了反钙钛矿结构的Mn₃CuN_x薄膜.通过控制制备过程中的反应气体氮气(N₂) 流量(N₂/Ar+N₂), 研究了氮含量对Mn₃CuN_x薄膜结构及物理性能的影响.分别利用X射线衍射仪、俄歇电子能谱、 原子力显微镜、X射线光电子能谱、物理性能测试系统和超导量子干涉仪, 对所制备薄膜的晶体结构、成分、表面形貌和电、磁输运性质进行了测试.结果表明:制备的薄膜均为反钙钛矿立方结构,且沿 (200) 晶面择优生长.随着氮含量的增大,薄膜表面粗糙度和颗粒度尺寸逐渐增大, 导致电阻率增加.氮含量对薄膜的电输运性质没有影响,所有薄膜电阻率均随着温度的降低逐渐增大, 呈现半导体型导电行为,这与对应的块体材料结果相反.Mn₃CuN_x薄膜随着测试温度的增大发生了 亚铁磁到顺磁的磁转变,且N含量的增大降低了磁有序转变温度,主要是由于N缺陷对Mn₆N八面体结构中 磁交换作用的影响所致.     

Optical and hydrophilic properties of Cr doped TiO2-SiO2 nanostructure thin film

Cr doped TiO₂-SiO₂ nanostructure thin film on glass substrates was prepared by a sol-gel dip coating process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to characterize the structural and chemical properties of the films. A UV-vis spectrophotometer was used to measure the transmittance spectra of the thin film. The hydrophilicity of the thin film during irradiation and storage in a dark place was measured by a contact angle analyzer. The results indicated that Cr doping has a significant effect on the transmittance and super-hydrophilicity of TiO₂-SiO₂ thin film.     

Preparation and photo-induced superhydrophilicity of composite TiO2-SiO2-In2O3 thin film

In this work, TiO₂-SiO₂-In₂O₃ composite thin films on glass substrates were prepared by the sol-gel dip coating process. X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the structural and chemical properties of the films. UV-vis spectrophotometer was used to measure the transmittance spectra of thin films. The water contact angle (WCA) of thin films during UV/vis irradiation and storage in a dark place was measured by a contact angle analyzer. The results indicated that fabrication of composite film has a significant effect on transmittance and superhydrophilicity of TiO₂ films.     

氢气引入对宽光谱Mg和Ga共掺杂ZnO透明导电薄膜的特性影响

为适应宽光谱高效率硅基薄膜太阳电池的应用需求,本文尝试采用直流磁控溅射技术在553 K衬底温度下生长氢化Mg和Ga共掺杂ZnO(HMGZO)透明导电氧化物(TCO)薄膜.通过对薄膜微观结构、表面形貌、电学以及光学性能的测试和分析,详细地研究了氢气(H2)流量(0—16.0 sccm)对HMGZO薄膜结晶特性及光电性能的影响.实验结果表明:生长获得的HMGZO薄膜均为六角纤锌矿结构的多晶薄膜,择优取向为(002)晶面生长方向.薄膜的生长速率随着氢气流量的增加呈现逐渐减小趋势,主要归因于溅射产额的减小.适当的氢气引入会引起晶粒尺寸的增加.随着氢气流量由0增加至4.0 sccm,ZnO薄膜电阻率从177?·cm急剧减小至7.2×10-3?·cm,主要是由于H施主的引入显著地增加了载流子浓度;然而进一步增加氢气流量(4.0—16.0 sccm)造成电阻率的轻微增加,主要归因于载流子浓度的减小以及过多氢杂质引入造成杂质散射的增加.所有生长获得的HMGZO薄膜平均光学透过率在波长λ～320—1100 nm范围内可达87%以上.由于Mg的作用及Burstein-Moss效应的影响造成了带隙展宽,带隙变化范围～3.49—3.70 eV,其中最大光学带隙Eg可达～3.70 eV.     

Structure, morphology and optical properties of SiO2−x thin films prepared by plasma-assisted pulsed laser deposition

The amorphous silicon oxide SiO_2−x thin films were prepared by the plasma-assisted pulsed laser deposition (PLD) method. X-ray diffraction spectrometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-VIS-NIR scanning spectrophotometry and ellipsometry were used to characterize the crystallinity, microscopic morphology and optical properties of obtained thin films. The influences of substrate temperatures, oxygen partial pressures and oxygen plasma assistance on the compositions of silicon oxide (SiO_2−x) thin films were investigated. Results show that the deposited thin films are amorphous and have high surface quality. Stoichiometric silicon dioxide (SiO₂) thin film can be obtained at elevated temperature of 200 °C in an oxygen plasma-assisted atmosphere. Using normal incidence transmittance, a novel and simple method has been proposed to evaluate the value of x in transparent SiO_2−x thin films on a non-absorbing flat substrate.     

Transparent nano composite PVA–TiO2 and PMMA–TiO2 thin films: Optical and dielectric properties

Transparent nano composite PVA–TiO₂ and PMMA–TiO₂ thin films were prepared by an easy and cost effective dip coating method. Al/PVA–TiO₂/Al and Al/PMMA–TiO₂/Al sandwich structures were prepared to study the dielectric behavior. The presence of metal–oxide (Ti–O) bond in the prepared films was confirmed by Fourier transform infrared spectroscopy. X-ray diffraction pattern indicated that the prepared films were predominantly amorphous in nature. Scanning electron micrographs showed cluster of TiO₂ nanoparticles distributed over the film surface and also there were no cracks and pin holes on the surface. The transmittance of the films was above 80% in the visible region and the optical band gap was estimated to be about 3.77 eV and 3.78 eV respectively for PVA–TiO₂ and PMMA–TiO₂ films by using Tauc's plot. The determined refractive index (n) values were between 1.6 and 2.3. High value of dielectric constant (?′ = 24.6 and ?′ = 26.8) was obtained for the prepared composite films. The conduction in the composite films was found to be due to electrons. The observed amorphous structure, good optical properties and dielectric behavior of the prepared nano composite thin films indicated that these films could be used in opto-electronic devices and in thin film transistors.     

Characterization of ZnO-SnO2 thin film composites prepared by pulsed laser deposition

Thin films of ZnO-SnO₂ composites have been deposited on Si(1 0 0) and glass substrates at 500 °C by pulsed laser ablation using different composite targets with ZnO amount varying between 1 and 50 wt%. The effect of increasing ZnO-content on electrical, optical and structural properties of the ZnO-SnO₂ films has been investigated. X-ray diffraction analysis indicates that the as-deposited ZnO-SnO₂ films can be both crystalline (for ZnO <1 wt%) and amorphous (for ZnO ≥ 10 wt%) in nature. Atomic force microscopy studies of the as-prepared composite films indicate that the surfaces are fairly smooth with rms roughness varying between 3.07 and 2.04 nm. The average optical transmittance of the as-deposited films in the visible range (400-800 nm), decreases from 90% to 72% for increasing ZnO concentration in the film. The band gap energy (E_g) seems to depend on the amount of ZnO addition, with the maximum obtained at 1 wt% ZnO. Assuming that the interband electron transition is direct, the optical band gap has been found to be in the range 3.24-3.69 eV for as-deposited composite films. The lowest electrical resistivity of 7.6 × 10⁻³ Ω cm has been achieved with the 25 wt% ZnO composite film deposited at 500 °C. The photoluminescence spectrum of the composite films shows a decrease in PL intensity with increasing ZnO concentration.     

Transparent conducting hybrid thin films fabricated by layer-by-layer assembly of single-wall carbon nanotubes and conducting polymers

The effect of conducting polymers on the performance of transparent conducting SWNT thin films fabricated by the layer-by-layer (LBL) assembly has been investigated. Transparent conducting SWNT thin films were fabricated by the LBL assembly in two ways, one using conducting polymers, PEDOT-PEG, and the other using non-conducting polymers, PAH, and their electrical and optical properties were compared. The sheet resistance of (PSS-SWNT/PEDOT-PEG) _n films is more than thrice lower than that of (PSS-SWNT/PAH) _n films for the same n while the decrease of optical transmittance due to the absorbance of PEDOT-PEG is fairly small (ca. 2?% at n=30). The conductivity ratio of the (PSS-SWNT/PEDOT-PEG)₃₀ is 3.3 times larger than that of the (PSS-SWNT/PAH)₃₀. These figures indicate that the performance of the transparent conducting SWNT thin films fabricated by the LBL assembly is highly improved by using conducting polymers instead of non-conducting ones.     

Preparation and characterization of the ZnO:Al/Fe65Co35/ZnO:Al multifunctional films

The ferromagnetic transparent conducting film is a multifunctional film which has high visible transmittance, low resistivity and room-temperature ferromagnetism, simultaneously. In this article, ferromagnetic transparent conducting ZnO:Al/Fe₆₅Co₃₅/ZnO:Al multilayer films were fabricated by inserting a middle magnetic Fe₆₅Co₃₅ layer into aluminum-doped zinc oxide (ZnO:Al) matrix using a magnetron sputtering apparatus at substrate temperature ranging from room temperature (RT) to 400^∘C. The total film thickness was about 400 nm and the middle Fe₆₅Co₃₅ alloy layer was 4 nm. The influences of substrate temperature (T _s ) on the structural, electrical, optical and magnetic properties of the multilayer films were systemically investigated. The results showed that the microstructure and performance of the composite multilayer films strongly depended on the substrate temperature. The present results also showed that the inserted middle Fe₆₅Co₃₅ alloy thin layer played an important role in providing the RT ferromagnetism and decreasing the resistivity of the multilayer films. Therefore, it is possible to obtain a multifunctional film material with the combination of good optical transparency, high electrical conductivity and RT ferromagnetism.     

Structural, optical and electrical properties of Cd-doped SnO2 thin films grown by RF reactive magnetron co-sputtering

Transparent conducting SnO₂:Cd thin films were prepared by RF reactive magnetron co-sputtering on glass slides at a substrate temperature of 500 °C using CdO as cadmium source. The films were deposited under a mixed argon/oxygen atmosphere. The structural, optical and electrical properties were analyzed as a function of the Cd amount in the target. The X-ray diffraction shows that polycrystalline films were grown with both the tetragonal and orthorhombic phases of SnO₂. The obtained films have high transmittance and conductivity. The figure of merit of SnO₂:Cd films are in the order of 10⁻³ Ω⁻¹, which suggests that these films can be considered as candidates for transparent electrodes.