| ZnO-SnO2透明导电薄膜的制备及性能研究 |
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| 引用本文： | 王峰,张志勇,阎军峰,李林,贠江妮.ZnO-SnO2透明导电薄膜的制备及性能研究[J].光子学报,2014,38(12):3121-3125. |
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| 作者姓名： | 王峰 张志勇 阎军峰 李林 贠江妮 |
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| 作者单位： | (西北大学 信息科学与技术学院,西安 710127) |
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| 基金项目： | 西安市应用材料创新基金(XA-AM-200712)和西北大学研究生创新教育资助项目(08YJC11)资助 |
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| 摘 要： | 采用二步成胶工艺制备ZnO-SnO2透明导电薄膜,应用X射线衍射、原子力显微镜、紫外-可见分光光度计、薄膜分析仪及四探针仪等对薄膜的结构、表面微观形貌、透过率和导电性能进行表征.结果表明,锌锡摩尔比为9/12,退火温度为500 ℃时,薄膜的透过率达90%,电阻率为3.15×10-3 Ω·cm.与其它工艺相比,二步成胶工艺所制备出的ZnO-SnO2透明导电薄膜性能优异.
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| 关 键 词： | 二步法 ZnO-SnO2 锌锡摩尔配比 透明导电薄膜 |
| 收稿时间： | 2009-01-13 |
Preparation and Characterization of ZnO-SnO2 Transparent and Conducting Thin Film |
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| WANG Feng,ZHANG Zhi-Yong,YAN Jun-Feng,LI Lin,YUN Jiang-Ni.Preparation and Characterization of ZnO-SnO2 Transparent and Conducting Thin Film[J].Acta Photonica Sinica,2014,38(12):3121-3125. |
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| Authors: | WANG Feng ZHANG Zhi-Yong YAN Jun-Feng LI Lin YUN Jiang-Ni |
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| Institution: | (School of Information Science and Technology,Northwest University,Xi′an 710127,China) |
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| Abstract: | Transparent and conducting polycrystalline oxide thin films of ZnO-SnO2 are prepared on glass subsrate by the process of gelatination in two-step.The crystalline structure of the thin film, surface morphology, optical transmittance and conductivity are characterized by X-ray diffraction(XRD), Atomic force microscope(AFM), Spectrophotometeric analysis(UV-Vis),device of film analysis and Four-point probes, respectively.The results indicate that the transparent conducting thin film with Zn/Sn=9/12 has the optimal performance at the annealing tempareture of 500 ℃ and the ultraviolet-visible light transmittance reached 90% with 3.15×10-3 Ω·cm resistance.Compared with other methods,transparent and conducting thin films of ZnO-SnO2 prepared by gelatination in two-step has excellent characteristics. |
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| Keywords: | Gelatination in two-step ZnO-SnO2 Moore ratio of zinc and stannum Transparent and conducting thin film |
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