富硅氮化硅薄膜的荧光发射

室温下在3．45eV的激光激发下,对950℃温度下淀积的LPCVD富硅的SiNx薄膜中,观测到5个高强度的可见荧光的发射。其峰位位置分别为2．7,2．69,2．4,2．3,2．1eV。通过TEM、IR、XPS等的分析研究表明,该样品为纳米硅镶嵌结构的a-SiNx：H复合膜,分析了其微结构的成因及其与膜内应力之间的相互关系。经过1000～1200℃快速退火(RTA)处理,原PL谱蓝移并只出现了峰位为3．0,2．8eV的两个紫蓝色荧光的发射,用能隙态模型对此结果做了初步的分析和讨论。认为薄膜中纳米硅团簇的密度、尺寸的变化和亚稳态缺陷态对其PL峰以及膜应力起着十分重要的作用。     

Analysis of Optical Readout Sensitivity for Uncooled Infrared Detector

An optical readout uncooled infrared detector, employing a substrate-free focal plane array with pitch size 60μm, is established. The reflector deformation induced by the stress mismatching of the bi-layer structure is discussed and, in turn, a universal solution to determine both the optical readout sensitivity and the optimal filter position is found. By applying this solution, the optical readout sensitivity for the ideal plane reflector could theoretically increase by 80% as compared with the conventional operation, and the sensitivity loss caused by the reflector deformation can also be reduced to a reasonable level.     

无基底焦平面阵列的红外成像性能分析

利用提出的光学读出非制冷红外成像系统,先后制作了单元尺寸各不相同的单层膜无基底焦平面阵列(focal plane array,FPA),获得了室温物体的热图像.分析发现,当FPA的单元尺寸从200μm逐渐减小到60μm时,基于恒温基底模型的理论响应与实验结果的偏差逐渐增大.通过有限元分析方法,模拟分析了不同尺寸的微梁单元在无基底FPA中的热学行为,发现了当单元尺寸逐渐减小时恒温基底模型偏差逐渐增大的原因,即无基底FPA的支撑框架不满足恒温基底条件,受热辐射后支撑框架的温升从基底上抬高了单元的温升.论文还分 关键词： 光学读出 非制冷红外成像 焦平面阵列 无基底     

集群产业集成化过程的知识共享问题研究

集群产业集成过程是集成参与企业知识整合的过程.对集群产业集成过程中知识共享问题的研究,可较为深入的揭示集成过程中企业间协同的本质.本文通过设计知识信号机制并构建定量的优化模型,分析了集成化过程中知识共享的各影响因素间的作用关系.结果表明,在合理的知识信号机制和知识共享收益机制的指导下,集成参与企业会根据知识要素间的作用关系做出合理的知识共享决策.     

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy(SIMS) analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio N_(it)/N_(ot) are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo(kMC) method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.     

Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.     

四节点元和八节点h－收敛的比较

本文从理论上比较了四边形四节点元和四边形八节点元的ｈ－收敛性，得出八节点元较四节点元有较快收敛率的结论．并通过算例进行了验证．     

SiH_2Cl_2-NH_3配比对a-SiN_x∶H薄膜PL峰的影响

低压化学气相沉积制备的纳米硅镶嵌结构的a-S iNx∶H薄膜,在3.75 eV的激光激发下,室温下发射1~3个高强度的可见荧光。在相同的沉积温度下(900℃),选择不同的S iH2C l2和NH3气体配比时,所得薄膜表现出不同的荧光属性,荧光峰的峰位和数目有着显著的变化。通过TEM、IR、XPS等分析手段对其原因进行了研究分析,认为不同配比下,生成的薄膜中缺陷态的种类和密度有所不同,这影响了其PL峰个数及其各峰的相对强弱。     

用于平板和圆柱壳分析的势能—杂交／混合分离位移有限元格式

本文基于势能～杂交/混合有限元格式,导出了具有分离转动变量的4节点四边形Reissner-Mindlin板元MP4、MP4a和圆柱壳元MCS4.所有这些单元都显示了良好的收敛性;不含有多余机动模式;当趋于薄板/壳极限时,不存在“自锁”现象.本文还指明了在C~0和C~1连续的单元列式中使用的修正泛函,存在相互联系.本文的方法可导出Prathap的一致场列式,也可导出RIT/SRIT的位移协调模型.     

实噪声参激一类余维2分叉系统的最大Lyapunov指数(Ⅱ)

对于三维中心流形上实噪声参激的一类余维2分叉系统,为使模型更具有一般性,取系统的参激实噪声为一线性滤波系统的输出-零均值的平稳高斯扩散过程,满足细致平衡条件.并在此基础上首次使用Arnold的渐近方法以及Fokker-Planck算子的特征谱展式,求解不变测度以及最大的Lyapunov指数的渐近展式.