Temperature dependences of optical properties,chemical composition,structure,and laser damage in Ta2O5 films

Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures,annealing temperatures,and annealing times.The effects of temperature on the optical properties,chemical composition,structure,and laserinduced damage threshold(LIDT) are systematically investigated.The results show that the increase of deposition temperature decreases the film transmittance slightly,yet annealing below 923 K is beneficial for the transmittance.The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K.While an interesting near-crystalline phase is found when annealed at 923 K.The LIDT increases with the deposition temperature increasing,whereas it increases firstly and then decreases as the annealing temperature increases.In addition,the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT,which is mainly due to the improvement of the O/Ta ratio.The highest LIDT film is obtained when annealed at 923 K,owing to the lowest density of defect.     

锚杆支护方式对深埋洞室隔冲击效果影响的数值模拟研究

与浅埋洞室相比,随着埋深增加而产生的高地应力现象使深埋洞室安全性评价更加复杂。本研究在考虑地应力平衡的前提下,采用有限元与无限元相结合的方法,对冲击荷载作用下深埋洞室的锚杆支护方式进行了设计与优化。计算结果表明：在平衡初始地应力之后,Mises应力会随着锚杆长度、疏密程度的增加略有增长。当锚杆长度和疏密程度增至某一特定值时,洞室洞壁的位移和塑性应变将达到最小值,洞室围岩将达到相对安全状态。锚杆间隔布置下,长锚杆数量的增加将提高洞室围岩的安全性。当对洞室拱脚进行重点支护时,整个洞壁的位移均有所减小。     

太赫兹光谱技术在中药大黄炮制品检测中的应用研究

针对中药炮制前后成分变化会影响中药用药疗效的问题,采用四种大黄炮制品为研究对象,利用太赫兹时域光谱系统和化学计量学处理方法获得了中药大黄光谱数据,按照中药大黄炮制品的种类对光谱数据进行了区分。同时,薄层色谱法研究显示大黄在不同炮制方法处理后,其炮制品中基础物质蒽醌和鞣质类化合物含量发生变化,而该实验获得的这四种大黄炮制品太赫兹光谱数据之间的关联性与上述变化规律相吻合。这就说明太赫兹光谱技术对中药炮制品的物质成分是敏感的,此方法可以为中药炮制过程中物质结构变化的研究提供重要参考。     

挖掘知识结构图 占领教学制高点

刚入职的数学教师,教材解读能力往往较弱,在教学设计时,通常以平视的角度进行设计,导致课堂教学目标不够明确、教学重点与难点不清晰.那么,如何弥补这些短板呢?笔者作为新教师中的一员,经过几年的尝试,发现一个快捷而有效的方法,即利用“知识结构图”,占领数学教学制高点.具体地说,需要教师对知识结构图进行深入挖掘,借以了解知识点之间的相互联系以及整个学段的知识结构是如何螺旋上升的,从长远着手,设计有思维张力的课堂教学,最终达到完善学生知识体系的目的.     

光催化剂SnC2O4的合成及其可见光催化活性

以(NH4)2C2O4为沉淀剂,采用直接沉淀法合成了新型光催化剂SnC2O4粉末.通过X射线粉末衍射、扫描电镜、紫外-可见分光光度计及荧光分光光度计等手段对样品的物相结构、微观形貌以及光吸收性能等进行了分析表征.结果表明:所制备的样品为单斜白钨矿型SnC2O4,空间群为C2/C(15).样品的微观形貌为不规则多面体,其禁带宽度为3.44 eV.光致发光光谱表明样品内部可能有大量的氧空位和其它缺陷.以甲基橙为模拟染料废水对SnC2 O4样品的光催化活性进行了评价.当甲基橙染料的浓度为40 mg/L,SnC2 O4光催化剂的投加量为40 mg/50 mL时,在模拟可见光照射下,甲基橙降解率可达99.1;,且光催化降解反应符合一级动力学方程.此外,通过引入活性物种捕获剂证明·O2-在光催化降解甲基橙反应中起重要作用.     

苯乙烯-对叔丁基苯乙烯-间戊二烯三元共聚物制备及表征北大核心CSCD

相对于异戊二烯和丁二烯传统二烯烃,新型间戊二烯单体可以通过阴离子共聚合实现特殊序列结构共聚物,如交替共聚物。本文以间戊二烯、苯乙烯和对叔丁基苯乙烯为共聚单体,通过丁基锂引发聚合合成系列二元及三元共聚物,重点考察了共聚动力学和共聚物的微观结构。实验结果表明:(1)聚合动力学显示共聚合符合经典一级反应特征,共聚单体可以转化完全;(2)核磁氢谱在线分析表明共聚单体等摩尔消耗,核磁氢谱和碳谱证明了二元交替共聚结构;(3)二元及三元共聚均具有明显的活性可控聚合特征,分子量与理论值高度吻合,分子量分布D均小于1.20;(4)示差扫描量热(DSC)结果显示交替共聚物是一类特殊的半结晶聚合物,玻璃化转变温度Tg可以通过调控共聚单体比例微调,Tm在100~120℃范围;(5)基于间戊二烯特殊的二元交替共聚,推测了可能的聚合机理。     

卷烟主流烟气中NNK测量不确定度评定

对气相色谱-热能分析联用法测定卷烟主流烟气总粒相物中NNK含量的测量不确定度进行评定,分析了NNK含量检测的影响因素,计算了不确定度分量及合成不确定度,当NNK含量测定结果为27．4ng／支时,扩展不确定度为2．0ng／支。     

Attack on the Enhanced Multiparty Quantum Secret Sharing

Recently, Gao et al.'s [Commun. Theor. Phys. 52 (2009) 421] multiparty quantum secret sharing (MQSS) protocol with two-photon three-dimensional Bell states was enhanced by Hwang et al. [Commun. Theor. Phys. 56 (2011) 79]. The improved protocol removes some unnecessary unitary operations, devices, and transmissions by the technique of decoy single photons and careful modification. However, in this paper, we investigate the security of the improved protocol and find it is insecure. The eavesdropper can steal all Alice's secret information. Furthermore, a feasible modification to remedy the security loophole is put forward. Our improved protocol provides a basic method to modify a kind of MQSS protocols which cannot resist the collusion attack.     

选区外延生长的PbTe-超导杂化纳米线:一个可能实现拓扑量子计算的新体系

半导体-超导体杂化纳米线是用于研究马约拉纳零能模和拓扑量子计算的主要平台之一,而基于Ⅲ-Ⅴ族半导体InAs和InSb的纳米线则是当前此方向研究的主流材料体系.尽管经过多年制备技术的改进和优化,样品中过多的缺陷和杂质仍是阻碍此方向进一步发展的核心问题.近年来,一个新的马约拉纳纳米线候选体系——Ⅳ-Ⅵ族半导体PbTe-超导杂化纳米线吸引了很大关注并获得了快速的研究进展.PbTe的介电常数巨大,且具有晶格匹配的衬底,这些优势使其有潜力突破纳米线样品质量提升的瓶颈,成为马约拉纳零能模的研究和拓扑量子计算实现的理想平台.本文将简单介绍最近几年在PbTe纳米线和PbTe-超导杂化纳米线器件的选区分子束外延生长、输运性质研究方面取得的重要进展,并对这种新的马约拉纳纳米线候选体系的优势、问题及基于其实现拓扑量子计算的前景进行讨论.     

Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon

Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon （CZ-Si） by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature （RT）, the 1107cm^-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm^-1, 1096cm^-1, and 1182cm^-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.