索伯列夫嵌入不等式的证明

We consider the problem about the space embedded by tile space and the embed-ding inequality. With the Holder inequality and interpolation inequality, we give the proof of the space embedding theorem and the space holder embedding theorem.     

Effect of additional silicon on titanium/4H-SiC contacts properties

The Ti electrode was deposited on the(0001) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property.X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM), and atomic force microscopy(AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.     

回路1、2-弦图的逆M矩阵完备及其算法设计

对已定元均不为零的部分逆M矩阵,通过变换使其对角线上元素均为1后,根据其所对应图形的特点,得到结果如下:(a)若其所对应图形为简单有向回路或回路1-弦图,具有逆M矩阵完备式当且仅当所有简单有向回路的回路积均小于1.(b)若其所对应图形为回路2-弦图,具有逆M矩阵完备式当所有简单有向回路满足回路积小于1,且对其中依次在两个顶点处相交的有向回路标明层次后,任一有向回路的回路积均小于与其相连接的上一层的有向回路的回路积.     

图映射的吸引中心与拓扑熵

设f是图G上的连续自映射，P(f)，AГ(f)，ω(f)，Ω(f)，sα(y，f)分别表示f的周期点集，单侧γ-极限点集，ω-极限集，非游荡集，相对于y的特殊α-极限点集．本文证明了：(1)x∈sα(y，f)(对某个y∈G)当且仅当x∈sα(x，f)(2)AГ(f)∪P(f)包含∪y∈Gsα(y，f)(3)AГ(f)∪P(f)=ω(Ω(f))=ω(ω(f))=ω(∪y∈Gsα(y,f))=ω(∪（AГ(f)∪P(f))．此外，本文还得到了，具有正拓扑熵的几个等价条件。     

非混沌的树映射

设f是树T上的连续自映射,SAP(f),ω(f);Ω(f)分别是f的强几乎周期点集,ω-极限集,非游荡集.本文证明下面几条是等价的:(i)f是非混沌的;(ii)SAP(f)=ω(f);(iii)fΩ(f)是逐点等度连续的;(iv)f│ω(f)是逐点等度连续的;(v)f是一致非混沌的。     

2,6—二甲酸吡啶氮氧化物与稀土硝酸盐配合物的合成及表征

在无水乙醇介质中合成了２，６－二甲酸吡啶氮氧化物（Ｈ２ＰｄＣＯ）和稀土硝酸盐形成的配合物［ＲＥ（ＰｄＣＯ）·ＮＯ３·２Ｈ２Ｏ］（ＲＥ＝Ｌａ－Ｎａ，Ｓｍ，Ｅｕ，Ｔｂ，Ｈｏ，Ｅｒ，Ｙ）。通过元素分析，摩尔电导，红外光谱，紫外光谱，１Ｈ核磁共振谱及热重－差热分析等对该系列配合物进行了表征，并研究了Ｅｕ（Ⅲ），Ｔｂ（Ⅲ）配合物荧光性质。     

CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

The crystalline carbon nitride thin films have been prepared on Si (100) substrates using microwave plasma chemical vapor deposition technique. The experimental X-ray diffraction pattern of the films prepared contain all the strong peaks of α-C₃N₄ and β-C₃N₄, but most of the peaks are overlapped.The films are composed of α-C₃N₄ and β-C₃N₄. The N/C atomic ratio is close to the stoichiometric value 1.33. X-ray photoelectron spectroscopic analysis indicated that the binding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively. The shifts are attributed to the polarization of C-N bond. Both observed Raman and Fourier transform infrared spectra were compared with the theoretical calculations. The results support the existence of C-N covalent bond in α- and β-C₃N₄ mixture.     

激光触发能量对横向结构4H-SiC光导开关导通电阻的影响

采用钒掺杂半绝缘4H-SiC衬底,利用磁控溅射在硅衬底上制备了Ni/Au金属电极,并封装加工成同面型横向电极结构SiC光导开关,研究了不同激光触发能量对光导开关光电响应及导通电阻的影响。用波长532nm的激光作为触发源,当激光触发能量从26.7mJ增加到43.9mJ时,光导开关的导通电阻从295Ω降低到197Ω。利用复合理论推导出激光触发时导带中载流子浓度随时间的变化规律,并利用MATLAB模拟计算了不同触发能量下开关的导通电阻,得到了与实验较一致的结果。在此基础上,提出了降低开关导通电阻的两种途径。     

SUPERSYMMETRIC INVARIANCE AND UNIVERSAL CENTRAL EXTENSIONS OF LIE SUPERTRIPLE SYSTEMS

In this article, we discuss some properties of a supersymmetric invariant bilinear form on Lie supertriple systems. In particular, a supersymmetric invariant bilinear form on Lie supertriple systems can be extended to its standard imbedding Lie superalgebras. Furthermore, we generalize Garland＇s theory of universal central extensions for Lie supertriple systems following the classical one for Lie superalgebras. We solve the problems of lifting automorphisms and lifting derivations.     

非混沌的树映射

设f是树T上的连续自映射,SAP(f),ω(f),Ω(f)分别是f的强几乎周期点集,ω-极限集,非游荡集.本文证明下面几条是等价的(i)f是非混沌的;(ii)SAP(f)=ω(f);(iii)f|Ω(f)是逐点等度连续的;(iv)f|ω(f)是逐点等度连续的;(v)f是一致非混沌的.