无限层铜氧化合物高温超导体研究进展

无限层结构ＡＣｕＯ２（Ａ：碱土金属）化合物是所有铜氧化物高温超导体中结构最简单，而且可能是临界超导转变温度Ｔｃ最高的化合物。它具有一些独特的物理性质。综述了无限层结构化合物的合成、结构及超导电性，并对目前存在的问题及今后研究的方向作了讨论。     

Vapour Recoil Effect on a Vapour Liquid System with a Deformable Interface

A new two-sided model of vapour-liquid layer system with a deformable interface is proposed. In this model, the vapour recoil effect on the Marangoni-Bénard instability of a thin evaporating liquid layer can be examined only when the interface deflexion is considered. The instability of a liquid layer undergoing steady evaporation induced by the coupling of vapour recoil effect and the Marangoni effect is analysed using a linear stability theory. We modify and develop the Chebyshev-Tau method to solve the instability problem of a deformable interface system by introducing a new equation at interface boundary. New instability behaviour of the system has been found and the self-amplification mechanism between the evaporation flux and the interface deflexion is discussed.     

Experimental Studies on Thermal and Electrical Properties of Platinum Nanofilms

We experimentally studied the in-plane thermal and electrical properties of a suspended platinum nanofilm in thickness of 15 nm. The measured results show that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient of the studied nanofilm are much less than those of the bulk material, while the Lorenz number is greater than the bulk value. Comparing with the results reported previously for the platinum nanofilm in thickness of 28 nm, we further find that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient decrease with the decreasing thickness of the nanotilm, while the Lorenz number increases with the decreasing thickness of the nanofilm. These results indicate that strong size effects exist on the in-plane thermal and electrical properties of platinum nanofilms.     

重离子碰撞两体关联输运理论Ⅲ.半经典近似下的数值计算

为了验证由相干单粒子波函数和两体关联动力学所建立的非相对论条件下的重离子碰撞两体关联输运理论的有效性,利用没有碰撞项的量子分子动力学,即时间相关的Hartree-Fock方法的经典近似,实现了两体关联输运理论在半经典近似下的数值计算.计算结果表明:这种两体关联输运理论的确能够有效地描述重离子碰撞过程中的输运和耗散过程.     

十四烷基三甲基溴化铵对膨润土改性合成及其表征

用阳离子表面活性剂十四烷基三甲基溴化铵(C17H38NBr)对膨润土进行插层改性制备.配制浓度为2.35%十四烷基三甲基溴化铵溶液备用.在碘量瓶中称取3.04g膨润土,加入30mL超纯水、10mL十四烷基三甲基溴化铵溶液,制成土浆,放入微波炉中反应1min.产物经抽滤、洗涤、烘干、研磨,做FT-IR和DSC-TG分析.DSC曲线在500℃时有一明显的放热峰;TG曲线显示改性土的失重率有明显的增大.有机改性膨润土中确实含有大量有机物,改性成功.     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。     

分形——它的应用与进展讲座：第三讲 在分形上的反常输运

一、“蚂蚁在迷宫中” 输运(包括扩散、电导、摩擦……)理论是物理、化学、生物等学科中非常关注的课题.非平衡态统计力学给出了一些理论方法,一般称为经典输运理论.这里要讨论的是在无序系统或分形上的输运规律,这些规律与经典理论有很大的区别,它们会带来许多反常的行为[1,2].例如,流体在裂缝或多孔介质中的反常扩散,在玻璃体及大分子中的反常弛豫以及在逾渗集团上的电导等.德然纳曾形象地把这类问题称为“蚂蚁在迷宫中”.为了方便起见,先讨论在分形上的扩散.对于分形我们可以选用有规分形,如谢尔宾斯基镂垫(Sierpinski gasket)、海绵(sp…     

高能物理学发展的回顾和展望

 从电弱统一理论提出到现在已经过去了23年.量子色动力学从诞生到现在也已经历了17年,在这期间CERN建成了E_cm=60GeV的质子对撞机ISR;FNAL和CERN分别建成了能量为500GeV和450GeV的质子同步加速器.     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

氧化锌纳米带中的面缺陷

面缺陷是纳米带中非常普遍和非常重要的一类缺陷.在有些情况下,面缺陷对于高表面能指数面的出现起着决定性的作用, 同时,它们可以诱导纳米带沿着特殊的方向生长.面缺陷可以是孪晶或双晶,层错和由杂质原子聚集在特定原子面所形成的间隙原子层.在本文中,利用透射电子显微术,我们将介绍氧化锌纳米带中被发现的几种面缺陷.我们确认了两种孪晶/双晶结构,它们的孪晶面分别是(0113)和(2112)面.基面层错有I1 和I2两种.在大尺寸的纳米带中,I1基面层错可以折叠到(2110)面形成棱面层错.当少量的In离子掺入氧化锌纳米带后,我们发现伴随着杂质In在基面的聚集,形成了两种倒反畴界.