纳米TiO_2用于甲基橙溶液的光催化氧化研究

本实验采用纳米级的二氧化钛,对甲基橙溶液进行了紫外光催化氧化处理,探讨了pH的影响和添加Fe3+的效果及反应动力学方程,结果表明,采用UV/O3/TiO2工艺对其进行处理,pH4-5时,10W紫外灯光照60min,CODcr去除率达84%,脱色率达96%以上。添加Fe3+,对溶液的催化降解速度提高不明显。动力学研究表明,CODcr降解速度对CODcr的浓度为一级反应。     

相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.     

CdSe和ZnO量子点的拉曼光谱研究

本文介绍了用拉曼光谱研究CdSe和ZnO两种Ⅱ Ⅳ族量子点材料的结果,对拉曼峰进行了指认。观察到的光学声子峰位的移动被认为是由量子限制效应引起。     

Singlet-Triplet Transition in Quantum Dots Confined by Triangular and Bowl-Like Potentials： the Effect of Electric Fields

We theoretically investigate the energy spectra of two-electron two-dimensional （2e 2D） quantum dots （QDs） confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of an in-plane electric field on the singlettriplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We find that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

红外／雷达双传感器融合目标跟踪算法

实现雷达和红外融合跟踪的基本思路是：首先提取红外成像的目标质心并将其转换到惯性坐标系：然后用最小二乘规则对红外传感器的冗余角度数据进行压缩，以产生在时间上和雷达测量对准的伪角度测量：再通过加权平均的方法分别与雷达的方位角和俯仰角测量进行融合处理，以得到同步数据融合估计。采用了由拉格朗日算法所求得的约束极值作为权系数，使用扩展的卡尔曼滤波方法设计跟踪滤波器，将基于雷达和红外融合得到的数据用于更新滤波器的目标状态。     

高纯度烟草过氧化物酶(TOPⅠ)光谱特性研究

采用交换吸附脱色及柱层析新技术,成功地从烟叶中分离和纯化了一种烟草过氧化物酶同工酶(TOPⅠ),并对其进行了一系列光谱特性研究.基质辅助激光解吸电离飞行时间质谱(MALDI-TOF-MS)测得TOPⅠ分子量为21 888.5,等电点pI为3.5;氨基酸组成分析表明TOPⅠ为一含血红素的酸性蛋白酶.光谱学分析揭示,在402 nm处有一典型的Soret带,在498和636 nm处有特征吸收峰(α,β带),酸度和变性剂对TOPI在紫外可见区的特征吸收峰均产生一定的影响,TOP Ⅰ的荧光光谱测定结果说明TOPⅠ分子中含有Trp残基和Tyr残基以及其自身的独特的光谱学特性.     

氢原子光谱实验研究

氢原子的结构简单，其光谱具有明显的规律，各种原子光谱线规律性的研究首先是在氢原子上得到突破。通过测量氢光谱可见谱线的波长，能较准确测定氢的里德伯常数，可使学生对近代物理测量有初步了解。     

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

We propose a novel coupled quantum well structure, i.e. a quasi-symmetric coupled quantum well (QSCQW). Based on the demands of optical switching devices for quantum well materials, the QSCQW configuration is further optimized. Consequently, in the case of low applied electric field 25kV/cm and low absorption loss 100cm^-1, a large field-induced refractive index change (for TE mode, n = 0.0106; for TM mode, n = 0.0115) is obtained in the QSCQW structure at the operation wavelength 1550hm. The value is in one or two order of magnitude larger than that in a rectangular quantum well and about 50% larger than that of five-step asymmetric coupled quantum well structure under the same working conditions. The refractive index change obtained with the optimized QSCQW under so low absorption loss and applied electric field is very attractive for semiconductor optical switching devices. This manifests that the QSCQW structure has a great potential for applications in ultra-fast and low-voltage optical switches and in travelling wave modulators.