CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

First-principles study of the co-effect of carbon doping and oxygen vacancies in ZnO photocatalyst

Although tuning band structure of optoelectronic semiconductor-based materials by means of doping single defect is an important approach for potential photocatalysis application,C-doping or oxygen vacancy(Vo)as a single defect in ZnO still has limitations for photocatalytic activity.Meanwhile,the influence of co-existence of various defects in ZnO still lacks sufficient studies.Therefore,we investigate the photocatalytic properties of ZnOx C0.0625(x=0.9375,0.875,0.8125),confirming that the co-effect of various defects has a greater enhancement for photocatalytic activity driven by visible-light than the single defect in ZnO.To clarify the underlying mechanism of co-existence of various defects in ZnO,we perform systematically the electronic properties calculations using density functional theory.It is found that the coeffect of C-doping and Vo in ZnO can achieve a more controllable band gap than doping solely in ZnO.Moreover,the impact of the effective masses of ZnO_xC_0.0625(x=0.9375,0.875,0.8125)is also taken into account.In comparison with heavy Vo concentrations,the light Vo concentration(x=0.875)as the optimal component together with C-doping in ZnO,can significantly improve the visible-light absorption and benefit photocatalytic activity.     

高亲和力抗eGFP纳米抗体的筛选与应用

将增强型绿色荧光蛋白（Enhanced Green Fluorescent Protein, eGFP）免疫羊驼后构建纳米抗体免疫库,固相淘选eGFP纳米抗体;构建E.coli Rosetta表达载体,诱导表达纳米抗体,并鉴定其结合活性及特异性;辣根过氧化物酶（Horseradish peroxidase, HRP）标纳米抗体,确定其工作浓度及稳定性;将纳米抗体与纳米磁珠偶联应用于免疫沉淀B13-EGFP融合蛋白。四免后抗血清滴度超过1.28×106,获得库容量为1.85×108 cfu的抗eGFP纳米抗体噬菌体展示文库;原核表达10种独特基因序列的纳米抗体,均为可溶性表达;采用ForteBio Octet确定出纳米抗体4-28与eGFP的亲和常数（KD）最高,达到9.67×10-11M;纳米抗体4-28与eGFP、绿色荧光蛋白（Green Fluorescent Protein, GFP）特异性结合;HRP标记纳米抗体4-28检测范围是1:10 000～1:25 000(浓度100～40 ng·mL-1),比市场上现有的检测二抗（稀释范围1:5 000～1:20 000）灵敏度更高;纳米抗体4-28偶联羧基化纳米磁珠,免疫沉淀B13-eGFP融合蛋白,实现了简单快速分离目的蛋白B13-eGFP。     

广义神经传播方程的整体吸引子

使用Galerkin方法,结合Sobolev空间理论和不等式技巧,给出了广义神经传播方程解的存在唯一性定理,然后利用吸引子存在性定理,采用半群方法证明了方程整体吸引子的存在性.     

分数阶热弹理论下重力场对二维纤维增强介质的影响

基于Sherief等提出的分数阶广义热弹性耦合理论，研究了在热冲击作用下二维纤维增强弹性体的热弹性问题.考虑了重力对二维纤维增强线性热弹性各向同性介质的影响，建立了控制方程.运用正则模态法，经过数值计算，对控制方程进行求解，得到了不同分数阶参数和不同重力场下无量纲温度、位移和应力分量的表达式，以图形的方式展示了变量的分布规律并对结果展开了讨论.研究结果为:重力场和分数阶参数对纤维增强介质的位移及应力有着重要的影响，但对温度的影响有限.     

ON GENERALIZED COMPLETE(p,q)-ELLIPTIC INTEGRALS

In this paper,we study the generalized complete(p,q)-elliptic integrals of the first and second kind as an application of generalized trigonometric functions with two parameters,and establish the monotonicity,generalized convexity and concavity of these functions.In particular,some Turán type inequalities are given.Finally,we also show some new series representations of these functions by applying Alzer and Richard's methods.     

硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。     

基于并行反向注意网络的跑道线检测

针对无人机远距离跑道线检测时有效信息少且定位困难的问题，提出了一种基于并行反向注意网络的跑道线检测方法。并行反向注意网络采用Res2Net作为主干网络，首先采用并行融合编码器将低级特征与高级特征融合从而获取跑道线的初始轮廓图。在此基础上，融合通道特征金字塔和轴向反向注意力机制来增强图像中的全局和局部特征信息的表达能力。基于无人机着陆图像数据集的仿真试验结果表明所提出的算法有效地检测出跑道线，图像语义分割平均交并比达到86.3%，单帧处理时间25 ms，对于远距离小目标检测有明显的优势。     

介观电路中量子纠缠的经典对应

从量子力学诞生日起,它的经典对应(或类比)一直是物理学家关心的话题.本文以介观电路量子化的框架中,带有互感的两个介观电容-电感(LC)电路为例,首次讨论了量子纠缠的经典类比(或对应)问题.先用有序算符内的积分理论证明其互感是产生量子纠缠的源头;再推导出求解特征频率的公式,就发现它与一个经典系统的小振动频率的表达式有相似之处,该经典系统组成如下:两个墙壁各连一个相同的弹簧,两个弹簧之间接着一个滑动小车可以在光滑的桌面上运动,小车挂有一根单摆.用分析力学求此系统的小振动频率,发现与上述介观电路的特征频率形式类似,单摆的摆动会造成小车来回振动,摆、小车和弹簧的互相牵制效应反映了小车和摆的"纠缠".