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First-principles study of the co-effect of carbon doping and oxygen vacancies in ZnO photocatalyst
作者姓名:史佳  王蕾  顾强
作者单位:Department of Physics
基金项目:Project supported by the National Natural Science Foundation of China(Grant No.11874038);the State Key Laboratory of Advanced Metallurgy Foundation in China(Grant No.KF19-03)。
摘    要:Although tuning band structure of optoelectronic semiconductor-based materials by means of doping single defect is an important approach for potential photocatalysis application,C-doping or oxygen vacancy(Vo)as a single defect in ZnO still has limitations for photocatalytic activity.Meanwhile,the influence of co-existence of various defects in ZnO still lacks sufficient studies.Therefore,we investigate the photocatalytic properties of ZnOx C0.0625(x=0.9375,0.875,0.8125),confirming that the co-effect of various defects has a greater enhancement for photocatalytic activity driven by visible-light than the single defect in ZnO.To clarify the underlying mechanism of co-existence of various defects in ZnO,we perform systematically the electronic properties calculations using density functional theory.It is found that the coeffect of C-doping and Vo in ZnO can achieve a more controllable band gap than doping solely in ZnO.Moreover,the impact of the effective masses of ZnOxC0.0625(x=0.9375,0.875,0.8125)is also taken into account.In comparison with heavy Vo concentrations,the light Vo concentration(x=0.875)as the optimal component together with C-doping in ZnO,can significantly improve the visible-light absorption and benefit photocatalytic activity.

关 键 词:first-principles  theory  electron  density  of  states  and  band  structure  of  crystalline  solids  Ⅲ-ⅤandⅡ-Ⅵsemiconductors

First-principles study of the co-effect of carbon doping and oxygen vacancies in ZnO photocatalyst
Jia Shi,Lei Wang,Qiang Gu.First-principles study of the co-effect of carbon doping and oxygen vacancies in ZnO photocatalyst[J].Chinese Physics B,2021(2).
Authors:Jia Shi  Lei Wang  Qiang Gu
Institution:(Department of Physics,University of Science and Technology Beijing,Beijing 100083,China)
Abstract:Although tuning band structure of optoelectronic semiconductor-based materials by means of doping single defect is an important approach for potential photocatalysis application, C-doping or oxygen vacancy(Vo) as a single defect in ZnO still has limitations for photocatalytic activity. Meanwhile, the influence of co-existence of various defects in ZnO still lacks sufficient studies. Therefore, we investigate the photocatalytic properties of ZnO_x C0.0625(x = 0.9375, 0.875,0.8125), confirming that the co-effect of various defects has a greater enhancement for photocatalytic activity driven by visible-light than the single defect in ZnO. To clarify the underlying mechanism of co-existence of various defects in ZnO,we perform systematically the electronic properties calculations using density functional theory. It is found that the coeffect of C-doping and Vo in ZnO can achieve a more controllable band gap than doping solely in ZnO. Moreover, the impact of the effective masses of ZnOx C0.0625(x = 0.9375, 0.875, 0.8125) is also taken into account. In comparison with heavy Vo concentrations, the light Vo concentration(x = 0.875) as the optimal component together with C-doping in ZnO,can significantly improve the visible-light absorption and benefit photocatalytic activity.
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