金刚石膜探测器研制

采用直流电弧等离子喷射(DC arc plasma jet)CVD(chemical vapour deposition)工艺制成的金刚石薄膜，研制成功MSM(metal-semiconductor-metal)型CVD金刚石脉冲辐射探测器.对制作的金刚石薄膜材料及探测器有关性能进行了测量，结果表明，采用Raman shift<4.5cm^-1的金刚石薄膜制成的探测器，可满足亚纳秒脉冲辐射探测的要求.由于其独特的物理性能，在制作成本合理的情况下，在脉冲辐射测量中可取代Si-PIN探测器. 关键词： CVD 金刚石薄膜 辐射探测器     

A CVD diamond film detector for pulsed proton detection

A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.     

高空核爆炸瞬发辐射电离效应的数值模拟

采用蒙特卡罗方法模拟了高空核爆炸瞬发辐射中子、γ射线、X射线电离大气的过程,给出了几种爆炸场景下瞬发辐射产生的附加电离电子密度空间分布.针对大气密度随高度非均匀连续变化的特性,采用质量距离抽样方法取代常用的步长抽样方法,无需根据大气密度随高度的变化进行分层处理,提高了计算效率.结果表明:对于不同的爆高,瞬发辐射电离分布存在显著的差异;随着爆高的增加,瞬发辐射附加电离区范围增大,但电子密度的峰值减小. 关键词： 高空核爆炸 瞬发辐射 大气电离 蒙特卡罗方法     

静态单粒子翻转截面的获取及分类

 为了评估静态随机访问存储器(SRAM)型现场可编程门阵列(FPGA)器件的单粒子效应,寻求单粒子翻转敏感部位,以XCV300PQ240为实验样品,利用重离子辐照装置详细测试了该器件的静态翻转截面,并根据配置存储单元用途的不同,对翻转数据进行了分类。结果表明：SRAM型FPGA的内部存储单元对单粒子翻转效应十分敏感;配置存储器翻转主要由查找表(LUT)及互连线资控制位造成,这两者的翻转占总翻转数的97.46%;配置存储器中各类资源的单粒子翻转(SEU)敏感性并不一致,输入输出端口(IOB)控制位和LUT的单粒子翻转的敏感性远高于其它几类资源,但LUT在配置存储器中占有很大比例,在加固时应予以重点考虑。     

Design of a 1.2 GSPS single-channel real-time long-distance transmission sampling system for fast-transient signal

This article has introduced the origin and speciality of fast-transient signal, and told the meaning of researching on fast-transient signal. The main troubles of sampling on fast-transient signal is its `fast' and `transient', and the experiment's bad condition also troubles the transmission of information. To solve those troubles we put forward a technology called `digital Forward-sampling', and designs a sampling system for the fast-transient signal with this technology. The sampling rate of this system is 1.2 GSPS; it could get the whole pulse of fast-transient signal through the digital Forward-sampling technology; this system also could transmit the result to the analyzing equipment kilometers away immediately, before the data was destroyed by the electromagnetic and     

共振价键波函数在高压液氢量子蒙卡模拟中的适用性研究

在共振价键理论基础上, 选取高压液氢电子主要占据轨道的线性组合作为基组, 构建由Jastrow项和反对称孪生函数乘积项 (AGP) 组成的波函数. 考虑电子关联作用的共振价键 (RVB) 波函数得出的能量值低于LDA能量值; 当满足r_s<1.75或T >15000 K时引入backflow项以改善波函数结点面, 改善后的能量值下降约1 mHa/atom, 能量方差值变小. 将构建的RVB波函数与电子-离子耦合的蒙特卡罗法 (CEIMC) 相结合, 计算结果与实验及其他ab-initio结果相符合, 获得的液氘单次冲击Hugoniot曲线基本通过所有加载类型实验误差棒, 液氘在50.3 GPa处具有最大压缩率4.48, 在100–120 GPa内未发现压缩率有急剧增大的现象. 构建的RVB 波函数能够适用于较宽密度与温度范围内(1.0< r_s<2.2, 2800 K< T<60000 K)液氢的模拟, 与CEIMC法相结合可提高液氢冲击特性的模拟精度. 关键词： 共振价键理论 波函数 量子蒙卡法 液氢     

基于库仑定律的二极管空间电荷限制效应研究

真空二极管是电子束源装置中的一个关键部件, 其阴极发射的电子束进入二极管阴阳极间隙区会产生很强的空间电荷限制效应. 本文针对平板真空二极管中的空间电荷限制效应物理模型, 从库仑定律的积分形式出发, 选取了不同参数的阴极半径与阴阳极间隙距离之比, 计算得到了真空二极管阴阳极间隙区的电场分布情况, 从而避免了采用Poisson方程求解时需要处理复杂的非线性偏微分方程这一问题. 结果表明, 基于库仑定律的计算结果与从Child-Langmuir定律分析得到的结果仅相差一个与二 极管极板边界条件有关的修正量. 当二极管阴极半径与阴阳极间隙距离之比 R/D>10时,一维空间电荷限制定律将是一个较好的近似结果,当 R/D较小时, 用该定律计算误差较大,在实际物理问题中需要谨慎使用.     

Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller

This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20,which is a 16-bit high performance member of the MCS96 microcontroller family.The electrical and functional tests were made in three irradiation environments:neutron,gamma rays,combined irradiation of neutron and gamma rays.The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour.Compared with the single radiation environment,the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation.This phenomenon may cause a significant hardness assurance problem.     

Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller

This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments: neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.     

基于SVM回归的圆柱壳体抗脉冲强度预估模型

在小子样结构响应试验数据样本的基础上,利用支持向量机回归的方法模拟了圆柱壳体动态极限应变峰值同壳体几何尺寸和外加脉冲载荷大小的非线性函数关系,同时通过改进的模拟退火单纯形混合算法优化了支持向量机的性能参数,并将支持向量机回归分析的预测性能同BP人工神经网络方法做了比较,验证了具有优化性能参数组合的支持向量机在小样本条件下更好的预测和推广能力. 最后,从支持向量机回归模型导出了大尺寸圆柱壳体抗脉冲载荷的强度极限同自身几何尺寸的多元函数关系,从而为该类型壳体设备抗脉冲载荷的强度分析提供了一个可借鉴的预估模型. 研究结果表明了支持向量机在机械结构的强度预估和可靠性分析等力学领域具有广泛的应用前景.