中子单粒子效应研究现状及进展

回顾了中子单粒子研究的国内外发展情况,介绍了近几年西北核技术研究所在西安脉冲堆开展的低能中子单粒子效应研究进展。比较了稳态与脉冲工况下中子单粒子效应的异同性;分析了含有SRAM结构器件随着特征尺寸的减小,中子单粒子效应敏感性加剧的物理机制。分析认为目前中子单粒子效应已成为小尺寸大规模互补金属氧化物半导体器件的主要中子效应表现;中子辐射效应研究中,除了位移损伤效应以外还必需重视由中子电离造成的中子单粒子效应。     

First principles simulation technique for characterizing single event effects

This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.     

敏化LiF(Mg,Ti)热释光剂量片γ射线响应特性

敏化LiF(Mg, Ti)热释光剂量片（LiF(Mg, Ti)-M TLD）是用于强脉冲辐射场剂量测量的主要探测器。对国内4个厂家生产的敏化LiF(Mg, Ti)热释光剂量片进行了射线响应的一致性、重复性和线性的比较研究, 测量了射线辐照后4种敏化LiF(Mg, Ti)热释光剂量片试验样品的吸收剂量读数平均值及标准偏差, 比较了4种样品在不同吸收剂量下的灵敏度及其变异系数, 并获得了超出线性上限的大剂量辐照对剂量片线性响应特性的影响规律。研究结果表明, 北京防化研究院生产的剂量片性能最优, 试验样品在吸收剂量为6 Gy(Si)时读数变异系数为3.11%, 重复性指标在5%以内, 线性响应上限在50~100 Gy(Si)之间。吸收剂量为150 Gy(Si)并退火后再次使用时的灵敏度漂移幅度约为11%。     

随机静态存储器低能中子单粒子翻转效应

 建立了中子单粒子翻转可视化分析方法,对不同特征尺寸（0.13~1.50 μm）CMOS工艺商用随机静态存储器(SRAM)器件开展了反应堆中子单粒子翻转效应的实验研究,获得了SRAM器件的裂变谱中子单粒子翻转截面随特征尺寸变化的变化趋势。研究结果表明:SRAM器件的特征尺寸越小,其对低能中子导致的单粒子翻转的敏感性越高。     

强脉冲超硬Ｘ射线产生技术研究

 分析了利用强流脉冲电子束轫致辐射产生强脉冲超硬X射线的几种主要技术途径的特点，以及提高超硬X射线产额的方法；利用MCNP软件计算了电子能量在0.4～1.4 MeV范围内，超硬X射线产生效率与钽辐射转换靶厚度的关系曲线；介绍了在“强光一号”加速器上开展产生强脉冲超硬X射线实验方法与实验结果，获得了3种强脉冲超硬X射线：脉冲宽度约35 ns，输出窗面积约50 cm²，能量密度为5～7 J/cm²；脉冲宽度约35 ns，输出窗面积约50 cm²，能量密度为12 J/cm²；脉冲宽度约35 ns，输出窗面积约500 cm²，能量密度为1 J/cm²。     

样本空间排序法评价瞬时辐照无失效数据研究

为降低瞬时辐照抽样检验中现行经典非参数法的评价结果的保守性,引入样本空间排序法,从理论和实例两方面计算无失效数据的生存概率置信下限,并与经典非参数法进行对比。结果是,样本空间排序法不仅提高生存概率的置信下限,还增大这些置信限所对应的剂量率范围。该研究结果表明样本空间排序法提高了数据利用率,降低了保守性,可减少试验成本。     

三角问题常见错解剖析

思维的严密性和深刻性是良好思维品质的基本特征 ,也是高考对学生思维能力的基本要求 .三角函数一单元中由于缺乏思维的严密性和深刻性而使问题错解的例子比比皆是 .本文拟举以下几种错解情形 ,并对此进行剖析、纠正 ,目的是引起同学们深入思考 ,周密考虑 ,以纠正和预防三角解题中的类似错误 .1　忽视三角函数的定义域而致错例 1　求函数 ｆ(ｘ) =ｓｉｎｘ +ｓｉｎ3ｘｃｏｓｘ +ｃｏｓ3ｘ的最小正周期 .错解 :∵ ｆ(ｘ) =ｓｉｎｘ +ｓｉｎ3ｘｃｏｓｘ +ｃｏｓ3ｘ=2ｓｉｎ2ｘｃｏｓｘ2ｃｏｓ2ｘｃｏｓｘ=ｔｇ2ｘ ,∴周期Ｔ =π2 .剖析　注意…     

Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller

This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20,which is a 16-bit high performance member of the MCS96 microcontroller family.The electrical and functional tests were made in three irradiation environments:neutron,gamma rays,combined irradiation of neutron and gamma rays.The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour.Compared with the single radiation environment,the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation.This phenomenon may cause a significant hardness assurance problem.     

Synergistic effects of neutron and gamma ray irradiation of commercial CHMOS microcontroller

This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments: neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.     

基区表面势对栅控横向PNP晶体管中子位移损伤的影响

通过在常规横向PNP晶体管基区表面氧化层上淀积栅电极,制作了可以利用栅极偏置调制基区表面势的栅控横向PNP晶体管。对无栅极偏置电压和偏置电压分别为-10V和10V的栅控横向PNP晶体管,在西安脉冲反应堆上开展注量为2×1012,4×1012,6×1012,8×1012,1×1013 cm-2的中子辐照实验,研究基区表面势的增加和降低对栅控横向PNP晶体管中子位移损伤退化特性的影响。研究结果表明,基区表面势的增加引起栅控横向PNP晶体管共射极电流增益倒数的变化量随辐照中子注量的退化速率增加,基区表面势的降低对位移损伤退化速率无明显影响。