由光学表面上吸附分子的二次谐波研究DASPI和PIC分子的取向

利用波长λ=1.06μm的线偏振激光光束,作用到熔石英或玻璃光学表面的DASPI[2-(p-dimethyl-aminostryryl)-pyridyethyliodide]和PIC(N,N＇-diethyl-pseudoisccyanine chloride)吸附分子膜上,在一定条件下可观察到二次谐波的产生.通过调整基波激光的线偏振方向和旋转样品基板,实验上我们确定这两种分子的轴线(偶极矩)取向与基板表面相垂直.在溶液中,激光染料分子或其它有机分子轴线是随机取向的.但如果分子被吸附在光学或金属表面上时,由于存在着范德瓦尔斯力,氢键和金属离子在羧基间的束缚力,使被吸附的分子在基板表面上有序的按一定的取向排列.对分子膜结构的研究目前已相当广泛.一般实验上采用X射线和电子衍射法研究分子的排列方式、间隔和轴向电子密度,而利用红外光谱和电子顺磁共振方法给出吸附分子的取向及原子间相互位置等参数.我们利用激光在吸附分子膜层上引起的二次谐波,给出染料DASPI分子和有机PIC分子的轴线(偶极矩方向)在熔石英和K_9玻璃基板表面上的取向.     

Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma

Deep InP gratings are etched by C12/CH4/Ar inductively coupled plasma （ICP） at room temperature. A comparison is made between SiNz mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of C12/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10：1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback A1GMnAs-InP laser.     

Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature

We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using C12/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between C12 and Ctt4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855nm/min, and the selectivity ratio overSi02 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.     

Investigation of External Optical Feedback Resistance of IC—DFB and GC—DFB Lasers Using a Very Simple Experimental set—up

We study the external optical feedback resistance of both index-coupled(IC) and gain-coupled distributed feed-back(DFB) lasers using a very simple experimental set-up.Though IC-DFB lasers with large coupling coefficients are found to be less sensitive to external reflection,they suffer from mode instability at high injection level.On the other hand ,the introduction of gain-coupling mechanism can significantly improve both the immunity of external optical feedback and the single mode yield of the device.     

一种新的测定一维同核全相关的NMR技术

提出一种新的基于MDY混合脉冲的可测定一维同核全相关的核磁共振技术.称为一维自旋回波MDY相干转移(lD-SEMDY)实验.结果表明.它具有下列突出优点:一是不用Z-滤波技术就可以得到纯吸收型的一维全相关谱(lD-TOCSY).与同类技术相比,操作简便.可节省测定时间.应用范围较广;二是所测定亚谱中的信号归属通过改变混合时间和延迟时间可以得到确定;三是相干转移非常有效.远程磁化转移信号的灵敏度比较高,对弱偶合的自旋体系也可进行测定.以甙类化合物为例讨论了它在谱峰高度重叠的有机结构测定中的应用.     

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors

SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

基于X射线衍射的GaN薄膜厚度的精确测量

结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. 关键词： GaN薄膜 厚度测量 X射线衍射     

非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N₂比例的关系.研究发现,随着载气中N₂比例的增加,GaN薄膜方块电阻急剧增加.当载气中N₂比例为50%时,GaN薄膜方块电阻达1.1×10⁸Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N₂比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N₂比 关键词： 半绝缘GaN薄膜 载气 金属有机气相外延 位错     

含己烷雌酚的聚磷酸酯的合成及其抗肿瘤活性研究

合成了３种主链含己烷雌酚的生物可降解的聚磷酸酯，结构经ＩＲ，＾１ＨＮＭＲ和元素分析鉴定，通过水接触角的测定研究了聚合物的亲水－疏水性能，以ｐＨ值变化表征了聚合物的体外水解速率。初步的体外实验表明，此类聚磷酸酯具有较好的体外抗艾氏腹水癌活性。