Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors |
| |
| Authors: | Ren Fan Hao Zhi-Biao Wang Lei Wang Lai Li Hong-Tao and Luo Yi |
| |
| Institution: | Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China;State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua U |
| |
| Abstract: | SiN_x is commonly used as a passivation material for
AlGaN/GaN high electron mobility transistors (HEMTs). In this paper,
the effects of SiN_x passivation film on both two-dimensional
electron gas characteristics and current collapse of AlGaN/GaN HEMTs
are investigated. The SiN_x films are deposited by high- and
low-frequency plasma-enhanced chemical vapour deposition, and they
display different strains on the AlGaN/GaN heterostructure, which
can explain the experiment results. |
| |
| Keywords: | SiNx passivation plasma-enhanced chemical vapour
deposition AlGaN/GaN heterostructure current collapse |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
