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Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors |
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| Authors: | Ren Fan Hao Zhi-Biao Wang Lei Wang Lai Li Hong-Tao and Luo Yi |
| Institution: | Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
| Abstract: | SiNx passivation, plasma-enhanced chemical vapour deposition, A1GaN/GaN het- erostructure, current collapse |
| Keywords: | SiNx passivation plasma-enhanced chemical vapour deposition A1GaN/GaN het- erostructure current collapse |
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