非相干背景光辐照对LiNbO_3∶Fe与LiNbO_3∶Fe∶In晶体中二波耦合的控制

理论分析和实验观测了非相干背景光辐照下掺杂LiNbO3晶体中的二波耦合 ,发现非相干背景光能够在很大范围内灵活有效地控制信号光增益 ,抑制扇形效应 ,提高信噪比 ,缩短光栅的建立时间 .入射光光强比一定时 ,适当地增大背景光光强可以使光栅响应时间减小一个数量级 .尤其对于抽运光光强远大于信号光光强的情况下 ,上述作用更为明显 .     

酰胺型配体的镍(Ⅱ)和锌(Ⅱ)配合物的合成、晶体结构及荧光性质

合成并通过单晶衍射表征了配合物[M(nbqa)(NO3)(H2O)2]NO3(M=Ni,1;Zn,2;nbqa=N-苄基-2-(8-喹啉氧基)乙酰胺)。在配合物1和2中,金属离子采取扭曲的八面体配位构型。来自配体nbqa的1个氧原子和2个氮原子,来自硝酸根的1个氧原子及来自2个配位水分子的氧原子和中心金属离子配位。乙腈溶液中配合物2在430 nm有强荧光发射。     

高磁电阻磁性隧道结的几种微制备方法研究

利用金属掩模法优化了制备磁性隧道结的实验和工艺条件，金属掩模的狭缝宽度为100 μm. 采用4 nm厚的Co₇₅Fe₂₅为铁磁电极和10或08 nm厚的铝氧化物 为势垒膜， 直接制备出了室温隧穿磁电阻（TMR）为30%—48％的磁性隧道结，其结构为Ta(5 nm)/Cu(25 nm)/Ni₇₉Fe₂₁(5 nm)/Ir₂₂Mn₇₈(10 nm)/ Co₇₅Fe₂₅ (4 nm)/Al(08 nm)-O/Co₇₅Fe₂₅(4 nm)/Ni₇₉Fe ₂₁(20 nm)/Ta(5 nm).同时，利用刻槽打孔法和去胶掀离法两种光刻技术并结合Ar离子束刻蚀及化学反应刻 蚀，制备出面积在4 μm×8 μm—20 μm×40 μm、具有室温高TMR和低电阻的高质量磁性 隧道结.300 ℃ 退火前后其室温TMR可分别达到22% 和50%.研究结果表明，采用光刻中的刻 槽打孔或去胶掀离工艺方法制备的小尺寸磁性隧道结，可用于研制磁动态随机存储器和磁读 出头及其他传感器件的磁敏单元. 关键词： 磁性隧道结 隧穿磁电阻 金属掩模法 光刻法     

273.15K时LiCl-Li2SO4-H2O体系热力学性质的等压研究

0℃下用改进的等压设备和改进的实验方法测定了纯水溶液(LiCl 0.5～9.2mol·kg-1,Li2SO40.3～2.5mol·kg-1)以及混合水溶液(离子强度0.5～9.5mol·kg-1)的水活度和渗透系数.该体系的等水活度线与Zdanovskii规则非理想混合溶液表达式的标准偏差为0.0088,当Li2SO4溶液达到饱和后,用Zdanovskii规则扩展式计算,标准偏差为0.0027.根据Pitzer离子相互作用模型对实验数据进行了理论分析,用本文和不同来源的文献数据拟合求取了0℃下该体系的Pitzer纯盐参数和混合参数,计算值与实验值相吻合.     

具有类白钨矿结构的KGd(MoO_4)_2的晶体结构和能带结构(英文)

以Gd2O3、K2CO3、MoO3为原料,采用高温熔盐法,合成了一个含钾的稀土钼酸盐KGd(MoO4)2。通过X射线单晶衍射法测定了它在室温下的晶体结构,并测定了它的光学性质。结构分析表明它属于三斜晶系,空间群为P1,a=0.529 23(6)nm,b=0.692 10(6)nm,c=1.068 89(7)nm,α=75.79(8)°,β=76.79(5)°,γ=67.60(4)°,Z=2,R1(all data)=0.025 8。结构中的K和Gd原子位于各自的晶体学位置,不存在调制结构的现象。此外,我们用得到的晶体学数据,通过密度泛函理论研究了化合物的能带结构、态密度、介电常数,其结果和实验数据相吻合。     

A Zeolitic rho-type Chiral Metal-organic Framework Based on L-alanine

One new chiral zeolitic rho-type metal-organic framework [Cd(L-ala)2]n(1) has been successfully synthesized based on L-alanine chiral ligand, which demonstrates the feasibility of fabricating MOF that integrates the 4-connected zeotype topology by the employment of L-alanine. To the best of knowledge, it's the first report that metal-organic framework based on amino acid features the chiral zeolitic rho-type structure. Compound 1 was characterized by X-ray powder diffraction, elemental analysis and single-crystal X-ray diffraction. Crystal data: C_6 H_9 CdN_2 O_4, Mr = 285.55, cubic system, space group I432, a = 24.0795(6), V = 13961.9(10) ?~3, Z = 48, Dc = 1.630 Mg/m~3, F(000) = 6672, μ(Mo Kα) = 1.865 mm~(-1), S = 1.058, R = 0.0271 and wR = 0.0312 for 1870 observed reflections with I 2σ(I). The circular dichroism(CD) property of compound 1 was also investigated.     

c向切割LiNbO3∶Fe晶体中光折变光散射

提出了一个新的理论机理:c向切割LiNbO₃∶Fe晶体中光折变背向光散射是由光生伏特电流的不均匀性引起的,并经过理论计算,比较成功的解释了实验观察到的各种现象 关键词： 光折变 散射 光生伏特     

Energy Transfer and Green Emitting Properties of Solid Solution PbGd_(1-x)Tb_xB_7O_(13)(x = 0～1)

A series of Tb-doped solid solutions PbGd_(1-x)Tb_xB_7O_(13)(x = 0~1) were synthesized by high-temperature solid state reaction method. The luminescence properties were investigated under UV(274 nm) and near-UV(372 nm) excitation. The emission spectrum by 274 nm exciting reveals a charge-transfer between Gd~(3+) and Tb~(3+) ions. Under near-UV light(372 nm) excitation, PbGd_(1-x)Tb_xB_7O_(13):x Tb~(~(3+)) exhibits intense green emission centered at 543 nm due to the ~5D_4→~7F_5 transition of Tb~(3+) activator. The optimum doping concentrations were found to be x = 0.8 with the quantum efficiency of 35%. One may expect that PbGd_(1-x)Tb_xB_7O_(13) has the potential to be used as a green phosphor activated by near near-UV light.     

Effect of Barrier Width on Bias-Dependent Tunnelling in Ferromagnetic Junctions

We present a finite temperature theory for bias-dependent tunnelling in ferromagnetic tunnelling junctions. The effects of the barrier width d on the tunnelling magnetoresistance (TMR) and its sign change behaviour are discussed with this theory. Numerical results show that both the zero-bias TMR and the critical voltage Vc at which the TMR changes its sign decrease with the increasing barrier width for a considerably thick barrier junction. Furthermore, it is found that a minimum exists in the curve of Vc versus d if a composite junction is under oxidized.