三维传输子量子比特制备研究

研究了三维传输子(3D-transmon)量子比特的制备技术。采用电子束光刻技术制备亚微米双层胶悬空掩模,电子束斜蒸发技术制备Al/AlO_x/Al超导隧道结。将隧道结与三维谐振腔耦合,成功实现3D-transmon。在20 mK下测试了量子比特的能级跃迁频率、拉比振荡、能量弛豫时间t_1等性能,t_1约566 ns。t_1较短的原因是量子比特跃迁频率与三维谐振腔频率接近,耦合过紧。     

Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies

Niobium is sputtered onto a single crystalline silicon substrate in N2：Ar=4：1 gas mixture at the total pressure of 2 Pa. The temperature coefficient of resistance of the sample is about 0.5% at 30OK, and up to 7% at 77K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2 μm × 2 μm. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb^3＋ and Nb^5＋, or Nb^4＋.     

An easily-prepared impedance matched Josephson parametric amplifier

An impedance matched parametric amplifier (IMPA) with Josephson junctions is fabricated and characterized. A hybrid structure containing coplanar and strip structures is implemented to realize an impedance taper line and a plate capacitor in an LC nonlinear resonator based on Josephson junctions. The upper plate of the capacitor is isolated with SiN_x without grounding as well as the strips. Such easily-prepared designs greatly reduce the requirements for lithography alignment and precision, which makes the fabrication process more reliable. The experimental results show that in such IMPA a gain higher than 25 dB with a bandwidth of about 100 MHz can be obtained. This broadband amplifier operates close to the quantum limit. By adjusting the working point, a higher bandwidth of about 400 MHz can be obtained with a gain of about 17 dB.     

Nb/A1-AlO_X/Nb隧道结的制备研究

通过改进RIE的刻蚀工艺和绝缘层的生长工艺,在SiO2/Si衬底上制备出了性能良好的超导Nb/A1-AlOX/Nb隧道结。采用CF4作为刻蚀气体,降低了RIE对结势垒层和衬底SiO2层的刻蚀。使用PECVD生长绝缘层SiO2,改善了绝缘性能,从而降低了隧道结的漏电流。     

Rs标准测量系统的研究及其误差讨论

本文主要介绍了按照目前国际上制定的超导薄膜表面阻抗Rs标准测量方案（IEC／TC90）设计并制造的Rs标准测量系统，对实验过程中系统的细节作了改进，测试精度及可靠性作了分析，实验及结果证明该标准的可行性，同时说明了我们的测试系统符合国际超导薄膜表面阻抗Rs标准 测量的要求。     

利用倾斜角度蒸发法制备Al/Al_2O_3/Al超导隧道结

利用电子束曝光法对双层光刻胶进行曝光来制备悬空掩模结构,在此基础上利用电子束蒸发系统采用倾斜角度蒸发法制备铝超导薄膜,采用热氧化法在底层铝膜表面形成氧化铝作为势垒层,制备出铝SIS超导隧道结,并在360mK的情况下对铝结进行了Ⅰ～Ⅴ特性的初步测量.铝隧道结的成功制备为下一步构建超导量子比特器件,研究其量子特性奠定了良好的基础.