激光照射下的低温氧化生成锗的纳米结构及其特性

在高精度椭偏仪（HPE）系统中，采用激光照射硅锗合金衬底助氧化的新方法，在SiO2层中生成锗的双纳米面结构；并在样品生长过程中，用HPE同步测量样品的纳米结构. 用Raman光谱仪测量样品的横断面，发现很强的PL发光谱峰. 用量子受限模型和改进的量子从头计算（UHFR）方法分析了PL光谱的结构. 关键词： 高精度椭偏仪 锗的纳米结构 PL光谱 量子受限     

苯乙烯在顺1,4-聚丁二烯上的接枝共聚反应动力学的Monte Carlo模拟

用ＭｏｎｔｅＣａｒｌｏ模拟方法对苯乙烯在顺１，４－聚丁二烯上的接枝反应动力学进行了研究。模拟结果表明，对于不同的橡胶浓度，接枝的和均聚的聚苯乙烯的数均聚合度、接枝效率与苯乙烯在顺１，４－聚丁二烯上的接枝共聚反应的动力学的解析解十分吻合，证明本方法能够有效地应用于自由基型接枝共聚合反应体系。     

热退火、激光束和电子束等作用对纳米硅制备及其局域态发光特性的影响

在纳米晶体硅制备的过程中, 晶化处理是影响和提高纳米硅发光效率的重要制备环节. 热退火、激光退火和电子束辐照是使纳米硅样品晶化的不同方式. 实验表明: 选取适当的晶化方式和参量对制备纳米硅晶体结构至关重要, 特别是在制备硅量子点和量子面的过程中控制好参量, 可以得到较高的发光效率. 有趣的是, 在实验中发现: 当晶化时间较短(如低于20 min)时, 可以获得较好的纳晶硅结构(如量子点结构), 对应于较好的纳晶硅光致发光(PL)和掺杂局域态发光; 当晶化时间较长(如超过30 min)时, 纳米晶体硅结构被破坏, 致使PL谱逐渐减弱与消失. 结合热退火、激光退火和电子束辐照对纳米硅晶化过程, 本文建立起晶化时间对纳米硅局域态发光影响机理的物理模型, 解释了晶化时间对纳米硅局域态发光的影响.     

Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser

Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence (PL) emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission.     

Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser

A new nanolaser concept using silicon quantum dots (QDs) is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional (2D) photonic crystal can be used to select the model in the nanolaser.     

硅量子点的形状及其弯曲表面效应

硅量子点的弯曲表面引起系统的对称性破缺, 致使某些表面键合在能带的带隙中形成局域电子态.计算结果表明:硅量子点的表面曲率不同形成的表面键合结合能和电子态分布明显不同. 例如, Si–O–Si桥键在曲率较大的表面键合能够在带隙中形成局域能级, 而在硅量子点曲率较小的近平台表面上键合不会形成任何局域态, 但此时的键合结合能较低. 用弯曲表面效应(CS)可以解释较小硅量子点的光致荧光光谱的红移现象. CS效应揭示了纳米物理中又一奇妙的特性. 实验证实, CS效应在带隙中形成的局域能级可以激活硅量子点发光. 关键词： 硅量子点 弯曲表面效应 表面键合 局域能级     

Curved surface effect and emission on silicon nanostructures

The curved surface （CS） effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience （PL）, such as LN, LNO, Lo1, and Lo2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the Lyb line of electroluminescence （EL） emission.     

多孔硅量子点的受激辐射：陷阱态的作用

 经激光辐照和高温退火后能够在硅基上生成氧化多孔硅结构。用514 nm的激光泵浦,观测到该多孔硅的受激辐射。当激励强度超过阈值时,在650～750 nm区域有很强的受激发光峰。这些受激发光峰的半高宽小于0.5 nm。激光辐照和高温退火后,在样品上能形成某些特殊的氧化结构。在傅里叶红外光谱分析中,显示有硅氧双键或硅氧桥键在硅表面形成。计算结果表明：当硅氧双键或硅氧桥键形成时,电子的陷阱态出现在纳晶硅的带隙中。价带顶和陷阱态之间的粒子数反转是解释这种受激辐射的关键。     

Self-assembled germanium nano-structures by laser-assisted oxidation

The investigation on the oxidation behaviour of Si自聚集锗 纳米结构 激光辅助氧化 PL光谱low-temperature oxidation, laser-assisted, nano-structure, PL spectraProject supported by the Natural Science Foundation of Guizhou Province, China (Grant No 3067(2004)).2005-04-202005-04-202005-10-08The investigation on the oxidation behaviour of Si1-xGex alloys （x=0.05, 0.15, and 0.25） is carried out. It is found for the first time that on the oxide film a germanium nano-cap with a thickness of 1.8-2.8nm and a few Ge nanoparticles with diameters ranging from 5.5 nm to 10 nm are formed by the low-temperatu.re laser-assisted dry oxidation of Si1-xGex substrate. A new scanning method on the decline cross-section of the multiple-layer sample is adopted to measure the layer thickness and the composition. Some new peaks in photoluminescence （PL） spectra are discovered, which could be related to the nano-cap and the nano-particles of germanium. A suitable model and several new calculating formulae with the unrestricted Hartree-Fock-Roothaan （UHFR） method and quantum confinement analysis are proposed to interpret the PL spectra and the nano-structure mechanism in the oxide.     

黔西南卡林型金矿中超微金的微束分析研究

应用同步辐射X射线荧光分析、电子探针及分析电子显微镜等微束分析技术,成功地研究了我国西南几个卡林型金矿中超微金的赋存状态,对所谓的“不可见”金(5—500nm)直接得到了它们的背散射电子像、透射电子像、元素特征X射线面分布和X射线强度分布曲线、特征X射线能谱图及电子探针定量分析结果。