改进FIA荧光光度法测定维生素B_1含量

利用自行研制流动比色皿在荧光光度计上实现了流动注射荧光光度法检测口服药片(口服液)中VB1含量.荧光动态响应信号与维生素B1含量在0.025-3.20,μg·mL-1范围内呈良好线性关系(r=0.9996),检出限为0.025μg·mL-1对0.15μg·mL-1样品测定的相对标准偏差为1.43%(n=11).     

Activation of silicon quantum dots for emission

The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matter for emission. Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots. Our experimental results demonstrate that annealing is important in the treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.     

Quantum confinement analysis of nanostructures in oxidation of SiGe alloys

We report the investigation on the oxidation behaviour of Si_{1-x}Ge_x alloys (x=0.05, 0.15, and 0.25). It was found for the first time that a nanocap (thickness: 1.6－2.0nm) was formed on the oxide film after fast oxidation. Some new peaks in photoluminescence spectra were discovered, which could be related to the Ge nanocap, the Ge nanolayer (thickness: 0.8－1.2nm) and the Ge nanoparticles (with various diameters from 2.6nm to 7.4nm), respectively. A suitable model and several new calculating formulae combined with the Unrestricted Hartree－Fock－Roothaan (UHFR) method and quantum confinement analysis have been proposed to interpret the PL spectra and the nanostructure mechanism in the oxide and Ge segregation.