| Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser |
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| 作者姓名： | 黄伟其 刘家兴 蔡成兰 吕泉 刘世荣 秦朝建 |
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| 作者单位： | Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;State Key Laboratory of Ore Deposit, Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China;State Key Laboratory of Ore Deposit, Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 10764002 and 60966002), and by the National Key Laboratory of Surface Physics at Fudan University. |
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| 摘 要： | Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence (PL) emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission.
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| 关 键 词： | nitrogen and oxygen quantum dots stimulated emission localised states |
| 收稿时间： | 2009-12-11 |
| 修稿时间： | 4/1/2010 12:00:00 AM |
Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser |
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| Huang Wei-Qi,Liu Jia-Xing,Cai Cheng-Lan,Lü Quan,Liu Shi-Rong,Qin Chao-Jian.Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser[J].Chinese Physics B,2010,19(9):97801-097801. |
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| Authors: | Huang Wei-Qi Liu Jia-Xing Cai Cheng-Lan Lü Quan Liu Shi-Rong Qin Chao-Jian |
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| Institution: | Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China; State Key Laboratory of Ore Deposit, Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China |
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| Abstract: | Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence (PL) emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission. |
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| Keywords: | nitrogen and oxygen quantum dots stimulated emission localised states |
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