激光照射下的低温氧化生成锗的纳米结构及其特性

在高精度椭偏仪（HPE）系统中，采用激光照射硅锗合金衬底助氧化的新方法，在SiO2层中生成锗的双纳米面结构；并在样品生长过程中，用HPE同步测量样品的纳米结构. 用Raman光谱仪测量样品的横断面，发现很强的PL发光谱峰. 用量子受限模型和改进的量子从头计算（UHFR）方法分析了PL光谱的结构. 关键词： 高精度椭偏仪 锗的纳米结构 PL光谱 量子受限

Optical constants of Ge nanolayers in oxidation of SiGe alloys determined by ellipsometry

We investigate the oxidation behavior of Si 1-xGe x allo ys (x=0. 005,0.02,0.05,0.15 and 0.25). A new ellipsometric method is used for the gene rating and measuring Ge nanostructures in oxidation of SiGe alloys. The fundamental optical constants of Ge nanolayers in the sample were de termined by ellipsometry. The thickness and origin of the Ge bi_nanolayer were f ound. A new peak in photoluminescence PL spectra was discovered, which is relate d to the Ge bi_nano layer (thickness: 0.8\_1.4nm). Some suitable model and calculating formula can be provided with the UHFR method and quantum confinement analysis to interprete th e PL spectrum and the nanostructure mechanism in the oxide.