氦原子(e,2e)反应中末通道屏蔽效应的理论研究

在Chen等人工作(2001,Chin. Phys. 10 290)的基础上,进一步对(e,2e)反应的末态He+中核外电子的有效屏蔽给出修正.并用修正后的索末菲参量计算了入射能为40 eV时,共面不对称几何条件下电子离化He原子的三重微分截面.所得结果与其它理论结果及最新绝对测量的实验数据进行比较发现:所得到的理论曲线更接近实验数据.     

手机锂电池充放电过程的研究

利用COBRA3实验设备测试了锂电池待机充放电过程的电压、电流、锂电池电容量及充电量的变化情况。提出通过实时测量锂电池电压值,可精确换算出锂电池的剩余容量的方法。手机待机充电所需时间和关机充电所需时间基本一致。     

氢离子与里德伯原子碰撞中的电荷转移过程

应用双中心原子轨道强耦合方法研究了H⁺与里德伯态原子Li（5d）碰撞的电荷转移过程,计算了电子转移到氢原子各个n,l壳层（这里n为主量子数,l为角量子数）的态选择截面.结果发现,电荷转移的末态主要分布在与初态电子能量5d接近的n=4—7能级,该分布随碰撞能量的变化不大;但俘获末态的l分布对入射离子能量很敏感：在1 keV左右的低能时主要分布在高l的末态,随着碰撞能量增加峰值逐渐向低l方向移动,并在l= 关键词： 电子俘获过程 双中心原子轨道强耦合方法 态选择截面     

GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响

通过理论计算研究GaMnN铁磁共振隧穿二极管自旋电流输运特性.理论结果表明在电流特性曲线上出现两个明显的自旋分裂峰.该电流自旋分裂峰和相应的自旋极化随温度的升高而逐渐减小消失.当进一步考虑到GaN异质结界面极化电荷影响时,自旋向下的电流共振峰得到明显增强,同时电流的自旋极化也得到相应的提高.在一定的极化电荷条件下,可以获得较高的自旋极化电流. 关键词： GaMnN 共振隧穿 自旋电流 极化电荷     

随机静态存储器低能中子单粒子翻转效应

 建立了中子单粒子翻转可视化分析方法,对不同特征尺寸（0.13~1.50 μm）CMOS工艺商用随机静态存储器(SRAM)器件开展了反应堆中子单粒子翻转效应的实验研究,获得了SRAM器件的裂变谱中子单粒子翻转截面随特征尺寸变化的变化趋势。研究结果表明:SRAM器件的特征尺寸越小,其对低能中子导致的单粒子翻转的敏感性越高。     

New test and analysis of position-sensitive-silicon-detector

We have tested and analyzed the properties of two-dimensional Position-Sensitive-silicon-Detector （PSD） with new integrated preamplifiers. The test demonstrates that the best position resolution for 5.5 MeV α particles is 1.7 mm （FWHM）, and the best energy resolution is 2.1%, which are notably better than the previously reported results. A scaling formula is introduced to make the absolute position calibration.     

Charge transfer of 1 ML C60/Ag（100）

We have measured the synchrotron radiation photoelectron spectra of monolayer C60on Ag（100）, By calculating the intensity ratios between the LUMO bands and the two deeper bands （HOMO and HOMO- 1）, we estimate the amount of the charges transferred from Ag（100） to C60 within the range of 1 e to 1.8 e. The results dismay the expectation of surface superconductivity and afford a good reference for further studies of the monolayer C60/Ag（100） system.     

Divergence preservation in the ADI algorithms for electromagnetics

The recent advances in alternating direct implicit (ADI) methods promise important new capability for time domain plasma simulations, namely the elimination of numerical stability limits on the time step. But the utility of these methods in simulations with charge and current sources, such as in electromagnetic particle-in-cell (EMPIC) computations, has been uncertain, as the methods introduced so far do not have the property of divergence preservation. This property is related to charge conservation and self-consistency, and is critical for accurate and robust EMPIC simulation. This paper contains a complete study of these ADI methods in the presence of charge and current sources. It is shown that there are four significantly distinct cases, with four more related by duality. Of those, only one preserves divergence and, thus, is guaranteed to be stable in the presence of moving charged particles. Computational verification of this property is accomplished by implementation in existing 3D-EMPIC simulation software. Of the other three cases, two are verified unstable, as expected, and one remains stable, despite the lack of divergence preservation. This other stable algorithm is shown to be related to the divergence preserving case by a similarity transformation, effectively providing the complement of the divergence preserving field in the finite-difference energy quantity.     

Tunneling of Charged and Magnetized Fermions from the Kerr-Newman-Ads Black Hole with Magnetic Charges

Tunneling of charged and magnetized Dirac particles from the Kerr-Newman-Ads black hole with magnetic charges is discussed in this paper. Owing to the electric and magnetic fields would couple with gravity field, we introduce the Dirac equation of charged and magnetized particles. Then by redefining the equivalent charge and gauge potential corresponding to the source with electric and magnetic charges, we discuss this tunneling once and obtain the same Hawking temperature. Both results show that the fermions tunneling formalism also come into existence in the charged and magnetized background space time.     

在均匀磁场中旋转的导体厚球壳上电荷的分布--证明在磁场中转动的导体表面电荷分布无普遍公式

用简单方法求出了在均匀磁场中旋转的导体厚球壳上电荷的分布,证明了在磁场中转动的导体表面电荷分布无普遍公式。