强流脉冲电子束辐照诱发多晶纯铝中的空位缺陷簇结构

利用强流脉冲电子束（HCPEB）技术对多晶纯铝样品进行辐照,采用透射电子显微镜详细分析了辐照诱发的空位簇缺陷.HCPEP辐照后,在辐照表层内形成了大量的四方形空位胞,其间包含位错圈和堆垛层错四面体（SFT）等类型的空位簇缺陷.1次辐照后,空位胞内产生空位型位错圈,5次辐照则主要产生SFT;10次辐照后,空位胞内产生的空位簇缺陷主要是位错圈,局部区域也观察到了SFT缺陷,在产生SFT的附近区域具有很低的位错密度或者几乎无位错出现.HCPEB辐照产生的瞬间加热和冷却诱发了幅值极大且应变速率极高的应力,这一因素 关键词： 强流脉冲电子束 多晶纯铝 空位簇缺陷 堆垛层错四面体     

具有六方晶系结构的多晶体材料弹性常数——Y弹性常数

利用最近提出的新的物理参量——Ｙ弹性常数,将其应用于具有六方晶系结构的多晶体材料.推导了六方晶系结构的多晶体材料之Ｙ弹性常数,通过算例与具有六方晶系结构的多晶体材料之X射线弹性常数进行了比较.运用这个Ｙ弹性常数进一步推导出的多晶体材料整体之机械弹性常数的表达式与Kneer的研究结果中的表达式虽然形式不同,但针对具体材料所计算的结果却完全符合. 关键词： Y弹性常数 六方晶系 多晶体材料     

溶液法铝诱导晶化制备多晶硅薄膜

采用铝（Al）盐溶液作为诱导源进行了非晶硅晶化成多晶硅的研究.光学显微镜观测与Raman光谱分析表明,合适配比的铝盐溶液能够将非晶硅予以诱导晶化.采用剥层XPS测试分析,探究了Al盐溶液与硅表面可能的化学反应以及随之发生的硅-铝层交换的过程.最后对溶液法诱导晶化的机理进行了讨论. 关键词： 铝诱导晶化 多晶硅薄膜 溶液法     

Sr3YCo4-xMgxO10.5+δ(0≤x≤0.04)多晶的制备和热电输运性质研究

采用固相反应法制备Sr3YCo4-xMgxO10.5+δ(0≤x≤0.04)系列多晶,研究了Mg掺杂对体系结构、电输运和热电性质的影响.结果表明系列多晶为四方晶系,由于掺入的Mg2+(0.066 nm)部分替代了Co3+/4+(0.053 nm/0.061 nm),使晶格膨胀;多晶热电势在340~830 K随温度升高而下降,且Mg掺杂对热电势影响不大,表明Mg掺杂对体系载流子浓度影响不大;多晶电阻率在100~300 K随温度升高而降低,且随着掺杂量增加电阻率降低,结合扫描电镜观察到多晶的气孔数目减少、晶粒连接紧密和热电势的结果认为Mg掺杂对体系电输运性质的影响机制主要是使气孔、晶界散射作用减弱、载流子迁移率变大,而Mg掺杂对载流子浓度的影响是次要的.     

Realizing High Thermoelectric Performance in Slightly Na-doped SnSe Polycrystals北大核心CSCD

The thermoelectric properties of Na-doped polycrystalline NaxSn1-xSe (x=0.001～0.005), prepared by fusion method, were investigated in the temperature from 300 K to 873 K. The results show that, upon slightly doping of Na (x<0.005),besides a large reduction of thermal conductivity the electrical conductivity of NaxSn1-xSe samples is increased by around two orders of magnitude, reaching 78 Scm-1 at 850 K;simultaneously,they possess large values (～300 V/K, 850 K) of thermopower. As a result, a high value of ZT= ～1.2 (at 873 K) is achieved for Na-doped polycrystalline Na0.003Sn0.997Se, which is the highest ZT value ever reported for Na-doped SnSe polycrystals.     

部分硫/硒(S/Se)红外非线性晶体原料的快速合成方法研究

含有硫/硒(S/Se)元素的部分化合物在现有中红外非线性晶体材料中占据相当重要的地位.高纯多晶原料是生长优质S/Se光学晶体的基础,但常规合成方法存在周期长、数量少等缺点.为此,针对部分S/Se化合物,我们对传统的合成方法进行优化、改进,实现GaSe,AgGaSe2,AgGaGeS4,AgGaGe5Se12等的快速合成,单次合成原料200～300 g,合成周期小于48 h,经过粉末衍射(XRD)测试表明合成的原料质量较好,能够生长出较大尺寸单晶.文中对快速合成方法的机理、存在的问题等也进行了相关讨论.     

Magnetic properties of bulk polycrystalline Pr1-x Ndx（x=0,0.8）FeB permanent magnets

For spin reorientation （SRT）, the applications of sintering NdFeB permanent magnets are limited at low temperature. The sintering PrFeB permanent magnet （PM） presents no SRT and shows excellent magnetic properties at low temperature. The magnetic properties of bulk polycrystalline sintering Prl-xNdxFeB （x = 0 and 0.8 correspond to P42H and N50M respectively） are studied in this paper. The results show that magnetic properties and stability of N50M are better than those of 42H at room temperature. With the decrease of temperature, the parameters ofBr, Hcb, and Hci of P42H present a nearly linear increasing trend; Br and Hcb of N50M first increase and then decline, Hci presents an increasing trend. At 77 K, Br, Hci, and Jr of P42H are increased by 18.7%, 308%, and 17.1% respectively over than those at 300 K; at 120 K, Br, Hci, and Jr of N50M are increased by about 16.19%, 245%, and 12.6% respectively over than those at 300 K. The magnetic properties of P42H are better than those of N50M at low temperature. The sintering PrFeB is the preferred PM in various low-temperature devices.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

掺镱钆镓石榴石激光透明陶瓷纳米粉体的研究

以Gd_2O_3、Yb_2O_3和Ga_2O_3为初始原料,碳酸氢铵为沉淀剂,硫酸铵为分散剂,采用均相共沉淀方法制备了Yb~(3+): Gd_3Ga_5O_(12) (Yb: GGG).用差热-热重分析仪、X 射线衍射仪、红外光谱分析仪、扫描电镜、透射电镜等测试方法对Yb: GGG粉体进行了表征.结果表明:前驱体经过900 ℃煅烧8 h 后已完全转变成纯立方相GGG多晶样品,所得的粉体分散性好,团聚轻,颗粒尺寸在50～100 nm之间.本文亦对均相共沉淀法合成Yb: GGG的反应过程进行了探讨.     

Effect of microstructure on the hardening and softening behaviors of polycrystalline shape memory alloys Part II: Numerical simulation under axisymmetrical loading

Based on the microstructure-based constitutive model established in Part I, a detailed numerical investigation on the role of each microstructure parameter in the kinematical and kinetic evolution of polycrystalline SMA under axisymmetrical tension loading is performed. Some macroscopic constitutive features of stress-induced martensite transformation are discussed. The subject supported by the Research Grant Committee (RGC) of Hong Kong SAR, the National Natural Science Foundation of China and the Provincial Natural Science Foundation of Jiangxi Province of China