使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

纤锌矿型量子级联激光器的界面与受限声子比较(英文)

利用传输矩阵方法对纤锌矿型量子级联激光器有源区的界面与受限声子进行了研究.计算结果显示:在纵光学频域有一组界面声子与二组受限声子存在,而且最低频率的两个界面声子在一定条件下能转变为受限模式.通过比较界面声子与受限声子的色散及声子势发现两者有很大不同,且计算电声散射速率可以发现由这两种声子引起的散射率是可比拟的.     

The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.     

MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range

We report the metal organic vapor phase epitaxy (MOVPE) growth and characterization of non‐polar (11 0) a ‐plane Al_x Ga_1–xN on (1 02) r ‐plane sapphire substrates over the entire composition range. Al_x Ga_1–xN samples with ～0.8 μm thick layers and with x = 0, 0.18, 0.38, 0.46, 0.66, and 1.0 have been grown on r ‐plane sapphire substrates. The layer quality can be improved by using a 3‐stage AlN nucleation layer and appropriate V/III ratio switching following nucleation. All a ‐plane AlGaN epilayers show an anisotropic in‐plane mosaicity, strongly influenced by Al incorporation and growth conditions. Careful lattice parameter measurements show anisotropic in‐plane strain that results in an orthorhombic distortion of the hexagonal unit cell, making Al composition determination from X‐ray diffraction difficult. In general lower Al incorporation is seen in a ‐plane epilayers compared to c ‐plane samples grown under the same conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.     

Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响

采用金属有机化合物化学气相沉积（MOCVD）方法制备了不同Al组分（x=0.19,0.22,0.25,0.32）的Al_xGa_1-xN/AlN/GaN 结构的高电子迁移率晶体管（HEMT）材料。研究了Al_xGa_1-xN势垒层中Al组分对HEMT材料电学性质和结构性质的影响。研究结果表明,在一定的Al组分范围内,二维电子气（2DEG）浓度和迁移率随着Al组分的升高而增大。然而,过高的Al组分导致HEMT材料表面粗糙度增大,2DEG迁移率降低,该实验现象在另一方面得到了原子力显微镜测试结果的验证。在最佳Al组分（25%）范围内,获得的 HEMT材料的2DEG浓度和室温迁移率分别达到1.2×10¹³ cm^-2和1 680 cm²/（V·s）,方块电阻低至310 Ω/□。     

用逆压电极化模型对AlGaN/GaN 高电子迁移率晶体管电流崩塌现象的研究

通过自洽求解一维Poisson-Schrdinger方程,模拟了AlGaN/GaN高电子迁移率晶体管在工作时等效外电场对AlGaN/GaN异质结沟道处二维电子气(2DEG)浓度的影响.分析了逆压电极化效应的作用,从正-逆压电极化现象出发,提出了逆压电极化模型.计算结果显示：逆压电极化明显影响2DEG性质,当Al组分x=0.3,AlGaN层厚度为20 nm时,不考虑逆压电极化,2DEG浓度为1.53×10¹³cm^-2;当等效外电压分别为10和15V 关键词： AlGaN/GaN高电子迁移率晶体管 Poisson-Schrdinger方程 逆压电极化模型 电流崩塌     

High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz

Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (f_T) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×10¹³cm^-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high f_T/f_max of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of f_T/f_max for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of f_max over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs.