Magnetism of single-walled silicon carbide nanotubes doped by boron,nitrogen and oxygen

We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X_Si, or the carbon atom X_C, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by B_C exhibits a magnetic moment of 1 μ_B/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B_Si), induce a magnetic moment of 0.46 μ_B/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N_C) and (N_Si) each case induce a magnetic moment of 1 μ_B/cell in armchair (6,6), while N_Si give rise to 0.75 μ_B/cell in zigzag (10,0) and no magnetic moment for N_C. In contrast the case of O_C and O_Si did not produce any net magnetic moment in both zigzag and armchair geometries.     

静电放电对GaN基功率型LED老化特性的影响

对GaN基蓝光功率型LED在老化前和老化期间施加反向人体模式静电放电(ESD),并对静电打击前后及老化前后的LED光学电学参数进行分析。实验结果及理论分析表明,ESD使LED芯片有源层及限制层中产生缺陷,最终导致电学特性及光学特性的变化。ESD给LED带来的损伤可在老化前期过程中被局部恢复,但随着老化时间推移,电参数漂移程度及光衰幅度不断增大,而老化过程中LED对ESD的敏感度增加,使LED抗ESD能力减弱。     

科学级光学CCD暗电流及机械快门时间响应特性测试

暗电流在科学级电荷耦合器件(CCD)长时间曝光测试实验中是主要的噪声之一。实验测试了暗电流信号平均计数随曝光时间的变化关系,并经过计算得出-10℃和-20℃下暗电流分别为2.43ADU/(s.pixel)和0.4854ADU/(s.pixel),同时测试了暗电流随CCD制冷温度的变化特性,结果显示暗电流随温度类似指数函数形式变化。由于CCD机械快门的时间响应特性对科学级光学CCD的短时曝光计数的影响比较大,实验测试了CCD平均计数和曝光时间的关系,得出实验所用的TEK 512pixel×512pixel DB CCD的机械快门在18ms时能够完全打开。     

光刻物镜中透镜高精度支撑结构的设计及分析

光刻投影物镜中透镜的面形精度是影响光学系统成像质量的关键因素之一。为实现透镜面形精度均方根(RMS)值优于2nm的高精度指标,提出一种轴向多点挠性支撑、径向三点可调式定位的光学透镜支撑结构。基于自重变形对支撑结构进行优化设计,深入分析在此支撑结构下自重和热载荷对透镜面形影响。结果表明,重力引起的透镜上表面面形RMS值为0.186nm,下表面面形RMS值为0.15nm。热载荷引起的上表面面形RMS值为0.55nm,下表面面形RMS值为0.54nm。采用这种透镜的支撑结构,能够满足光刻投影物镜中透镜的高精度面形要求。     

Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6Hben SiC substrates

In this paper, the epitaxial graphene layers grown on Si- and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 ℃. By using atomic force microscopy and Raman spectroscopy, we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates, including the hydrogen etching process, the stacking type, and the number of layers. Hopefully, our results will be useful for improving the quality of the epitaxial graphene on SiC substrate.     

Dual‐wavelength optical parametric oscillator using antiresonant ring interferometer

A novel technique for coupling of two resonant optical cavities using an antiresonant ring (ARR) interferometer is reported. By deploying two synchronously‐pumped femtosecond optical parametric oscillators (OPOs), it is shown that the use of an ARR can provide an intracavity common path for the two oscillating fields, but without gain coupling between the two nonlinear media. The new technique permits the generation of two signal (idler) wavelengths, which can be independently and arbitrarily varied across the OPO tuning range. The absence of gain coupling also enables unrestricted and uninterrupted tuning through wavelength degeneracy at any arbitrary point within the OPO tuning range. It is shown that signal wavelength pairs tunable across 1500–1580 nm, corresponding to a frequency separation from ∼ 10 THz down to exact degeneracy, can be generated from the coupled OPOs, limited only by the reflectivity of the available mirrors.     

1.2m轻量化SiC主镜支撑系统优化设计

针对1.2 m轻量化SiC主镜,提出了轴向支撑采用18点Whiffle-tree结构结合压杆结构,侧向支撑采用A-Frame柔性机构结合切向支撑机构的支撑方案。从原理上对该主镜支撑方案进行了分析,说明了采用以上两种结构的优点;通过有限元方法对各个机构参数进行了分析、优化,并对整体结构进行了静力学以及热学仿真。实验显示：在参考温度下主镜面形精度（RMS）值为3.5 nm;温差达到40℃时,RMS值为11.1 nm。该设计方案满足了1.2 m轻量化SiC主镜的支撑要求,同时可以很好地抵消热应力对主镜的影响。     

表面印迹聚合物及其在微流控器件中的应用

分子印迹聚合物是通过在模板存在下固化交联的聚合物制备的.在固化过程中,聚合物和模板间形成非共价键.这些非共价结合位点被"冻结"在交联的聚合物中,即使移去模板后也依然维持他们的形状.余下的空穴与模板的尺寸和形状一致,并且可以选择性地从流过的混合物中俘获模板物质.在近几十年中,分子印迹的领域由选择性俘获小分子扩展到处理各种类型的样品.分子印迹聚合物(MIP)被用于分析种类繁多的样品,比如金属离子、药物分子、环境污染物、蛋白、病毒以至整个细胞.本文中我们综述相对较新的领域——表面印迹,这是一种可以用来生成相对较大的生物相关模板的印迹方法.传统的整体印迹法是直接在固化前将模板加入预聚体中,因而不适用于那些大到无法从固化后的聚合物中扩散出来的物质.要仅在表面上生成结合位点,必须要使用特别的方法,由此产生的表面印迹技术解决了分离科学以及化学和生物化学监测的重要问题.将印迹聚合物植入微流控芯片,大大扩展了微流体技术的适用性.本文叙述表面印迹最新的进展以及不同的实施手段,以及它们在微流控器件中的应用.     

CH2,NH,and O heteroatom substitution effects on the electronic,optical,and charge transport properties of a 2,1,3-benzothiadiazole-based derivative:Insights from theory

A set of CH2-,NH-,and O-substituted 2,1,3-benzothiadiazole(BTD)-based derivatives have been investigated theoretically in order to explore their electronic,optical,and charge transport properties.The calculation results show that the electronic and optical properties of the pristine molecule can be easily tuned through changing the S substituent in the central aromatic ring.Based on the calculated maximum emission wavelength,we predict that CH2-,NH-,and O-substituted BTD-based derivatives could be used as red,green,and orange light-emitting materials,respectively.After CH2-,NH-or O-substitution,the oscillator strengths of the emission spectra are enhanced with respect to that of the pristine molecule,implying that these compounds have larger fluorescence intensity.Finally,it can be deduced that CH2-,NH-,and O-substituted BTD-based derivatives may act as hole transport materials in organic light-emitting diodes.     

The origin of a peak in the reststrahlen region of SiC

A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.