海藻酸钠/大豆蛋白共混凝胶微球的结构

利用钙离子交联海藻酸钠／大豆分离蛋白共混溶液，制得海藻酸钠／大豆分离蛋共混凝胶微球．结果表明，海藻酸钠和大豆分离蛋白质量配比的不同以及各组分间相互作用的变化，微球呈现不同的微观结构．将微球干燥后置于水中溶胀，微球的尺寸无法回复到干燥前的尺寸，这是由于真空干燥处理使水分子挥发，促进微球内组分间形成了强的氢键作用所致．此外，用碱处理该共混微球，发现由于大豆分离蛋白溶解以及部分钙离子被置换析出，微球塌陷且内部形成了大孔．     

26Al的加速器质谱测量及其应用

26Al是一个在多个学科都非常有意义的放射性核素。主要介绍了国内外在利用加速器质谱技术测量26Al时所开展的各种测量方法、各自的优缺点和测量灵敏度，并介绍了目前利用^26Al在地球科学、生物医学、核物理以及天体物理等诸多方面的应用研究工作。     

纳米晶复合Pr2Fe14B/α-Fe永磁材料磁性的研究

采用熔体快淬的方法制备Pr₂Fe₁₄B/α-Fe纳米晶复合永磁材料.使用振动样品磁强计(VSM)测量样品的室温磁性能.实验合金成分为(Pr_xFe_94.3-xB_5.7)_0.99Zr₁(其中x＝8.2，8.6，9.0，9.4，9.8，10.2，10.6，11.0，11.4(原子分数，%)).系统地研究了辊速及合金成分对快淬带磁性能的影响，当Pr原子分数由8. 关键词： 纳米复合永磁材料 熔体快淬 2Fe₁₄B/α-Fe')" href="#">Pr₂Fe₁₄B/α-Fe 磁性     

壳模型对143Pm核跃迁几率的计算

原子核跃迁几率理论计算和实验对比是分析描述原子核内部结构的主要手段之一。目前采用重离子核反应观测到^143Pm核（Z=61，N=82）高自旋能级结构:激发态最大能级达x=8397．6keV，对应自旋J=47／2（h=1）。利用核壳模型在计算^143Pm核能级结构及对应的自旋宇称基础上，系统地对其γ级联跃迁链以及纯E2跃迁进行了计算，并与实验数据进行对比。采用OXBASH程序的单粒子跃迁公式计算了^143Pm的跃迁几率。At present, the high spin state of ^143 Pm（Z = 61, N = 82） have been investigated. The level scheme of ^143Pm has been extended up to an excitation energy Ex = 8 397.6 keV and spin J =47/2（ h = 1 ）. Based on the nuclear shell model （NSM）, we have calculated the sequences of γ-ray transition rates and the pure E2 reduced transition probabilities of ^143Pm, and compared with experimental data. The formula of single-particle transition probability in the OXBASH code was applied in this paper.     

Halogen Bonding： An AIM Analysis of the Weak Interactions

A series of complexes formed between halogen-containing molecules and ammonia have been investigated by means of the atoms in molecules （AIM） approach to gain a deeper insight into halogen bonding. The existence of the halogen bond critical points （XBCP） and the values of the electron density （Pb） and Laplacian of electron density （V2pb） at the XBCP reveal the closed-shell interactions in these complexes. Integrated atomic properties such as charge, energy, polarization moment, volume of the halogen bond donor atoms, and the corresponding changes （△） upon complexation have been calculated. The present calculations have demonstrated that the halogen bond represents different AIM properties as compared to the well-documented hydrogen bond. Both the electron density and the Laplacian of electron density at the XBCP have been shown to correlate well with the interaction energy, which indicates that the topological parameters at the XBCP can be treated as a good measure of the halogen bond strength In addition, an excellent linear relationship between the interatomic distance d（X…N） and the logarithm of Pb has been established.     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al2O3调制层厚度的TiN/Al2O3纳米多层膜.利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能.研究结果表明,在TiN/Al2O3纳米多层膜中,单层膜时以非晶态存在的Al2O3层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa.进一步增加多层膜中Al2O3调制层的层厚度,Al2O3层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低.     

Upconversion luminescence of Tm^3＋/Yb^3＋ codoped oxyfluoride glasses

Novel oxyfluoride glasses are developed with the composition of 30SiO2-15Al2O3-28PbF2-22CdF2-0.1TmF3 - xYbF3 - （4.9 - x） AlF3（x=0, 0.5, 1.0, 1.5, 2.0） in tool fraction, Furthermore, the upconversion luminescence characteristics under a 970nm excitation are investigated. Intense blue, red and near infrared luminescences peaked at 453nm, 476nm, 647nm and 789nm, which correspond to the transitions of Tm^3＋： ^1D2 →^3F4, ^1G4 →^3H6, ^1G4 →^3F4, and ^3H4 →^3H6, respectively, are observed. Due to the sensitization of Yb^3＋ ions, all the upconversion luminescence intensities are enhanced considerably with Yb^3＋ concentration increasing. The upconversion mechanisms are discussed based on the energy matching rule and quadratic dependence on excitation power. The results indicate that the dominant mechanism is the excited state absorption for those upconversion emissions.     

s波超导体绝缘层dx2-y2波超导体结的直流Josephson电流

在s波超导体绝缘层dx2-y2波超导体结(sId)中,考虑到结界面粗糙散射,运用BogoliubovdeGennes(BdG)方程和FurusakiTsukada(FT)电流公式,计算超导结中的准粒子传输系数和直流Josephson电流.结果表明:sId超导结的直流Josephson电流随温度以及结两侧的相位差变化的关系曲线强烈地依赖于d波超导体的晶轴方位;结界面的粗糙散射对Josephson电流有抑制作用 关键词： s/I/d超导结 dx2-y2波超导体 直流Josephson电流     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器