衬底对PTCDA薄膜结构与电荷输运特性的影响

在不同导电衬底(Au,Al和ITO)上制备了PTCDA薄膜,用XRD和AFM技术研究了PTCDA薄膜的结构和表面形貌。结果表明,薄膜中的大部分PTCDA分子平面与衬底不平行,这表明薄膜垂直方向的电流传导将以电子传输为主;在ITO和Au衬底上生长的PTCDA薄膜晶粒排列规则,在薄膜垂直方向呈现出较好的电子传输性能;而在Al衬底上生长的PTCDA薄膜晶粒排列无序,电子传输性能差。通过制备单层结构有机薄膜器件,研究了PTCDA薄膜垂直方向的电子迁移率。综合应用金属-有机界面的热电子发射理论和有机层体内空间电荷限制传导理论,并考虑电场强度对迁移率变化的影响,对ITO/PTCDA/Al器件的电流密度-电压曲线进行拟合,得到ITO衬底上生长的PTCDA薄膜在垂直方向随电场强度变化的电子迁移率数值。     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors

The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors （E-mode HEMTs） are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad （Si）, the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

飞秒激光作用下硅载流子浓度的超快变化过程数值模拟

根据硅材料的各参数和载流子浓度的速率方程,对超短脉冲激光辐照硅后栽流子浓度随时间的变化过程进行了数值计算。从硅载流子浓度驰豫速率方程出发,在单一载流子温度假设的基础上,推导出简化后的硅载流子浓度驰豫速率方程,并在Matlab平台上用4阶龙格-库塔法对微分方程进行了数值计算。数值计算和实验结果相似性较好。     

硅对激光的响应

综述了硅材料在激光辐照下出现的各种效应研究结果。重点探讨了硅对激光的吸收机制,给出了波长、温度、声子能量、激光强度、自由载流子浓度等因素对吸收系数的影响机理。探讨了载流子及能量的输运过程和载流子复合机理,分析了各种复合机制的重要程度,探讨了损伤特性与激光参数的关系。     

两种磷光材料在聚合物掺杂体系中的发光特性研究

磷光材料由于可以利用电致激发所形成的单重态和三重态激子,因而可以得到接近100%的内量子效率。文章对常温下基于磷光材料Ir(ppy)₃及Ir(piq)₃掺杂PVK薄膜为发光层的器件的光学和电学特性进行了研究。光致发光的结果显示相同掺杂质量比下由PVK到Ir(piq)₃的能量传递比到Ir(ppy)₃更加困难。通过研究两种掺杂体系不同质量比的电致发光特性,可以认为这两种磷光器件的发光主要来自于磷光客体分子直接俘获载流子发光而非主体的能量传递。Ir(piq)₃掺杂体系对掺杂比例的依赖更为明显,从能级结构分析,认为是由于Ir(piq)₃的更低的HOMO及高的LUMO能级,而比Ir(ppy)₃具有更好的载流子俘获和传输特性。     

用于全光波长转换的外腔半导体激光器的注入电流选择

实验研究了注入光对光纤光栅外腔半导体激光器阈值电流的影响,给出了可同时获得高消光比和高转换速率的注入电流范围。采用载流子消耗机抽对实验结果进行了实性分析。     

SiC电子霍耳迁移率的计算

基于对自身能带结构的分析以及各向同性弛豫时间近似法,采用三椭球等能面、抛物线性简化,建立了适于模拟n型6H-SiC电子霍耳迁移率和霍耳散射因子的解析模型,精确描述了不同散射机制对于6H-SiC低场电子输运特性的影响.计算结果与实测值有很好的一致性.     

聚(3-己基)噻吩薄膜中电荷传导的研究

对两种具有相同化学结构的聚(3-己基)噻吩膜进行了电荷传导研究以检验膜的结构对载流子迁移率的影响. 一种膜是由3-己基噻吩单体经电化学合成直接制备的膜(原位生长膜); 另一种膜是将原位生长膜溶于三氯甲烷后重新滴涂而成的(滴涂膜). 研究表明, 虽然两种膜的制备方法不一样, 但在最低(0.02%)和较高(20%～30%)掺杂率下两膜中的载流子迁移率相一致; 然而在中等掺杂率区域, 两膜中的载流子迁移率明显不同. 对于原位生长膜, 载流子迁移率在低掺杂区域几乎保持不变, 当掺杂率大于1%后开始上升; 而在滴涂膜中, 随着掺杂率的增加, 迁移率先下降然后迅速升高. 上述两种迁移率变化特征分别与以前研究中观察到的电化学合成高分子膜和化学合成高分子旋涂或滴涂膜中迁移率的变化特征相一致, 表明了迁移率随掺杂率变化特征的改变是由膜的结构变化而引起的