Novel correction method for X-ray beam energy fluctuation of high energy DR system with a linear detector

A high energy digital radiography (DR) testing system has generated diverse scientific and technological interest in the field of industrial non-destructive testing. However, due to the limitations of manufacturing technology for accelerators, an energy fluctuation of the X-ray beam exists and leads to bright and dark streak artifacts in the DR image. Here we report the utilization of a new software-based method to correct the fluctuation artifacts. The correction method is performed using a high pass filtering operation to extract the high frequency information that reflects the X-ray beam energy fluctuation, and then subtracting it from the original image. Our experimental results show that this method is able to rule out the artifacts effectively and is readily implemented on a practical scanning system.     

线列光纤传像束对比度传递函数研究

宽视场成像光谱仪采用线列光纤束进行视场折叠以改进其性能.作为一种特殊的光学元件,线列光纤除了具有传像功能外,还具有离散采样特性,这需要采用新方法评价其成像性能.以对比度传递函数的定义为基础,推导出线列光纤束的对比度传递函数解析表达式,据此研究了线列光纤传像束对比度传递函数的特性.结果表明,在极其靠近Nyquist频率及...     

Influence of Ⅴ/Ⅲ ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.     

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes （RTDs） on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance （NDR） region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.     

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

中能重离子微束辐照装置的研制

微束辐照装置是将辐照样品的束斑缩小到微米量级,能够对辐照粒子进行准确定位和精确计数的实验平台,是开展辐照材料学、辐照生物学、辐照生物医学以及微加工的有力工具.中国科学院近代物理研究所(IMP)正在研制中能重离子微柬辐照装置.该装置以兰州重离子加速器(HIRFL)系统提供的中能和低能重离子束流为基础,采用磁聚焦方式形成微米束.束运线上两台铅垂方向的偏转磁铁辅以四极磁铁构成对称消色差系统,将束流导向地下室,再用高梯度的三组合四极透镜强聚焦形成微米束斑,在真空中或大气中辐照样品.它将成为国内首台能够提供从低能(10MeV/u)到中能(100MeV/u)的重离子微束的公共实验平台,用于定位、定量照射靶物质(生物细胞、组织或其它非生物材料等),有助于深入揭示重离子与物质相互作用的本质,也为探索重离子辐照效应的应用提供新的手段.     

激光超声的原理及其在固体中的应用

激光超声是指脉冲激光所产生的脉冲超声。激光超声是较新的产生超声的方法。它的主要特色是，可以遥发遥收，这样就有可能在高温、有危险辐射等恶劣环境下以及在样品运动的生产线上进行超声检测。皮秒级和飞秒级的激光所激发的超声近来又用来研究固体中电子和声子的相互作用。文章介绍了固体中激光超声的声学性能及两种产生机理：热弹机理和电子机理。     

大截面超声变幅杆的近似设计理论

木文研究了大截面圆形变幅杆的设计问题,通过引进变幅杆的等效半径,利用表观弹性法理论,分析了圆锥形、指数形及悬链线形三种常用变幅杆的耦合振动,给出了适用于工程应用的近似设计及计算公式.理论计算及实验表明,利用近似理论计算设计大截面变幅杆,物理意义明显,计算简单,利用计算器便可迅速得出所需数据。与一维理论的计算结果相比,考虑径向振动后所得到的大截面变幅杆的谐振频率更接近于实际测量值,并且设计频率与测量频率之间的误差也完全满足工程上的要求.     

声致生物学效应

本文较全面的介绍了声致生物效应的研究内容，包括超声生物效应，次声生物效应以及噪声生物效应，并综述了近年来这三个方面的研究进展．简要地分析了其作用机理与一些疾病的关系．文章最后阐述了声致生物效应研究的意义．