Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

Effect of Ⅲ/Ⅴ Ratio of HT-AIN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

We investigate the effect of A/N ratio of the high temperature （HT） AIN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AIN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process. Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm^2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.     

Theoretical Analysis of Current Crowding Effect in Metal/AIGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode

There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.     

Growth of Strain Free GaN Layers on （0001） Oriented Sapphire by Using Quasi-Porous GaN Template

We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.     

Facile fabrication of highly flexible,porous PEDOT: PSS/SWCNTs films for thermoelectric applications

High-performance organic composite thermoelectric(TE)materials are considered as a promising alternative for harvesting heat energy.Herein,composite films of poly(3,4-ethyienedioxythiophene):poly(styrene sulfonate)/single-walled carbon nanotubes(PEDOT:PSS/SWCNTs)were fabricated by utilizing a convenient solution mixing method.Thereafter,the as-prepared hybrid films were treated using sulfuric acid(H₂SO₄)to further optimize the TE performance.Film morphological studies revealed that the sulfuric acid treated PEDOT:PSS/SWCNTs composite samples all possessed porous structures.Due to the successful fabrication of highly conductive networks,the porous nano-architecture also exhibited much more excellent TE properties when compared with the dense structure of the pristine samples.For the post-treated sample,a high power factor of 156.43μW·m^-1·K^-2can be achieved by adjusting the content of CNTs,which is approximately 3 orders of magnitude higher than that of the corresponding untreated samples(0.23μW·m^-1·K^-2).Besides,the obtained films also showed excellent mechanical flexibility,owing to the porous nanostructure and the strong p–p interactions between the two components.This work indicates that the H₂SO₄ treatment could be a promising strategy for fabricating highly-flexible and porous PEDOT:PSS/SWCNTs films with high TE performances.     

Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy

This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker films grown on the buffer layer with different polarity by hydride vapour epitaxy technique (HVPE). The surface morphology, structural and optical properties of these HVPE-GaN epilayers are characterized by wet chemical etching, scanning electron microscope, x-ray diffraction, and photoluminescence spectrum respectively. It finds that the N-polarity film is unstable against the higher growth temperature and wet chemical etching, while that of GaN polarity one is stable. The results indicate that the crystalline quality of HVPE-GaN epilayers depends on the polarity of buffer layers.     

GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and characterized by Raman scattering

GaN layers with different polarities have been prepared by radio-frequency molecular beam epitaxy (RF-MBE) and characterized by Raman scattering. Polarity control are realized by controlling Al/N flux ratio during high temperature AlN buffer growth. The Raman results illustrate that the N-polarity GaN films have frequency shifts at $A_{1}$(LO) mode because of their high carrier density; the forbidden $A_{1}$(TO) mode occurs for mixed-polarity GaN films due to the destroyed translation symmetry by inversion domain boundaries (IDBS); Raman spectra for Ga-polarity GaN films show that they have neither frequency shifts mode nor forbidden mode. These results indicate that Ga-polarity GaN films have a better quality, and they are in good agreement with the results obtained from the room temperature Hall mobility. The best values of Ga-polarity GaN films are 1042 cm$^{2}$/Vs with a carrier density of 1.0$\times $10$^{17}$~cm$^{ - 3}$.     

氮(氧)化物荧光粉研究进展

氮氧化物荧光粉材料具有高发光效率、可被可见光有效激发、荧光特性可设计性强、热稳定性高和环境友好等诸多优点,因此成为白光LED用荧光体的重要候选材料.近年来,国际材料学界掀起了稀土掺杂氮氧化物荧光粉的研究热潮,并取得了一系列创新性研究成果.本文综述了各种新型氮氧化物荧光粉的制备方法,重点分析了各类稀土掺杂氮氧化物荧光粉的发光特征及其研究进展,最后探讨了氮氧化物荧光粉的研究发展方向.通过改变稀土掺杂离子周围的晶体场环境实现对荧光体发光性能的裁剪设计、激活离子在荧光体基质材料中所占据结晶位置的确定、高质量红光氮氧化物荧光体的研发等将是氮氧化物荧光体未来研究的主要方向.     

粒子尺寸与表面改性对PPDO/CaCO3复合材料机械性能的影响

选用三种CaCO3粒子[纳米粉料(nano-CaCO3,记为CC1),晶须(CaCO3 wisker,记为CC2)和偶联剂处理的晶须(silane coated CaCO3 wisker,记为CC3)]在有机溶液中与聚对二氧环己酮(PPDO)通过溶液共混制得三种不同的PPDO/CaCO3复合材料——PPDO/CC1,PPDO/CC2和PPDO/CC3.力学性能测试发现,PPDO/CC2的拉伸强度较PPDO大幅提高;但CC3与PPDO的相容性变差,导致PPDO/CC3的力学性能明显下降.