The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA

Ti-doped hydrogenated diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates by a filtered cathodic vacuum arc (FCVA) method using Ar and CH₄ as the feedstock. The composition and microstructure of the films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and IR spectroscopy. The internal stress was determined by the radius of curvature technique. The influence of the bias voltage on the microstructure of the as-deposited films was investigated. It was found that the graphite-like bonds was dominated in the Ti-doped DLC film deposited at 0 V bias voltage. When bias voltage was increased to −150 V, more diamond-like bond were produced and the sp³ content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative bias voltage. The compressive internal in the Ti-doped DLC films also exhibited a maximum value at −150 V bias voltage. IR results indicated that CH bonded intensity reduced, and H atoms bonded with C atoms were substituted for the Ti atoms as the negative bias voltage increasing. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative bias voltage applied to the substrate.     

Transport of waves in disordered waveguides: A potential model

We study the statistical properties of wave transport in a disordered waveguide. We first derive the properties of a “building block” (BB) of length δL starting from a potential model consisting of thin potential slices. We then find a diffusion equation—in the space of transfer matrices that describe our system—which governs the evolution with the length L of the disordered waveguide of the transport properties of interest. The latter depend only on the mean free paths and on no other property of the slice distribution. The universality that arises demonstrates the existence of a generalized central-limit theorem. We have developed a numerical simulation in which the universal statistical properties of the BB found analytically are first implemented numerically, and then the various BBs are combined to construct the full waveguide. The reported results thus obtained are in good agreement with microscopic calculations, for both bulk and surface disorder.     

黄芩的1H NMR指纹图谱研究

利用PFT-NMR 核磁共振波谱仪测定了黄芩提取物的¹H NMR图谱,对黄芩提取物的¹H NMR指纹图谱进行了解析,并与黄芩苷元、千层纸素A、汉黄芩素和黄芩苷进行了比较,获得了黄芩提取物的特征峰,并利用向量夹角法计算了不同指纹图谱的相似度;结果表明不同黄芩提取物的¹H NMR指纹图谱都显示出黄酮类有效成分特征共振峰,并具有很好的重现性和高度的特征性,可以成为黄芩真伪鉴别的依据;不同黄芩的¹H NMR指纹图谱的相似度计算结果定量地评价了不同指纹图谱的相似性.     

A Molecular Analogue of the C−H Activation Intermediate of the Silica-Supported Ga(III) Single-Site Propane Dehydrogenation Catalyst: Structure and XANES Signature

Propane dehydrogenation is an important field of research due to an increasing world-wide demand of propene while classical production routes through naphtha cracking are in decline. In that context, silica-supported Ga(III) sites, synthesized from surface organometallic chemistry principles, show high selectivity and stability in the propane dehydrogenation reaction. This performance is in significant contrast to the reported fast deactivation and lower selectivity of most Ga₂O₃ and CrO₃ based materials. The Ga-catalyzed propane dehydrogenation reaction is proposed to proceed through the formation of Ga alkyl intermediates for which it would be desirable to have detailed structural and spectroscopic information. Here, we prepare a consistent series of Ga(III) molecular complexes with varying numbers of alkyl and siloxide ligands; they are characterized by single crystal X-Ray diffraction and X-Ray Absorption Near Edge Structure analysis, which is known to be highly sensitive to the Ga coordination environment. We report in particular the structure and the spectroscopic signatures of [Ga(ⁱPr)(OSi(O^tBu)₃)₂(HOSi(O^tBu)₃)], a molecular mimic of the key proposed reaction intermediates in the Ga-catalyzed PDH reaction.     

N-Tosylhydrazone as an oxidizing directing group for the redox-neutral access to isoquinolines via Cp1Co(III)-Catalyzed C–H/N–N activation

Herein, an efficient and economic access has been revealed for the synthesis of isoquinolines via C–H bond activation strategy by using comparatively inexpensive and versatile cobalt catalyst. A hardly investigated directing group, N-tosylhydrazone has been effectively applied as an internal oxidant for an annulation reaction with internal alkynes via C–H/N–N bond functionalization. This catalytic protocol works for the extensive variety of substrates in moderate to excellent yields under external oxidant-free conditions. Additionally, the proposed protocol has advantages such as broad substrate coverage with significant product yields, readily synthesized substrates as well as scalability up to the gram quantity which further improves the competency of the methodology.     

超薄骨架有序介孔CdS/NiS的制备及光催化产氢性能

采用有序介孔氧化硅为硬模板, 通过纳米浇筑法制备了由螺旋骨架构建的有序介孔硫化镉(CdS)光 催化材料. 该光催化材料具有约5 nm厚的超薄骨架和大的比表面积(238 m²/g), 能有效缩短光催化反应中 光生电荷迁移到表面进行反应的距离并同时提供更多的反应活性位点, 从而增强光催化性能. 通过原位化学沉积法将不同量的助催化剂硫化镍(NiS)沉积到有序介孔CdS表面, 得到了一系列超薄骨架有序介孔CdS/NiS复合光催化材料. 可见光照射下的光催化产氢活性测试结果表明, 负载适量NiS的有序介孔CdS具有显著增强的光催化产氢活性(3.84 mmol?h^-1?g^-1), 约为负载相同量NiS的普通商业化CdS材料(0.22 mmol?h^-1?g^-1)的17.5倍.     

具有高稳定性以及光催化产氢活性的奇数环状异金属钛氧纳米团簇

利用太阳能是解决当前能源危机和环境问题的有效途径.二氧化钛是一种稳定性高、环境友好的新型光催化剂.近年来,具有精确结构信息的晶态钛氧团簇(PTCs)作为TiO₂的分子结构模型受到广泛关注.目前大多数PTCs含有烷氧基,在空气中易发生水解.这在很大程度上限制了对其光催化性能的研究.在无机钛氧簇的外围修饰大量的共轭有机配体是一种有效提升PTCs稳定性的方法.此外,异金属的嵌入有助于修饰微观电子结构,从而也将影响光催化性能.铝是地球上最丰富的金属元素,其水解产物也大量存在于地壳表面.因此,Ti和Al的水解和光催化研究引起了我们的兴趣.目前,只有少数几例低核的Al掺杂PTCs晶态材料被报道,且其制备过程都需要多步反应.因此,合成高核的包含Al的PTCs材料是一项有趣且充满挑战的工作.本文利用有机配体的保护和异金属离子的掺杂成功地提高了PTCs晶体材料的稳定性.通过研究Ti和Al离子的水解,制备了一例核-壳型的纳米轮簇[Al₇Ti₁₄(μ2-O)₇(μ3-O)₁₄(L)₃₅]·2CH₃CN(1;L=苯甲酸).该轮簇中包含罕见的奇数环状结构,是目前核数最高的包含Al的PTC.借助单晶X射线衍射可以清晰观察到无机{Al₇Ti₁₄}核与有机保护配体之间的配位模式.此外,利用红外光谱、热重和漫反射光谱对该化合物进行了进一步表征.有机配体层和Al³⁺占据了T_i⁴⁺周围的烷氧基位点,使得该化合物呈现较高的空气、热以及酸碱稳定性.在已报道的PTCs晶态材料中,该化合物也展现出较高的光催化产氢速率(402.88μmol g^-1h^-1).借助催化过程中的光致变色现象、电子顺磁共振谱、荧光光谱以及光电流响应,我们推测了该化合物催化水分解产氢机理.该项工作不仅为制备稳定的PTCs材料提供了基础,也为新型光催化剂的设计提供了新的思路.     

限域NiCo合金纳米颗粒高效催化生物质衍生物水相加氢脱氧

将储量丰富的生物质及其衍生物转化为具有高附加值的燃料和化学品被认为是一种有前景的绿色途径,可以极大地减少人们对传统化石资源的依赖.作为木质纤维素热解的直接产物和生物油升级的模型化合物,香草醛可以通过加氢脱氧(HDO)过程选择性地转化为2-甲氧基-4-甲基苯酚(MMP).MMP是一种有价值的化学品,常用于香料和药物等重要中间体的合成.在过去十年里,大量的金属催化剂被用来催化香草醛HDO转化为MMP.其中,贵金属(Pt,Pd,Ru和Au)虽然活性高,但是其储量低、价格昂贵,不利于工业化应用;而非贵金属(Fe,Co,Ni和Cu)的催化活性普遍较低,需要苛刻的反应条件来提高转化效率和选择性.此外,这类HDO反应大都在有机溶剂中进行,容易造成环境污染.因此,开发高效、稳定的非贵金属催化剂用于水相HDO反应是一个巨大的挑战.一般来说,合金纳米颗粒(NPs)具有强烈的协同效应,能产生良好的配位结构和电子环境,从而显著提升催化活性和选择性.基于此,本文首次采用了一种简单可控的合成方法来制备三聚氰胺海绵负载的氮掺杂碳纳米管(N-CNTs)限域的Ni-Co合金NPs(NiCo@N-CNTs/CMF)催化剂.该催化剂具有优异的HDO性能,在2 MPa H2,120oC反应6 h条件下,能在水相中将生物质衍生的香草醛高效转化为MMP,转化率和选择性均达到100％.相比于单金属的Ni@N-CNTs/CMF和Co@N-CNTs/CMF催化剂,香草醛转化率和MMP选择性都有大幅度的提高.而且,在温和的反应条件下,该催化剂对香草醛衍生物和其他芳香醛类化合物同样表现出优异的HDO性能,拥有100％的转化率以及较高的MMP选择性(91.5％～100％).XPS结果表明,Ni-Co形成合金后发生了电子结构的偏移,即Co原子可以从邻近的Ni原子处得到电子,提高Co电子云密度,从而促进对香草醛中C=O键的吸附.DFT计算结果表明,相比于单金属的Ni和Co,Ni-Co合金化后能显著提高对C=O键的选择性吸附和活化.同时,H2解离后形成的活性H*物种在Ni-Co合金NPs表面更容易脱附并参与催化反应.因此,Ni-Co@N-CNTs/CMF催化剂优异的HDO性能主要是由于Ni-Co合金NPs的协同作用大大促进了其对C=O键的选择性吸附和活化,以及活化氢物种的脱附.本文为设计和制备高效的非贵金属催化剂应用于水相的HDO反应提供了一个新策略.     

NiS助催化剂的硫调控光沉积合成及其增强g-C3N4的光催化产氢性能

作为一种非金属聚合半导体,石墨相氮化碳(g-C3N4)具有特殊的能带结构、可见光响应能力以及优良的物理化学性质以及生产成本低等特点,因而已成为目前光催化领域的研究热点.然而,由于g-C3N4被光激发的电子与空穴极易复合,导致g-C3N4材料的光催化性能并不理想.而助剂修饰是实现光生载流子有效分离以提高光催化活性的有效途径.众所周知,贵金属Pt可以作为光催化产氢的反应位点,但高昂的成本限制了它的实际应用.所以,开发高效的非贵金属助剂很有必要.近年来,NiS作为优良的电子助剂在光催化领域受到广泛关注.大量研究表明,NiS可以作为g-C3N4的产氢活性位点用于提高其光催化产氢性能.NiS助剂主要是通过水热、煅烧和液相沉淀的方法修饰在g-C3N4的表面上.相较而言,助剂的光沉积方法具有一些独特的优势,例如节能、环保、简易并且能够实现其原位牢固地沉积在光催化剂的表面.然而g-C3N4光生电子和空穴强还原和氧化能力容易导致像Ni^2+的还原和S^2-的氧化等副反应发生,因此NiS助剂很难光沉积在g-C3N4材料表面.本文采用硫调控的光沉积法成功合成了NiS/g-C3N4光催化材料,该法利用g-C3N4在光照条件下产生的光生电子结合S以及Ni^2+生成NiS,然后原位沉积在g-C3N4表面.由于E0(S/NiS)(0.096 V)比E0(Ni^2+/Ni)(-0.23 V)更正,所以NiS优先原位沉积在g-C3N4表面.因此,硫调控的光沉积法促进了NiS的生成,并抑制了金属Ni等副反应的形成.通过X射线光电子能谱分析NiS/g-C3N4的表面化学态,表明该方法能成功地将NiS修饰在g-C3N4的表面,这也得到透射电镜和高分辨透射电镜结果的证实.光催化产氢的结果表明,NiS/g-C3N4光催化剂实现了良好的光催化性能,其最优产氢速率(244μmol h^?1 g^?1)接近于1 wt%Pt/g-C3N4(316μmol h^?1 g^?1).这是因为硫调控的光沉积法实现NiS助剂在g-C3N4表面的修饰,从而促进光生电子与空穴的有效分离,进而提高光催化制氢效率.此外,在该方法中,NiS的形成通常在g-C3N4光生电子的表面传输位点上,因此也能够使NiS提供更多的活性位点以提高界面产氢催化反应速率.电化学表征结果也进一步证明NiS/g-C3N4光催化剂加快了电子与空穴的分离和转移.更重要的是,这种简易且通用的方法还可以实现CoSx,CuSx,AgSx对g-C3N4的助剂修饰,并且都提高了g-C3N4的光催化产氢性能,表明该方法具有一定的普适性,为高效光催化材料的合成提供了新的思路.     

醋酸铜促进的酰胺-噁唑啉化合物与芳基硫醇的C—H键双硫代化反应研究

以酰胺-噁唑啉为辅助基团,在廉价的醋酸铜促进下,实现了酰胺衍生物C(sp2)—H键与芳基硫醇S—H键的脱氢偶联反应;以中等到优秀的产率(最高可达90%)简单高效地合成了一系列双硫化的酰胺衍生物.值得一提的是,底物范围并不局限于各种取代苯基酰胺化合物,吡啶基酰胺化合物也可以兼容.该反应的特点是:金属廉价、底物范围广、反应条件温和、无需外加配体、空气作为氧化剂、区域选择性好(仅酰胺基团邻位的C—H键发生反应,而噁唑啉基团邻位的C—H键不发生反应);此外,克级规模的反应表明了其在合成中的实用性.