退火a—Ge／Pb叠层膜的扩散机制与电阻率的反常行为

研究了a-Ge/Pb叠层膜不同温度下退火的行为,得到:PB诱导a-Ge晶化;发现a-Ge/Pb叠层膜在退火互扩散过程中存在两种扩散机制;对a-Ge/Pb为200nm/100nm的叠层膜,在退火互扩散中择优取向的Pb膜出现重新结晶。解释了退火过程中叠层膜电阻率的反常行为。     

Study on a Cross Diffusion Parabolic System

This paper considers a kind of strongly coupled cross diffusion parabolic system,which can be usedas the multi-dimensional Lyumkis energy transport model in semiconductor science.The global existence andlarge time behavior are obtained for smooth solution to the initial boundary value problem.When the initialdata are a small perturbation of an isothermal stationary solution,the smooth solution of the problem under theinsulating boundary condition,converges to that stationary solution exponentially fast as time goes to infinity.     

THE LARGE TIME BEHAVIOR OF SPECTRAL APPROXIMATION FOR A CLASS OF PSEUDOPARABOLIC VISCOUS DIFFUSION EQUATION

The asymptotic behavior of the solutions to a class of pseudoparabolic viscous diffusion equation with periodic initial condition is studied by using the spectral method. The semidiscrete Fourier approximate solution of the problem is constructed and the error estiation between spectral approximate solution and exact solution on large time is also obtained. The existence of the approximate attractor AN and the upper semicontinuity d(AN,A)→0 are proved.     

线性复值随机跳跃——扩散方程隐Miltein格式的渐近稳定性

给出了线性复值随机跳跃－扩散方程隐Ｍｉｌｔｅｉｎ格式的渐近均方的必要条件，并揭示了离散步长的稳定区域与格式隐性之间的关系。     

在局部区域上的奇摄动反应扩散方程初始边值问题

本文是讨论一类在局部区域上的奇摄动反应扩散初始边值问题.利用算子理论和 不动点原理,得到了相应问题解的存在性和唯一性.     

非线性时滞反应扩散方程组的奇摄动

本文研究了一类奇摄动非线性时滞反应扩散方程组,利用微分不等式方法,得到了解的一致有效的渐近展开式.     

AN ESTIMATE ON THE DISTRIBUTION AND MOMENTS OF THE LAST EXIT TIME OF AN ELLIPTIC DIFFUSION PROCESS

Let LB be the last exit time from a compact set B of an elliptic diffusion process X. A moderate estimate for the distribution of LB is obtained, and the sufficient and necessary condition for Ex(LBk)<∞is proved.     

Positive Steady States of a Prey-predator Model with Diffusion and Non-monotone Conversion Rate

In this paper, we study the positive steady states of a prey-predator model with diffusion throughout and a non-monotone conversion rate under the homogeneous Dirichlet boundary condition. We obtain some results of the existence and non-existence of positive steady states. The stability and uniqueness of positive steady states are also discussed.     

对流扩散方程带罚函数项的有限体积格式及其分析

1引言 有限体积方法[l]一l’]作为守恒型的离散技术，被广泛应用于工程计算领域.文【2，3} 基于分片常数和分片常向量函数空间，对二维驻定对流扩散方程提出了一类非协调混合 有限体积(Covolume)格式，证明了格式具有。(hl/2)收敛精度.但该格式要求对偶剖分 比较规则，即采用重     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型