第一性原理研究KDP晶体中Ba取代K点缺陷

 用基于第一性原理的CASTEP模拟了Ba替代K缺陷前后形成的电子结构和能态密度。发现晶体能带宽度降至6.4 eV左右,对应着380 nm的双光子吸收,这一结果可以解释掺Ba晶体在紫外波段的吸收现象。Ba替代K点缺陷仅使其周围的晶格及电子结构发生轻微畸变,对晶体整体结构影响不大。     

医用生物材料的低温保存研究

生物材料的低温保存一般都要经历降温过程、低温储存过程及复温过程,其中降温过程中对生物细胞的影响最大.每一种生物细胞都有自己合适的降温速率,如能满足其这种降温速率,细胞所受到的低温损伤最小,则生物细胞的复活率最高.文中介绍程序控制变速降温装置的主要结构及几种典型生物体的降温过程.最后,对器官的低温保存进行分析讨论.     

ALD氧化铝单层膜1 064 nm激光损伤特性研究

 采用原子层沉积技术(atomic layer deposition,ALD)在熔石英和BK7玻璃基底上镀制Al2O3单层膜。利用小口径损伤在线测试平台对膜层的1 064 nm激光损伤特性进行了实验测量,获得膜层损伤阈值约为10.3 J/cm2,对比了其与BK7基底损伤阈值之间的差异;利用Nomarski显微镜和原子力显微镜分析讨论了损伤形态的特点,结果表明损伤主要表现为膜层脱落和基片小孔烧蚀,其中小孔深度集中在70 nm～95 nm范围;讨论了损伤发生的诱因,得出膜基界面可能存在吸收源先驱的推断。     

Structural behaviour of fibre metal laminates subjected to a low velocity impact

Structural impact tests were first presented to cover typical fibre metal laminates (FMLs) subjected a low velocity projectile impact,which produced the corresponding load-displacement traces and deformation/failure modes for the validation of numerical models.Finite element (FE) models were then developed to simulate the impact behaviour of FMLs tested.The aluminium (alloy grade 2024-0) layer was modelled as an isotropic elasto-plastic material up to the on-set of post failure stage,followed by shear failu...     

Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon

High purity n-type silicon single crystal with resistivity in the order of 4000 Ω cm has been irradiated with high-energy oxygen ions at room temperature up to a fluence of 5E15 ions/cm². The energy of the beam was varied from 3 to 140 MeV using a rotating degrader to achieve a depthwise near-uniform implantation profile. Radiation induced defects and their dynamics have been studied using positron annihilation spectroscopy along with isochronal annealing up to 700 °C in steps of 50 °C for 30 min. After annealing the sample at 200 °C for 30 min, formation of silicon tetravacancies has been noticed. The formation of the tetravacancies was found to be due to agglomeration of divacancies present in the irradiated sample. An experimentally obtained positron lifetime value of 338±10 ps has been reported for silicon tetravacancies, which has a very close agreement with the value obtained from recent theoretical calculations. The tetravacancies were found to dissociate into trivacancy clusters upon further annealing. The trivacancies thus obtained were observed to agglomerate beyond 400 °C to form larger defect clusters. Finally, all the defects were found to anneal out after annealing the sample at 650 °C.     

p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究

对一种非加固4007电路中p型金属氧化物半导体场效应晶体管(PMOSFET)在不同剂量率条件下的电离辐射损伤效应及高剂量率辐照后的退火效应进行了研究. 通过测量不同剂量率条件下PMOSFET的亚阈I-V特性曲线,得到阈值电压漂移量随累积剂量、退火时间的变化关系. 实验发现,此种型号的PMOSFET具有低剂量率辐射损伤增强效应. 通过描述H⁺在氧化层中的输运过程,解释了界面态的形成原因,初步探讨了非加固4007电路中PMOSFET低剂量率辐射损伤增强效应模型. 关键词： p型金属氧化物半导体场效应晶体管 60Co γ射线')" href="#">⁶⁰Co γ射线 电离辐射损伤 低剂量率辐射损伤增强效应     

Theoretical and experimental study of laser induced damage on GaAs by nanosecond pulsed irradiation

The surface damage experiments of gallium arsenide (GaAs) single crystal irradiated by 1.06 and 0.53 μm nanosecond irradiations are carried out with fundamental and frequency-doubled Nd:YAG laser, respectively. The surface damage thresholds for both wavelengths are experimentally determined and the damaged morphologies and elementary component are analyzed with electron probe microanalyzer (EPM). It is found that the components of Ga and As almost keep constant in our experiments when the irradiated fluence is just around the surface damage threshold and no oxygen is found at all. The theoretical calculations on temperature rise for both wavelengths are carried out using the purely thermal model. It is shown that for irradiation with photon energy above the corresponding band gap the theoretical calculation is in good agreement with the experimental results; however, for that with photon energy just below the band gap, the experimental results cannot be effectively explained by the purely thermal heating mechanism. Combining with the experiment of multi-shot damage from references we finally conclude that the damage by laser irradiation with photon energy below the band gap should be explained by the micro-defect accumulation and consequently enhanced absorption heating mechanism.     

抑制损伤发展的CO_2激光修复技术及机理研究

熔石英表面激光损伤发展问题一直制约着激光器的运行通量。采用CO2激光在线熔融修复损伤点,修复后形成一个光滑的高斯坑,去除了损伤点中的裂纹,平滑了凹凸不平的表面,并且在紫外脉冲激光作用下,修复斑再次产生损伤的阈值高于熔石英元件的损伤生长阈值。因此CO2熔融修复技术能有效地抑制损伤发展。通过分析CO2激光作用下熔石英表面的温度分布,讨论修复坑的形成过程,确定激光参数对修复效果的影响,为寻找最佳修复参数提供理论基础。同时利用原子力显微镜(AFM)、轮廓仪细致分析损伤点和修复斑的微细结构,采用有限差分时域方法计算损伤点和修复斑周围的光强分布,探索消除裂纹和平滑表面对抑制损伤生长的作用。     

静态存储器型现场可编程门阵列总剂量辐射损伤效应研究

本文从FPGA器件内部最基本的CMOS单元出发,分析了器件功能失效时反相器输出波形随累积剂量的变化关系,进而研究Altera SRAM型FPGA器件⁶⁰Co γ射线辐照后的总剂量辐射损伤效应.实验结果表明:由于场氧漏电和结构漏电的影响,随着累积剂量的增加输出波形发生畸变,峰峰值变为原来的十分之一左右,但输出波形还有相对的高低电平;同时,输出高电平不能保持原有的状态,迅速地向低电平转换,并且转换速度随着累积剂量的增加而加快,输出低电平相对初始值有一定程度抬高;由于栅氧厚度变薄,输出波形 关键词： 60Coγ')" href="#">⁶⁰Coγ 总剂量辐射损伤效应 SRAM型FPGA CMOS单元     

基于时间序列与灰色拓扑的春节火灾损失预测

火灾每年给中国带来了巨大的损失,春节期间的火灾损失更是严重.根据1999-2010年春节期间火灾统计资料,火灾四项指标数据具有时序性以及随机波动性、模糊性.运用时间序列与灰色拓扑预测方法相结合预测春节期间火灾发生规律,且预测出未来3年内的火灾发生情况.结果表明,时间序列预测模型的平均绝对误差较小,且所建立的灰色拓扑预测模型的拟合精度都达到"好"的标准.因此,采用时间序列与灰色拓扑预测模型相结合对春节火灾发生情况进行预测,其结果合理可靠,可供理论研究和消防部门做出相应的预防措施参考,以达到有效控制和预防春节火灾的目的.