Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.     

Influences of high-temperature annealing on atomic layer deposited Al2 O3/4H-SiC

High-temperature annealing of the atomic layer deposition (ALD) of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.     

High-mobility two-dimensional electron gases at oxide interfaces： Origin and opportunities

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas(2DEG)at oxide interfaces.Due to the presence of oxygen vacancies at the SrTiO3surface,metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3has Al,Ti,Zr,or Hf elements at the B sites.Furthermore,relying on interface-stabilized oxygen vacancies,we have created a new type of 2DEG at the heterointerface between SrTiO3and a spinelγ-Al2O3epitaxial film with compatible oxygen ion sublattices.This 2DEG exhibits an electron mobility exceeding 100000 cm2·V 1·s 1,more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces.Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.     

Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method

In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.     

Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.     

基于现场可编程门阵列和大功率LED阵列光源的小型化水下无线光通信系统的研究与实现

针对水下无线通信高速率、远距离、低成本和小型化设备的实用需求,本文设计研制了一种高鲁棒性的基于现场可编程门阵列(FPGA)和大功率LED阵列的小型化水下无线光通信系统。其光发射机的光源采用45 W大功率LED阵列,基于FPGA实现高阶调制与编码,并设计了准直光学发射天线有效减少光束发散角,大幅度延长了传输距离。在光接收端,设计了一种基于3 mm大孔径雪崩光电二极管(APD)的自动增益控制放大和FPGA解调与信号处理的光接收机,降低了光通信系统对准的严苛要求。该系统可实现30 Mbps开关键控(OOK)信号和正交幅度调制(QAM)信号(16QAM信号)的12 m水下信道实时传输,二者的误码率(BER)分别为2.467×10^-4和3.467×10^-3。此外,该系统还实现了22 Mbps的非归零(NRZ)-OOK整形信号12 m水下+30 m空气的跨介质传输(总长度为42 m),BER为3.619×10^-4。最后,实现了12 m水下信道中接收机偏离主光轴40°之内22 Mbps OOK信号的有效接收,提高了系统的鲁棒性。     

基于欧拉壁面液膜模型的管内蒸汽冷凝流动和液膜特性的数值模拟研究

采用ANSYS FLUENT软件建立了基于欧拉壁面液膜模型的光滑管内蒸汽冷凝流动过程的三维数学模型。模拟管长为500 mm,内径为38 mm。模拟工况为入口蒸汽饱和温度分别为70℃,总传热温差为5℃和7℃,入口蒸汽速度为14²0 m/s。模拟结果表明,液膜厚度在管道底部随着流动距离的增加而增加,液膜厚度在管顶部先增大后趋于稳定,更大的蒸汽入口速度产生更高的液膜厚度。液膜流动速度在管道底部随着流动距离的增加而增加,液膜流动速度在管顶部先增大后缓慢降低,更大的蒸汽入口速度产生更高的液膜流动速度。     

粘土悬浮液明渠流的减阻现象

水和粘土悬浮液在水槽中的流动试验证明，在粗糙边界上的粘土悬浮液明渠流阻力明显小于清水流．在同样水力条件下粘土悬液的时均流速比清水流速大得多．当悬液浓度较高时，流动阻力系数比清水流阻力系数的一半还小．实验表明粘土悬液的高粘性和屈服应力抑制了紊动的发展，减小了紊动剪力，导致阻力降低．对于光滑边界湍流，粘土悬液的阻力系数与清水流的相近，不发生减阻现象     

相变气凝胶的设计合成及其微环境调控性能研究

人体微环境调控可以通过材料本身性能的调控实现穿着凉爽舒适,对提高生活品质、减少碳排放具有重要价值.然而传统材料仅能单向地实现致冷或保温,同一材料实现致冷、保温双向功能,依然是本领域重要挑战和值得及时探索的方向.本文采用冷冻-解冻制备水凝胶与冷冻干燥技术,设计合成系列以聚乙烯醇和相变微胶囊为骨架的相变气凝胶.此类相变气凝...     

基于Aerolysin纳米孔道对单个c-di-AMP分子的检测研究

环二腺苷酸(c-di-AMP)是原核细胞中普遍存在的第二信使, 不仅能够有效调控细胞生长、离子转运、细胞壁代谢平衡等多种生理过程, 还能引发I型干扰素应答, 激发机体天然免疫反应. 本实验使用单个气单胞菌溶素(Aerolysin)纳米孔道蛋白构建的单分子界面, 对c-di-AMP进行单分子测量研究. 为提高Aerolysin纳米孔对带负电小分子化合物的测量灵敏度, 本实验利用LiCl为支持电解质, 有效屏蔽Aerolysin孔口表面负电荷, 减小c-di-AMP与Aerolysin纳米孔之间的静电排斥, 从而显著增强了Aerolysin纳米孔道对单个c-di-AMP分子的检测能力. 实验结果显示, 在90 mV电压下, 每分钟在LiCl中获得的有效穿孔事件的数量最高可达同条件KCl支持电解质的30倍, 且有效穿孔事件占总体事件的比例在不同电压下提升了7~11倍. 进一步表明, 使用LiCl支持电解质, 可有效增强Aerolysin孔道对带负电小分子化合物的测量灵敏度. 因此, 本研究实现了Aerolysin纳米孔道对单个环二核苷酸的高灵敏免标记检测, 有望为单分子水平上阐明新型免疫干扰机制提供新的分析方法.