| High-mobility two-dimensional electron gases at oxide interfaces： Origin and opportunities |
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| 引用本文： | 陈允忠,Nini Pryds,孙继荣,沈保根,SФren Linderotha.High-mobility two-dimensional electron gases at oxide interfaces： Origin and opportunities[J].中国物理 B,2013(11):1-11. |
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| 作者姓名： | 陈允忠 Nini Pryds 孙继荣 沈保根 SФren Linderotha |
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| 基金项目： | The authors wish to express their thanks for the collabo-rations and discussion with A. J. H. M. Rijnders, G. Koster, J. E. Klcibeukcr, E Trier, D. V. Christensen, N. Bovet, N. H. An-dersen, T. Kasama, W. Zhang, L. Lu, E M. Qu, R. Giraud, J. Dutouleur, B. Buchner, T. S. Jespersen, J. Nyg~trd, E. Stamate, S. Amoruso, J. Fleig, E W. Poulsen, and N. Bonanos. |
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| 摘 要： | Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas(2DEG)at oxide interfaces.Due to the presence of oxygen vacancies at the SrTiO3surface,metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3has Al,Ti,Zr,or Hf elements at the B sites.Furthermore,relying on interface-stabilized oxygen vacancies,we have created a new type of 2DEG at the heterointerface between SrTiO3and a spinelγ-Al2O3epitaxial film with compatible oxygen ion sublattices.This 2DEG exhibits an electron mobility exceeding 100000 cm2·V 1·s 1,more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces.Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
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| 关 键 词： | 复合氧化物 异质结界面 二维电子气 电子气体 高流动性 控制接口 起源 氧化还原反应 |
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