Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.     

电致发光色纯性增强的硅基有机微腔

报道了硅基有机微腔的电致发光（EL）.该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜（PS DBR）组成.半透明金属膜由Ag（２０nm）构成，充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成，其中的Al/LiF为电子注入层，ITO为正电极，SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的；该PS 关键词： 电化学腐蚀 电致发光 窄峰发射 硅基有机微腔     

新型菲涅尔线聚光太阳电池组件特性分析

以PMMA为材料,采用热压成型工艺加工线聚焦菲涅尔聚光棱镜,对在其聚光条件下不同入射角度情况下太阳电池的电流电压特性进行测试,结果表明:该菲涅尔线聚焦棱镜能有效提高太阳电池的单位输出功率,而且具有比较宽泛的集光角的特性,基本满足实际应用的要求.     

Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.     

步进扫描时间分辨光谱及其在太阳电池光电导上的应用

建立傅里叶变换步进扫描时间分辨光电导光谱，并研究太阳电池中与转换效率密切相关的少数载流子寿命.实验选取三种典型的硅太阳电池(单晶硅样品1、多晶硅样品2和多晶硅样品3 )，发现其瞬态光电导的上升和衰退曲线可以分别用两个简单的指数函数描述.由于有复合中心的参与，复合过程中少数载流子的寿命比产生过程中的寿命短.为验证实验结果的可靠性，采用了提取样品少数载流子的体寿命和计算其有效扩散长度两种方法.通过与太阳电池暗伏安特性和负载特性研究相结合，进一步分析和讨论了少数载流子寿命与短路电流、开路电压和转换效率的关系.同时探讨了步进扫描时间分辨光谱实验的其他用途. 关键词： 步进扫描 时间分辨 硅太阳电池 瞬态光电导     

硅光电二极管激光损伤阈值随激光脉宽的变化

 对飞秒激光辐照下硅光电二极管损伤阈值进行了实验测量，对从1s到60fs不同脉宽激光辐照下硅光电二极管损伤阈值进行了讨论。实验数据表明，在1s到10ns脉宽范围内损伤所需能量密度近似而非严格地与脉宽的平方根成正比。信号分析表明硅光电二极管的损伤主要由热效应造成，而60fs激光辐照下的损伤阈值为0.1J/cm2，明显偏离普通温度分布预言的趋势。     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

纳米硅量子线的发现与研究

一维纳米材料是当今介观物理学研究的前沿领域．文章报道了一种利用脉冲激光成功地制备纯度高、直径分布均匀的纳米硅量子线（ＳｉＮＷｓ）的方法，介绍了纳米量子线的形貌、显微结构、生长机理和物理性能研究的最新结果．纳米硅量子线的发现具有重要的科学意义和潜在的应用前景．