Deposition of Ni, Ag, and Pt-based Al-doped ZnO double films for the transparent conductive electrodes by RF magnetron sputtering

Ni, Ag, and Pt-based Al-doped ZnO (AZO) films have been deposited as transparent conductivity layers on quartz by RF magnetron sputtering and characterized by X-ray diffraction, Hall measurement, optical transmission spectroscopy, scanning electron microscopy (SEM). The deposition of thicker metal layer in double layers resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. A film consisting of AZO (250 nm)/Ni (2 nm) double structure, exhibits a sheet resistance of 21.0 Ω/sq, a high transmittance of 76.5%, and characterize good adhesion to substrate. These results make the satisfactory for GaN-based light-emitting diodes (LEDs) and solar cells with metal-based AZO double films as current spread layers.     

放射性核素铀在针铁矿中的占位研究

用第一性原理研究放射性同位素铀在针铁矿(α-FeOOH)中的占位情况, 分别考虑铀原子替代针铁矿中的铁的替位缺陷和铀的多种八面体和多种四面体间隙缺陷. 计算发现了三个最稳定的缺陷构型, 它们分别对应于一个铀替位缺陷(S) 及其中的一个铀的八面体(O)和四面体(T)间隙缺陷, 其形成能分别为-13.49, -3.86, -1.60 eV. 也研究了两个相邻的铀原子在针铁矿中的占位情况, 发现双铀原子很容易掺入到相邻的SS或OS位, 它们的形成能分别为-27.392和-16.214 eV, 结合能分别为-0.417和1.131 eV. 表明双原子铀在针铁矿中会以SS形式发生偏聚而较难以OS形式偏聚. 关键词： 铀 针铁矿 占位 第一性原理     

锂离子正极材料LiCo1-xMgxMnO4与LiCo1-xAlxMnO4 (x = 0, 0.02, 0.05, 0.1)的制备及其电化学性能

采用固相法合成掺杂镁和铝尖晶石LiCoMnO₄材料,研究镁和铝掺杂量对尖晶石LiCoMnO₄电极的初始容量、放电平台以及循环性能的影响. 利用扫描电子显微镜、粉末X-射线衍射仪观察分析材料形貌及结构. 结果表明,所合成材料的粒径分布均匀,结晶性较佳. LiCoMnO₄电极初始容量为87.0 mAh.g^-1,少量镁或铝掺杂使电极初始容量有所增加,LiCo_0.98Mg_0.02MnO₄和LiCo_0.98Al_0.02MnO₄电极初始容量分别为91.3和93.6 mAh.g^-1,提高了其5 V放电平台的比例,过量掺杂则其容量降低. 此外,掺杂Al显著改善了LiCoMnO₄电极的循环性能,而掺杂镁对电极的循环性能其影响不明显.     

针铁矿对焦磷酸根的吸附特征及吸附机制

为深入了解自然水体中焦磷酸盐的迁移转化行为,以表生环境中广泛存在的稳定矿物-针铁矿为研究对象,系统研究了其对焦磷酸根的吸附过程,探索了不同实验条件下(pH值、电解质、时间、温度)针铁矿对焦磷酸根吸附的影响。 结果表明,溶液pH值从6.27升至10.99时,总磷吸附量从3.00 mg/g降低至0.75 mg/g;电解质浓度越低越有利于针铁矿对焦磷酸根的吸附;吸附剂对焦磷酸根的吸附量在最初1 h内增长较快,随后渐渐达到吸附平衡;溶液温度的升高对吸附量提高具有增强作用。 用动力学和热力学模型对吸附过程进行拟合,发现准二级动力学和Langmuir模型具有更好的适用性。 结合材料吸附焦磷酸根前后的表征,推导出针铁矿对焦磷酸根的吸附机制可能是以表面配合和物理吸附为主导。     

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods

Three-dimensional （3D） nanostructures in thin film solar cells have attracted significant attention due to their appli- cations in enhancing light trapping. Enhanced light trapping can result in more effective absorption in solar cells, thus leading to higher short-circuit current density and conversion efficiency. We develop randomly distributed and modified ZnO nanorods, which are designed and fabricated by the following processes： the deposition of a ZnO seed layer on sub- strate with sputtering, the wet chemical etching of the seed layer to form isolated islands for nanorod growth, the chemical bath deposition of the ZnO nanorods, and the sputtering deposition of a thin Al-doped ZnO （ZnO：Al） layer to improve the ZnO/Si interface. Solar cells employing the modified ZnO nanorod substrate show a considerable increase in solar energy conversion efficiency.     

pH值对溶胶-凝胶法制备的掺铝氧化锌薄膜光电性能的影响

采用溶胶-凝胶法在普通载玻片上制备出c轴择优取向的ZnO: Al(ZAO)透明导电薄膜,研究了溶胶pH值对其结构、表面形貌、电学和光学性能的影响.结果表明:随着pH值的降低晶粒尺寸增大;当溶胶pH值从8.4降低到6.8时,薄膜的电阻率先降低而后略有升高,当pH值为7.2时其电阻率达到最小值2.6×10-3 Ω·cm,进一步分析表明,溶胶pH值的变化影响了薄膜晶界散射,而后者又使载流子迁移率发生了变化;薄膜的透光率在可见光部分随着pH值的降低而升高,而禁带宽度则从3.36 eV降到3.32 eV.     

Mg1-xAlxB2-yCy的结构与超导电性

本文利用固相反应法制备了一系列Mg1-xAlxB2-yCy样品．X射线粉末衍射结果表明，铝的掺入使其晶格常数减小，但层间晶格常数c变化明显而层内晶格常数α基本不变．当铝的掺杂量为0．25时，样品的超导转变温度随着碳的掺入量的增加而呈现增大趋势．这种现象可能是由于同时掺杂引起样品内部载流子浓度的变化或微观结构变化引起的．     

Damp heat and thermal cycling-induced degradation mechanism of AZO and CIGS films in Cu(In,Ga)Se2 photovoltaic modules

This paper characterizes and compares the degradation mechanisms of Cu(In,Ga)Se₂ (CIGS)-based thin film photovoltaic (PV) modules during exposure to damp heat (85 °C/85% RH) for 1000 h and thermal cycling (−40 °C/85 °C) for 1000 cycles. After damp heat (DH) exposure, the efficiency of the PV modules was reduced from the initial value of ∼12.5 ± 0.1% to 10.5 ± 0.2% due to increase of the resistivity in the AZO and CIGS layers. The optical band gap was also decreased from the initial value of 3.60 eV–3.54 eV after 1000-h DH exposure. This behavior was associated with oxygen adsorption and the generation of hydroxides in the AZO layer. The efficiency of the PV modules after subjection to thermal cycling (TC) was decreased to 11.4 ± 0.2% due to increase of the resistivity of the AZO and CIGS layers. The increase in the resistivity was interpreted as being due to oxygen adsorption, as well as the formation of micro-cracks in the AZO films.