─族亚纯函数的正规定则

本文讨论亚纯函数族的正规性，推广并改进了杨乐￣［２，３］，陈怀惠￣［５］和朱秀蓉，龚向宏￣［７］等人的结果。     

[VS_4Cu_6(Py)_8I_3]的合成和晶体结构

在(NH4)3VS4/CuI/Py反应体系中合成了新化合物 [VS4Cu6(Py)8I3]并测定其晶体结构。该化合物(C40H40N8Cu6I3S4V)属正交晶系, 空间群为Fdd2, 晶胞参数为: a = 29.924(6), b = 13.475(3), c = 25.853(5) , V = 10425(4) ?, Dc = 2.006 g/cm3, Mr = 1573.92, Z = 8, (MoK) = 4.546 mm-1, F(000) = 6048。结构由直接法解出, 用全矩阵最小二乘法修正, 最终偏离因子R = 0.023, wR = 0.069。簇合物分子是由6个带端基配体的Cu沿着四面体单元VS4的6条SS边配位而成, 6个Cu排列成了1个八面体, V基本位于八面体的中心, 整个分子具有C2对称性。     

全纯函数族的正规定则

Let f be a holomorphic function on a domain D Lontaiu in C, and let a be a finite complex number. We denote by -↑Ef/(a) = {z ∈ D : f(z) = a, ignoring multiplicity} the set of all distinct α-points of f. Let F be a family of holomorphic functions on D. If there exist three finite values a, b(≠ O,α) and c(≠ O) such that for every f ∈F, -↑Ef′/(0) Lontain in -↑Ef(α） and -↑Ef′ (b) Lontain in -↑Ef(c), then F is a normal family on D.     

关于开紧映射与Arhangel’skiǐ的问题

首先构造一T_2的亚紧空间使其不是任一仿紧T_2空间的开紧映象,否定了A．Arhangel'skiǐ1962年提出的一个问题；其次利用构造开紧映射的方法指出存在具有G_δ对角线的T_2的次亚紧空间使其不具有G_δ~*对角线,肯定地回答了1999年R．Hodel提出的一个猜测．     

单级A/O程序HSMBR系统性能和亚硝酸型SND

采用单级A/O程序复合膜生物反应器(HSMBR)处理高氨氮废水,研究了在低DO浓度下系统对有机物、氨氮和总氮的去除效率.研究结果表明:在低DO浓度下,COD,氨氮的平均去除率分别为94.4%和92.8%.由于进水COD/TN比仅为2.01,则使得总氮平均去除率仅为69.4%,但是当系统亚硝化累积率从60.5%～67.1%提高到83.5%～86.4%时,系统总氮去除率提高了17.7%.另外,DO在0.5～1.0 mg·L-1时,TN去除率为69.4%,亚硝酸盐氮累积率在60.5%～89.5%之间,可见维持低DO浓度可以实现亚硝酸型同时硝化反硝化.     

Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.     

微脉冲电子枪的初步实验研究

给出了微脉冲电子枪的模拟计算及其初步实验结果. 该电子枪采用铜铝镁合金作为冷阴极材料, 在以磁控管作为微波功率源的出束实验中得到了100mA/cm²的电流密度.实验结果与次级电子倍增解析计算和SEEG程序的模拟计算结果基本符合, 初步验证了微脉冲电子枪的基本原理, 为今后实验中得到更大的电流密度打下了基础.