硅一体化薄膜微电极器件及其应用

提出用发展中的硅微机械加工技术设计制作硅一体化薄膜微电极器件．这类微电化学器件具有微电极所特有的全部优点，而且由于结构上的一体化，便于器件整体的微型化和集成化．试用薄膜微电极器件电流法常温直接检测ＣＯ２气体，取得了满意的结果。设想通过器件三维构型设计的改进和完善，器件工作的长期稳定性可望进一步提高．     

测定异常散射因数的强度比法

本文对测定异常散射因数的强度比法做了考察,并用这种方法较好地测定了GaAs中Ga原子在其K吸收限附近的异常散射因数,对该方法在使用中遇到的问题,进行了处理和讨论。 关键词：     

有理同时Chebyshev逼近的一致强唯一性

本文研究了广义有理同时 Chebyshev 逼近的一致强唯一性.首先,我们举例说明经典的 Chebyshev 逼近的结果不能直接推广到同时 Chebyshev 逼近情形,其次给出了使 inf_(F∈Γ)γ(F)>0的充分条件.其中γ(F)是 F 的广义有理同时 Chebyshev 逼近的强唯一常数.最后,我们研究了所给条件的必要性.     

Photocatalytic Synthesis of Oxygenates from Gaseous CO2 and CH4 over Semiconductor

Photoinduced synthesis of CO2 and CH4 was investigated using a batch reaction system on several photoactive materials supported on silicon dioxide. Single semiconductor showed higher selectivity to C1 compounds. The production of C2-C3 oxygenates took place preferentially on composite semiconductor photocatalysts. In particular, it was found that acetone was the primary product over Cu/CdS-TiO2/SiO2.     

e+e-实验中ψ(2S)能区连续态单光子湮没过程的贡献

研究了e+e-实验中ψ(2S)能区连续态单光子湮没过程的截面对观测总截面的贡献. 针对ψ(2S)质量处ωπ0和π+π-两个观测末态,利用唯象模型估计了单光子湮没过程贡献的大小. 分析表明,对于ψ(2S)→ωπ0和ψ(2S)→π+π-,以及其他电磁末态分支比的确定,单光子湮没过程的贡献必须认真考虑. 通过研究,我们认为对于BES实验来说,为了获得共振态电磁末态分支比的正确结果,至少需要在低于ψ(2S)共振峰的能量点采集10pb-1的数据.     

Defect Structures in 4H-SiC Irradiated with Highly-energetic ^20Ne^4＋ and ^120Xe^26＋ Ions

The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of our     

光双二进制传输系统的性能研究

光双二进制信号的谱宽是传统二进制信号的一半,采用双二进制传输比二进制传输色散限制的中继距离可增加一倍.本文对采用传统光接收机的光双二进制传输系统用MATLAB进行了通信仿真.结果表明:在完全消光条件下,10 Gb/s双二进制信号在常规单模光纤上传输可达160 km,40 Gb/s双二进制信号在非零色散光纤上为30 km,均比二进制增加了一倍;详细考察了消光比对传输的影响,只有消光比大于25 dB时,双二进制相对于二进制传输的优越性才呈现出来.     

Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.     

工艺参数对铀表面铝镀层热应力分布影响

为了防止铀的腐蚀，采用在铀表面磁控溅射镀铝，但使用中发现铝镀层内产生了较大的应力，影响镀层结合强度及使用性能。通常认为，薄膜内的应力有热应力和生长应力两种。文中通过改变沉积温度、镀层厚度以及镀层力学性能分数，研究它们对镀层热应力分布的影响，从而为改善铀表面铝镀层内热应力分布提供理论依据。