| Defect Structures in 4H-SiC Irradiated with Highly-energetic ^20Ne^4＋ and ^120Xe^26＋ Ions |
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| 作者姓名： | ZhangChonghong SunYoumei T.Shibayama LiuJie WangZhiguang SongYin DuanJinglai ZhaoZhiming YaoCunfeng WangYing HouMingdong JinYunfan |
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| 作者单位： | [1]不详 [2]CenterforAdvancedResearchofEnergyTechnology,HokkaidoUniversity,Sapporo,Japan. |
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| 摘 要： | The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of our
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| 关 键 词： | 缺陷结构 放射性 高能离子 碳硅化合物 熔化作用 |
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