哈密顿算符的对角化与能量本征值问题的代数解法

提出了将哈密顿算符对角化的一种方法.围绕一维谐振子讨论了如何将哈密顿算符对角化、引进的是玻色算符还是费米算符的问题,并分析了能量量子化的原因及能量子与声子的区别.     

脉冲磁场处理对碳纳米管掺杂MgB2线材临界电流密度的影响

对碳纳米管(CNT)掺杂MgB₂超导体磁场处理后的行为进行了研究. 结果表明，CNT掺杂MgB₂超导体经5T脉冲磁场处理后临界电流密度J_c(H)在低磁场下提高了2—3倍，高场下提高一个数量级以上，扫描电镜结果显示CNT沿着处理磁场方向规则排列并且成为MgB₂基体的形核中心和高效的磁通钉扎中心. 关键词： 2')" href="#">MgB₂ 碳纳米管 脉冲磁场处理     

Surface rumpling of cubic CaTiO3 from density functional theory

In this paper, the structure of cubic CaTiO3 （001） surfaces with CaO and TiO2 terminations has been studied from density functional calculations. It has been found that the Ca atom has the largest relaxation for both kinds of terminations, and the rumpling of the CaO-terminated surface is much larger than that of TiO2-terminated surface. Also we have found that the metal atom relaxes much more prominently than the O atom does in each layer. The CaO-terminated surface is slightly more energetically favourahle than the TiO2-terminated surface from the analysis of the calculated surface energy.     

贫燃料预混燃烧的回火特性研究

回火问题是贫燃料预混燃烧面临的主要问题之一。本文采用计算和实验相结合的方法研究甲烷与富氢合成气贫预混燃烧的回火现象,得到不同燃料、不同稳定方式之间的回火特性。研究结果表明,回火极限可以关联为丕雷数模型,环形稳定器的回火稳定性最好,其次为杆稳定器,旋流稳定器的稳定性最差;环形稳定的甲烷预混火焰的回火过程为边缘稳定,适当加入边缘空气同轴射流后变为中心回火,且同轴射流速度存在最佳范围可以提高回火稳定性。     

晶体学与准晶体学点群的母子群关系

依据群论，得出了准晶体学点群的直积或半直积推导算式；依据结晶学理论，绘出了五角、八角、十角和十二角晶系各点群的极赤投影图.据此推导出了每一个准晶体学点群的全部最大子群，从而推导并绘制出了三维晶体学和准晶体学点群之间的母子群关系(60个点群的“家谱”).该“家谱”以最大子群链的图解形式直观地给出了每个点群的最小母群和最大子群. 关键词： 准晶体 晶体 点群 最大子群 最小母群 群链     

基于扩散势能和自由体积的自扩散系数模型

在考虑自由体积和局部临界扩散势能的基础上,提出一种新的计算自扩散系数模型,并给出新模型中各个因子物理含义．同时还提出一种计算局部临界扩散势能的新方法,并应用于新模型．另外将衍生van der Waals状态方程应用于求解自由体积,式中所需径向分布函数由Morsali-Goharshadi方程得到．在相同条件下,新模型比原自由体积模型更准确．     

Preparation and Mechanical Properties of Fe3Al Nanostructured Intermetallics

Nanostructured Fe₃Al intermetallic compounds were produced by using hydrogen arc plasma method. The transmission electron microscopy experiments showed that the average particle size of the as-synthesized was about 40-nm. The change in hardness of Fe₃Al nanostructured intermetallic compounds with annealing temperatures was observed and evaluated.     

纳米晶ZrO2:Er3+-Yb3+的制备及其室温上转换发射

用化学共沉淀法制备了ZrO₂:Er³⁺-Yb³⁺纳米晶粉体，所制备的纳米晶粉体具有较强的室温上转换发射和红外发射.研究了样品的晶体结构和上转换发光性质随着Yb³⁺掺杂浓度和煅烧温度的变化关系.通过X射线衍射谱分析发现，经800℃煅烧2h后得到的ZrO₂:Er³⁺-Yb³⁺纳米晶是四方相和单斜相的混合结构，经950℃煅烧2h后得到的样品以单斜相为主，随着Y     

Entangling Two Multi-atomic Clusters Through a Cavity Field

Two atomic clusters, which have NA and Ns two-level atoms, respectively, are placed in a cavity but separated spatially. There is no direct interaction between the atoms. All the atoms interact with a single-mode of the cavity field. Quantum entanglement between the two atomic clusters is investigated for various initial states of the two atomic clusters and the field. When the cavity field is initially in a Fock state, we find that the time evolution of entanglement quasi-periodically oscillates regardless of the initial states of atoms. The oscillation period increases as the initial photon number increases. When all the atoms in both of the atomic clusters are initially in the excited state, we show that there is no entanglement between the atomic clusters with NA = NB = 1 regardless the initial state of the cavity field. However, when either NA or NB is larger than one, we find that the entanglement always exists even for a strong thermal field. In cases with different initial states of the atomic clusters, we notice that the entanglement becomes stronger as number of the atoms increases. When all the atoms in both of the clusters in the ground state, we also find that the entanglement can be enhanced even by a thermal field. We also notice that a single qubit can be entangled with multi-atoms which are initially in the ground state by the cavity field initially being in vacuum, thermal, coherent, and squeezed states.     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器