亮暗屏蔽光伏孤子在LiNbO3晶体中的大自偏转

用数值方法证实了亮、暗屏蔽光伏孤子在有外加电场的LiNbO3晶体中都可以发生大自偏转,并验证了这种自偏转现象不但与晶体中受主浓度NA有关而且还与外加电场E0有关.在E0相同的条件下,NA越小这种自偏转现象越明显,在NA相同的条件下,风越大自偏转现象越明显.还发现亮、暗屏蔽光伏孤子的自偏转现象不同:亮屏蔽光伏孤子整体都发生明显偏转,暗屏蔽光伏孤子的偏转只是发生在一侧,其极值位置和另一侧几乎不发生偏转.     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.     

MOS结构电离辐射效应模型研究

基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更 关键词： MOS结构 辐射 界面陷阱 氧化层陷阱     

中英化学教材“化学反应速率”内容比较研究

“化学反应速率”综合体现了微粒观、实验观及科学本质观等化学基本观念,是提高学生科学素养的重要载体。从内容选取、内容编排与内容呈现3个方面对英国索尔特高级化学课程教材与国内化学教材中“化学反应速率”相关内容的编写进行比较,并简要阐述几点对化学教材编写和化学教学的启示。     

A new model for electromigration grain boundary noise based on free volume

Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a 'vacancy--ion complex' as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter-grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively.     

Precise Supramolecular Polymerization of Liquid Crystalline Block Copolymer Initiated by Heavy Metallic Salts

Chinese Journal of Polymer Science - Heavy metallic salts are capable to bind with proteins and cause detrimental fibrilization in living cells. Herein, we report a similar case of supramolecular...     

金属薄膜电迁移1/f噪声与1/f2噪声统一模型

应用晶粒边界自由体积的概念建立了能够统一描述金属薄膜1f噪声与1f2噪声的模型.该模型表明,结构完整的多晶金属薄膜产生的电噪声为1f噪声,当金属薄膜受到电迁移损伤而形成空洞时就会引入1f2噪声的成分.在电迁移应力实验中,观察到金属薄膜1fγ噪声在空洞成核前γ约为10,一旦发生空洞成核,即突增至16以上,这一规律与本模型的预测相符合 关键词： 金属薄膜 1fγ噪声 电迁移 自由体积     

应变Si NMOSFET漏电流解析模型

基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型. 该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题. 同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度. 通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性. 该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考. 关键词： 应变Si NMOSFET 漏电流 解析模型     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal–oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型

为抑制短沟道效应和热载流子效应, 提出了一种非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET新结构. 通过在圆柱坐标系中精确求解三段连续的泊松方程, 推导出新结构的沟道静电势、阈值电压以及亚阈值电流的解析模型. 结果表明, 新结构可有效抑制短沟道效应和热载流子效应, 并具有较小的关态电流. 此外, 分析还表明栅交叠区的掺杂浓度对器件的亚阈值电流几乎没有影响, 而栅电极功函数对亚阈值电流的影响较大. 解析模型结果和三维数值仿真工具ISE所得结果高度符合.