高速微晶硅薄膜沉积过程中的等离子体稳态研究

通过光发射光谱监测高速沉积微晶硅薄膜过程中I(H_α^*)/I(SiH^*) 随沉积时间的变化趋势, 分析高速率微晶硅薄膜纵向晶化率逐渐增大的原因. 通过氢稀释梯度法, 即硅烷浓度梯度和氢气流量梯度法来改善材料的纵向均匀性.结果表明: 硅烷浓度梯度法获得的材料晶化率从沉积300 s时的53%增加到沉积600 s时的62%, 相比于传统方式下纵向晶化率从55%到75%的变化有了明显的改善. 在硅烷耗尽的情况下, 增加氢气流量一方面增加了气体总流量, 使得电子碰撞概率增加, 电子温度降低, 从而降低氢气的分解, 抑制SiH_x基团的放氢反应, 同时背扩散现象也得到了一定的缓解, 使得I(H_α^*)/I(SiH^*) 在沉积过程中逐渐增加的趋势有所抑制, 所制备的材料的纵向晶化率在240 s 后维持在53%-60%范围内, 同样改善了薄膜的纵向结构. 关键词： 光发射光谱 高速沉积 微晶硅 纵向结构均匀性     

衬底温度对反应磁控溅射W掺杂ZnO薄膜的微观结构及光电性能的影响

采用直流脉冲反应磁控溅射方法生长W掺杂ZnO（WZO）透明导电氧化物薄膜并研究了衬底温度对薄膜微观结构、组分、表面形貌以及光电性能的影响.实验结果表明,WZO薄膜具有良好的（002）晶面择优取向,且适当的衬底温度是制备优质WZO薄膜的关键因素.随着衬底温度升高,薄膜表面粗糙度先增大后减小;衬底温度较高时,薄膜的结构致密,结晶质量好,电子迁移率高.当衬底温度为325℃时,WZO薄膜获得最低电阻率9.25×10^-3Ω·cm,方块电阻为56.24Ω/□,迁移率为11.8 cm² V^-1·s^-1,其在可见光及近红外区域（400—1500 nm）范围的平均透过率达到85.7%.     

流动注射-化学发光法测定盐酸罂粟碱注射液中的盐酸罂粟碱

碱性介质中,盐酸罂粟碱对鲁米诺-铁氰化钾化学发光体系有显著的增强作用,且在一定范围内,盐酸罂粟碱的浓度与化学发光强度成正比。基于此,建立了流动注射-化学发光法测定盐酸罂粟碱注射液中盐酸罂粟碱的方法,并研究了影响化学发光强度的因素。在最优条件下,测得检出限为1.7μg/mL,线性范围为5.0-200.0μg/mL(r=0.9990),平均回收率为101.3%。该方法已用于盐酸罂粟碱注射液的测定,结果准确可靠。     

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Indium doped zinc oxide(ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate.1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated.The 1 at.% indium doped single-layers have triangle grains.The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10-3Ω·cm and particle grains.The doublelayers structure is designed to fabricate the ZnO:In thin film with low resistivity(2.58×10-3Ω·cm) and good surface morphology.It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substratelayer,and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film.Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region.Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.     

三种五元化合物的荧光光谱的量子化学研究

采用密度泛函理论(DFT)中的B3LYP方法,在6-31G^*水平上对三种五元杂环物质进行了构型优化,对优化后的构型做振动分析,均未出现虚频率。在此基础上通过轨道分析,探索了分子内部电子跃迁的机理。结果表明,这三种五元化合物HOMO到LUMO的跃迁是电子从C1、C2、C3和C4转移到杂原子(吡咯中的N原子,呋喃中的O原子和噻吩中的S原子)上,并在6-31G^*水平上用单激发组态相互作用(CIS)方法分别计算了三种物质的荧光光谱,所得计算结果与实验值基本符合。     

铝改性赤泥吸附剂的制备及其除氟效能的研究

以铝工业废矿渣为原材料,通过铝盐改性及焙烧活化处理,制备了水中除氟吸附剂。研究考察了吸附剂吸附氟能力、反应时间、pH值以及投加量对吸附效果的影响。结果表明,铝改性赤泥吸附剂具有较好的除氟效果,未焙烧铝改性赤泥吸附剂及经过200 ℃焙烧活化赤泥吸附剂的饱和吸附量分别达到68.07和91.28 mg·g^-1,远高于原状赤泥的饱和吸附量13.46 mg·g^-1。经吸附后出水氟含量低于1 mg·L^-1的国家饮用水标准。吸附规律符合Langmuir等温方程,溶液pH值显著影响除氟效果,在溶液pH值为7~8时达到最佳去除效果。     

氨水浓度对化学水浴法制备CdS缓冲层及CZTSe电池性能的影响

主要研究了化学水浴法沉积CdS薄膜中氨水浓度对薄膜材料特性的影响.通过X射线衍射(XRD)、扫描电子显微镜(SEM)和分光光度计(UV-Vis)等测试手段对制备的CdS薄膜的结构和光学特性进行了分析.结果表明:不同的氨水浓度条件下均得到立方相CdS薄膜,薄膜沿(111)面择优取向生长.随着氨水浓度增加时CdS薄膜表面逐渐变得致密光滑,CdS薄膜的透过率增强和带隙变宽.在氨水浓度为0.10 mol/L时制备出材料特性最佳的CdS薄膜,其表面紧凑致密无针孔,颗粒大小均匀,将其应用于CZTSe薄膜太阳电池中的缓冲层材料,得到光电转化效率为3.12;的CZTSe薄膜太阳电池(该电池未经任何后硒化处理工艺).     

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied.It includes the discharge time-accumulating heating effect,discharge power,inter-electrode distance,and total gas flow rate induced heating effect.It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other.However,all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films,which will affect the properties of the materials with increasing time.This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed.Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon,it is proposed that the discharge power and the heating temperature should be as low as possible,and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.     

钙钛矿/硅叠层太阳电池中平面a-Si:H/c-Si异质结底电池的钝化优化及性能提高

最近,旋涂法制备的钙钛矿/平面硅异质结高效叠层太阳电池引起人们广泛关注,主要原因是相比于绒面硅衬底制备的钙钛矿/硅叠层太阳电池,其制备工艺简单、制备成本低且效率高.对于平面a-Si:H/c-Si异质结电池, a-Si:H/c-Si界面的良好钝化是获得高转换效率的关键,进而决定了钙钛矿/硅异质结叠层太阳电池的性能.本文主要从硅片表面处理、a-Si:H钝化层和P型发射极等方面展开研究,通过对硅片表面的氢氟酸(HF)浸泡时间和氢等离子体预处理气体流量、a-Si:H钝化层沉积参数、钝化层与P型发射极(I/P)界面富氢等离子体处理的综合调控,获得了相应的优化工艺参数.对比研究了p-a-Si:H和p-nc-Si:H两种缓冲层材料对I/P界面的影响,其中高电导、宽带隙的p-nc-Si:H缓冲层既能够降低I/P界面的缺陷态,又可以增强P型发射层的暗电导率,提高了前表面场效应钝化效果.通过上述优化,制备出最佳的P-type emitter layer/aSi:H(i)/c-Si/a-Si:H(i)/N-type layer (inip)结构样品的少子寿命与implied-Voc分别达到2855μs和709 mV,表现出良好的钝化效果.应用于平面a-Si:H/c-Si异质结太阳电池,转换效率达到18.76%,其中开路电压达到681.5 mV,相对于未优化的电池提升了34.3 mV.将上述平面a-Si:H/c-Si异质结太阳电池作为底电池,对应的钙钛矿/硅异质结叠层太阳电池的开路电压达到1780 mV,转换效率达到21.24%,证明了上述工艺优化能够有效地改善叠层太阳电池中的硅异质结底电池的钝化及电池性能.     

Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μ c-Si:H layers were prepared by using a different total gas flow rate (F_total), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ～ 1.0~nm/s. The influence of F_total on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μ c-Si:H thin films were improved with increasing F_total. The variation of the microstructure was regarded as the main reason for the difference of the J--V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With F_total of 300~sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5~\AA/s (1~\AA=0.1\,nm).