Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

由激光诱导荧光方法探测光碎片分子取向的理论研究

采用密度矩阵方法,推导了从激光诱导荧光(LIF)强度中抽出光碎片取向参数的表达式.光碎片的取向由分子态多极矩描述.用于解离母分子和激发碎片分子的激光均为线偏振光,而探测荧光为非偏振光.激光诱导荧光强度是光碎片分子初始态多极矩、线强度因子和解离-激发几何因子的函数.光碎片的取向参数可以由测量荧光偏振比和计算动力学因子而获得.     

双(二茂铁羧酸)二烷基锡配合物的合成、表征及其抗癌活性

双(二茂铁羧酸)二烷基锡配合物的合成、表征及其抗癌活性     

普铝中Fe,Si元素的激光诱导击穿光谱测试条件及定量分析研究

为推广LIBS技术在电解铝行业中的应用，充分发挥其快速、免制样、多元素同时检测的优势。利用激光诱导击穿光谱技术首次对铝电解生产得到的普铝中Fe和Si元素进行测试研究，探索了合理的实验参数条件，在合理的实验条件基础上建立定标曲线并对普铝中Fe和Si元素进行定量分析，结合国标GB/T 7999-2015《铝及铝合金光电直读发射光谱分析方法》考察LIBS测试结果的准确性。以Nd∶YAG脉冲激光器基频1 064 nm激光作为光源激发等离子体，采用多通道光栅光谱仪和ICCD检测器检测、记录光谱信息。首先探测了LIBS光谱谱线，并对谱线进行了归属；综合分析，选取AlⅠ 266.04 nm，SiⅠ 288.15 nm与FeⅠ 259.92 nm作为分析谱线用于定量分析研究。分别研究了触发延迟时间、1Q延迟时间、激光器设定电压对光谱信号强度及信噪比SNR的影响。实验结果表明，触发延迟时间4 μs、1Q延迟时间170～190 μs、激光器设定电压560 V对于Si与Fe元素定量测试分析而言是较为合理的实验参数。根据谱线强度与元素浓度的关系，采用内标法建立了定标曲线，Si与Fe元素定标曲线中相关系数分别为0.919 72与0.952 11，其相对标准偏差（RSD）分别为7.25%与6.34%，说明谱线强度与元素浓度具有良好的线性关系，并基于此模型对12个样品进行了定量测试分析。将测试结果与光电直读发射光谱测得的结果进行比对，结果表明，Fe含量的相对误差绝对值在0~17.3%之间，Si含量相对误差绝对值在0~14.3%之间。依照国标GB/T 7999-2015《铝及铝合金光电直读发射光谱分析方法》中规定的实验室之间分析结果相对误差≤17%的规定，12个测试样品中，试样Si含量测试100%符合允许差要求，试样Fe含量测试91.7%符合允许差要求。该实验结果表明，LIBS技术在电解铝普铝Fe和Si元素检测中具有一定的推广利用价值。     

The influence of collision energy on magnetically tuned 6Li-6Li Feshbach resonance

The effect of collision energy on the magnetically tuned $^{6}$Li-$^{6}$Li Feshbach resonance (FR) is investigated theoretically by using the coupled-channel (CC) method for the collision energy ranging from 1 μ$ {\rm K} \cdot {k}_{\rm B}$ to 100 μ$ {\rm K} \cdot {k}_{\rm B}$. At the collision energy of 1 μ$ {\rm K} \cdot {k}_{\rm B}$, the resonance positions calculated are 543.152 Gs (s wave, the unit $1 {\rm Gs}=10^{-4} {\rm T}$), 185.109 Gs (p wave $|m_{l}| = 0$), and 185.113 Gs (p wave $|m_{l}| = 1$), respectively. The p-wave FR near 185 Gs exibits a doublet structure of 4 mGs, associated with dipole-dipole interaction. With the increase of the collision energy, it is found that the splitting width remains the same (4 mGs), and that the resonance positions of s and p waves are shifted to higher magnetic fields with the increase of collision energy. The variations of the other quantities including the resonance width and the amplitude of the total scattering section are also discussed in detail. The thermally averaged elastic rate coefficients at $T=10$, 15, 20, 25 K are calculated and compared.     

新型混价稀土氟化物KEuLaF~6: 结构设计和碱金属还原法相结合的新产品

用钾还原Eu_(0.5)La_(0.5)F_3合成了KEuLaF_6,新化合物属于UCl_3的填隙结构,gagarinite和NaNdF_4的相关型,空间群P(?),三方晶系,点阵参数:a=646.8(6),c=373.9(4)pm,c/a=0.578,V=135.47·10~6(12)pm~3,D_(pyc)=5.37,D_x=5.44g·cm~-3,Z=1.新化合物在空气中稳定,不溶于水.还报道新化合物的荧光图谱和红外图谱.     

氢离子注入对硅单晶电子辐照缺陷和氢泡形成的影响

以50keV和100keV能量的氢离子注入p型(100)直拉硅单晶薄膜。注入剂量为10¹⁵—2×10¹⁷H⁺/cm²。试样在HU-1300型超高压透射电子显微镜中进行电子辐照和原位加热动态观察。结果表明在20—300℃温度范围内与未注氢硅相比,注氢硅在相同的电子辐照条件下产生的电子辐照缺陷较少,电子辐照缺陷形成所需的潜伏时间较长。在电子显微镜中加热试样时于190℃开始观察到氢泡,190—220℃范围内氢泡逐渐产生并长大 关键词：     

用原子荧光法研究硒酸盐的微生物转化过程

本文用氢化物发生－原子荧光法研究水体中硒酸盐的微生物转化，其中单质硒是主要产物，同时有挥发态硒生成。在反应器中测定到了亚硒酸根，认为亚硝酸根是硒酸根是微生物卖座经的中间产物。     

14MeV钕的同位素反应截面的测量

报道了在13.5—14.6MeV中子能区用活化法以⁹³Nb(n,2n)^92mNb反应截面为中子注量标准测得的¹⁵⁰Nd(n,2n)¹⁴⁹Nd,¹⁴⁸Nd(n,2n)¹⁴⁷Nd和¹⁴²Nd(n,2n)¹⁴¹Nd的反应截面值.由13.5±0.2,14.1±0.1和14.6±0.2MeV中子引起的¹⁵⁰Nd(n,2n)¹⁴⁹Nd反应截面值分别为2037±85,1737±68,1657±65mb,¹⁴⁸Nd(n,2n)¹⁴⁷Nd反应截面值分别为1394±58,1416±54,1956±76mb,^{142Nd(n,2n)141Nd反应截面值分别为1501±59,1623±62,1764±111mb.单能中子由T(d,n)4He反应获得.文中还收集了已发表的数据以作比较.}     

配合物[Cu(HPHAc)2(py)2](H2PHAc=苯羟乙酸,py=吡啶)的合成和晶体结构

0引言苯羟乙酸[C6H5CH(OH)CO2H,简写成H2PHAc]是一种杀虫剂,和水杨酸相似,具有抑制微生物繁衍的作用。苯羟乙酸也是一种重要的分析试剂,已用于超痕量钼、金的示波极谱分析[1,2]。苯羟乙酸是一种α鄄羟基酸,它具有羧基和羟基,是双功能基配体,羧基和羟基可分别脱去氢,因此,可以有