排序方式: 共有58条查询结果,搜索用时 15 毫秒
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本文建立了双层有机电致发光器件中载流子在有机/有机界面复合的无序跳跃理论模型.计算表明:①内界面处电子和空穴的有效势垒高义决定OLEDs中的电子和空穴密度的分布,而电子与空穴密度又决定了电场强度的大小;且复合效率随着有效势垒高度的增加而增加;②当电压较低时,复合效率随载流子有效跳跃距离的增加而增加;当电压较高时,复合效率随载流子的有效跳跃距离的增加而减少;③当界面场强差较小时,有机层界面场强突变增大,复合效率增大,当界面场强差达临界值时,复合效率反而随着界面场强差的增大而减小.该理论模型可较好地解释相关的实验现象. 相似文献
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采用低温燃烧合成法制备了Gd2O3∶Eu3 纳米晶.用X射线衍射仪(XRD)、高分辨透射电子显微镜(HRTEM)和荧光光谱仪分别对样品的结构、形貌和发光性能进行了研究.结果表明,改变甘氨酸与稀土离子的比例(G/M)、退火温度可以制备出不同结构和晶粒尺寸的Gd2O3∶Eu3 纳米晶.在退火温度为800℃,G/M等于0.83和1.0时,均得到了纯立方相的Gd2O3∶Eu3 纳米晶,随着G/M的增加,Gd2O3∶Eu3 从立方相逐渐向单斜相转变.粉末的晶粒尺寸随着退火温度的增高而增大,晶粒尺寸在10~30 nm之间.立方相的Gd2O3∶Eu3 纳米晶主发射峰位置在612 nm(5D0→7F2跃迁),激发光谱中电荷迁移态发生了红移. 相似文献
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Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact 总被引:1,自引:0,他引:1
We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600-803 nm with a peak at 690 nm. 相似文献
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The composite that can absorb the high-performance electromagnetic(EM) wave is constructed into a sandwiched structure composed of carbon black(CB)/ethylene-vinyl acetate(EVA) and Ag naowires(Ag NWs). The Ag NWs sandwiched between two CB/EVA layers are used to improve the absorption properties of composite. The effects of EVA-to-CB weight ratio, concentration and diameter of Ag NWs with a thickness of 0.4 mm on microwave absorption are investigated.The results indicate that for an EVA-to-CB weight ratio of 1:3, Ag NW concentration of 1.0 mg/100 m L, and average diameter of 56 nm, the reflection loss(RL) of the composite is below-10 d B in a frequency range of 9.3 Ghz–18.0 GHz, with the minimum values of-40.0 d B and-25.6 d B at 13.5 GHz and 15.3 GHz, respectively. A finite element method(FEM)is used for calculating the RL of the composite. The calculated results are in agreement with the experimental data. 相似文献
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用全矢量的三维有限差分时域(finite-difference time-domain,简称FDTD)方法,研究了正方形单元结构金属光子晶体平板的增强传输效应以及局域性表面等离子体共振现象.这种增强效应来自于两个不同的等离子体共振机制:由长方形空气孔形成的局域波导共振以及由周期性结构引起的光子晶体共振效应.对于由长方形空气孔形成的局域波导共振模式,其等离子体波全部局域在整个长方形空气孔区域中.而由周期性引起的共振模式,其频率随着金属平板表面周期性的变化而变化,相应的等离子体波分布在长方形空气孔区域的两端.产生的表面等离子体都局域在长方形空气孔区域中,电场强度得到了显著的增强.
关键词:
光子晶体
金属平板
超强透射
表面等离子体 相似文献
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多孔硅镶嵌正丁胺/激光染料复合膜的荧光谱 总被引:2,自引:0,他引:2
多孔介质染料镶嵌膜有可能是发展固体染料激光器的一种途径[1].由于其所具有的微孔结构和大的比表面积,故使其成为激光染料理想的载体,以形成多孔硅基发光材料[2]. 我们用正丁胺作碳源,采用射频辉光(RF)放电法制备碳膜.利用正丁胺、R6G/聚乙二醇分别作碳源和蒸发源得到一种混合膜,如将其沉积在刚制备的新鲜多孔硅上则得到多孔硅镶嵌复合膜.本文着重研究了镶嵌于多孔硅中的正丁胺/R6G的荧光光谱,并考察了多孔硅衬底的改变对多孔硅镶嵌膜发光的影响.1 样品制备 (1)多孔硅的制备 制备多孔硅(PS)所用的材料为(100)晶向的p型单… 相似文献
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