有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型     

载流子迁移率对单层有机发光二极管复合效率的影响

建立了在单层有机发光二极管中电场强度不太大(E≤104Vcm)的情况下,载流子注入、传输和复合的理论模型.通过求解非线性Painleve方程得出了电场强度随坐标变化的解析函数关系式以及电流密度随电压变化关系,给出了电流密度以及器件的复合效率在不同的载流子迁移率情况下随电压变化关系图像.结果表明,复合效率受载流子迁移率影响较大,在器件中多数载流子应具有较低的迁移率,而少数载流子应具有较高的迁移率,这样有利于载流子的注入和传输,从而可提高发光效率.并且得出当空穴迁移率大于电子迁移率时,复合区域偏向阴极,反之亦 关键词： 单层有机发光二极管 复合效率 迁移率     

注入和输运对单层有机发光器件复合发光的影响

通过分析聚合物电致发光器件中载流子注入、输运、激子的解离与复合过程,提出了激子解离与复合的理论模型. 基于电流连续性方程和Poisson方程,给出了激子复合密度、电流密度及复合效率表达式.研究两电极与有机层之间在Ohmic和Fowler-Nordheim接触条件下载流子迁移率对器件中激子的复合密度及外加电压和注入势垒对器件电流和复合效率的影响.结果表明:1)在一个较宽的注入势垒和迁移率范围内,复合密度不是由两个注入电极的相对注入比决定而是由有机层电子和空穴迁移率之比所支配;2)固定阴极势垒,而阳极势垒由小变大时,器件电流由接触限制向空间电荷限制转变;3)复合效率随外电压升高先增加,当电压达一临界值时而陡降,存在一个最佳的注入势垒值.结果说明:电极与有机层的能带匹配及有机层间的迁移率匹配对器件复合发光有着极其重要的影响.其计算值与所报道的理论结果相符.     

双层有机发光二极管中复合效率和复合区域宽度的研究

本文建立了双层有机发光二极管中载流子的注入、输运和复合的理论模型.模型中采用了较合理的无序跳跃模型来处理界面问题.计算和讨论了空穴传输层厚度和内界面处的空穴势垒对器件复合效率和复合区域宽度的影响.结果表明:器件结构的变化导致电场强度在器件中的重新分布,空穴传输层厚度和内界面处空穴势垒的变化对器件的复合效率和复合区域宽度有重要影响.     

Q有机聚合物材料中光生载流子传输的跳跃输运

本文描述了跳跃模型在有机聚合物光折变材料中空间电荷场理论上的应用.在Feinberg针对无机光折变晶体提出的电荷传输过程模型-跳跃模型(Hopping Model)基础上,根据有机聚合物光折变材料的特点,考虑了光生载流子产生过程中的电子空穴对的复合过程(对复合和双分子复合过程)和激发光场的频率(即激发光子的能量)对光生载流子产生的影响,给出了有机聚合物材料中光生载流子产生的量子效率和光生载流子的分布密度及其跳跃率的新表示,完成外加调制光场和静电场同时作用下有机聚合物材料中光生载流子传输的跳跃方程,得到空间电荷场建立的动态过程和稳态时的解析表达式及其数值计算结果.     

有机电致发光器件中载流子的输运和复合发光

以高场作用下载流子对三角势垒的FowlerNordheim隧穿理论为基础,建立了单层有机电致发光器件中载流子输运和复合发光模型,给出了薄膜中电子空穴对的解离和复合概率及电子和空穴的密度分布.计算并讨论了外加电压和注入势垒对器件电流和复合效率的影响. 关键词： 电致发光器件 载流子输运 载流子复合     

迁移率对单层有机发光器件中复合率分布的影响

以载流子运动的扩散-漂移理论为基础,利用数值方法研究了有机发光层中双极载流子注入时的电势、电场、载流子浓度和复合率分布.结果表明:当两种载流子的迁移率相同实现平衡注入,并且当空穴和电子的复合为Langevin型时,复合率的分布曲线相当理想,参与复合的空穴和电子总量远大于其他情况,由此器件的发光性能也得到更大的优化.     

迁移率对单层有机发光器件中电场与载流子分布的影响

有机发光器件的宏观特性与有机层中的电场和载流子浓度分布密切相关。建立的有机电致发光器件模型是由两个金属电极中间夹一层有机发光薄膜材料组成的单层器件,金属与有机发光层之间为欧姆接触。模型以载流子运动的扩散-漂移理论为基础,利用数值方法研究了有机发光层中双极载流子注入时的电势、电场、载流子浓度和复合密度分布。分析结果表明:当两种载流子的迁移率相同时,电场强度、载流子浓度、复合密度的分布呈对称形式。而当电子和空穴的迁移率μn和μp相差比较大时,高迁移率的载流子不仅仅分布在注入端附近而且还有一小部分能够传输到另一端,而低迁移率的载流子只分布在其注入端附近;当μn、μp的大小相差不大时,载流子传输情况就介于两者之间。当μn/μp的比值变化时,电场强度的极大值向载流子迁移率小的注入端偏移。     

高场下界面势垒对双层有机器件复合发光的影响

以高场作用下载流子对三角势垒的Fowler-Nordheim隧穿理论为基础,建立了双层有机电致发光器件中载流子的输运和复合发光模型.计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响.该理论模型很好地解释了实验现象,并进一步证实了电场对复合区域的调制作用. 关键词： 有机电致发光 双层器件 界面势垒     

利用LiF空穴阻挡/激子限制层提高有机电致发光器件效率

将厚度为0.5 nm的LiF薄层引入到双层有机电致发光器件(OLEDs)的Alq3发光/电子传输层中作为空穴阻挡/激子限制层,研究其位置对器件光电性能的影响。发现LiF薄层在不同位置均明显提高器件的发光效率,当LiF薄膜距离TPD/Alq3界面20~40 nm时,OLEDs的最大发光效率约为4.5 cd/A,是对比器件(没有LiF薄层)的1.8倍。OLEDs的电流密度随着减小LiF薄层与阴极的距离而增大。研究表明,这是因为LiF薄层可有效阻挡进入复合发光区域未复合的过剩空穴并导致其积累,空穴积累可提高电子传输区域中的电场,提高其中电子的传输和从阴极的注入,从而提高复合发光区域中的载流子平衡及其复合几率;LiF薄层可将激子限制在复合发光区域,减少激子被阴极淬灭的几率。     

金属/有机界面势垒对单层有机电致发光器件发光效率的影响

基于高场下电荷的注入过程及激子的解离和复合过程,建立了单层有机发光器件电致发光(EL)效率的理论模型。计算表明：(1)当金属／有机界面势垒高度大于0．3eV时,器件的EL效率很低,降低金属／有机界面势垒可以显著提高器件的EL效率;(2)在较低偏压下,注入过程对器件的电致发光效率起主要作用,但在高偏压下复合过程起支配作用。这一模型可以阐明注入和复合过程对有机发光器件EL效率的影响,对选择发光材料、优化器件结构和提高器件EL效率具有指导意义。     

Dynamics of Polaron at Polymer/Polymer Interface

The migration of a polaron at polymer/polymer interface is believed to be of fundamental importance for the transport and light-emitting properties of conjugated polymer-based light emitting diodes. Based on the one- dimensional tight-binding Su-Schrieffer-Heeger （SSH） model, we have investigated polaron dynamics in a one- dimensional polymer/polymer system by using a nonadiabatic evolution method. In particular, we focus on how a polaron migrates through the conjugated polymer/polymer interface in the presence of external electric field. The results show that the migration of polaron at the interface depends sensitively on the hopping integrals, the potential barrier induced by the energy mismatch, and the strength of applied electric field which increases the polaron kinetic energy.     

The effect of interface hopping on inelastic scattering of oppositely charged polarons in polymers

The inelastic scattering of oppositely charge polarons in polymer heterojunctions is believed to be of fundamental importance for the light-emitting and transport properties of conjugated polymers. Based on the tight-binding SSH model, and by using a nonadiabatic molecular dynamic method, we investigate the effects of interface hopping on inelastic scattering of oppositely charged polarons in a polymer heterojunction. It is found that the scattering processes of the charge and lattice defect depend sensitively on the hopping integrals at the polymer/polymer interface when the interface potential barrier and applied electric field strength are constant. In particular, at an intermediate electric field, when the interface hopping integral of the polymer/polymer heterojunction material is increased beyond a critical value, two polarons can combine to become a lattice deformation in one of the two polymer chains, with the electron and the hole bound together, i.e., a self-trapped polaron-exciton. The yield of excitons then increases to a peak value. These results show that interface hopping is of fundamental importance and facilitates the formation of polaron-excitons.     

势垒硅掺杂对GaN基LED极化电场及其光电性能的影响

势垒硅掺杂对InGaN量子阱中的电场及LED器件的光电性能有着重要的影响。采用6×6 K·P方法计算了不同势垒硅掺杂浓度对量子阱中电场的变化,研究表明当势垒硅掺杂浓度>1e¹⁸ cm^-3时,阱垒界面处的电场强度会变大,这主要是由于硅掺杂浓度过高导致量子阱中界面电荷的聚集。进一步发现随着势垒掺杂浓度的升高,总非辐射复合随之增加,其中俄歇复合增加,而肖克莱-霍尔-里德复合随之减少,这是由于点陷阱的增大形成了缺陷能级。电流电压曲线表明势垒掺杂可有效改善GaN基LED的工作电压,这归于掺杂浓度的提高改善了载流子的传输特性。当掺杂浓度为1e¹⁸ cm^-3时,获得了较高的内量子效率,这主要是由于适当的势垒掺杂降低了量子阱中界面电荷的损耗。     

有机半导体异质界面电荷传输解析模型研究

有机半导体多层薄膜器件的性质很大程度上由有机-有机界面的传输性质所决定，但是现有的关于有机-有机界面的分析模型很难适用于实际器件的模拟.以Miller-Abrahams跳跃传导理论为基础，充分考虑有机-有机界面和金属-有机界面性质的不同，建立了一个新的描述有机-有机异质界面电荷传输的解析模型.结果表明有机异质界面的载流子传输不仅取决于界面的肖特基势垒，而且还取决于界面附近两边的电场强度和载流子浓度.此模型可用于有机半导体多层薄膜器件的电流密度、电场分布和载流子浓度分布的自洽计算. 关键词： 有机半导体 界面 载流子传输     

Energetic barrier reduction at the carbyne film interface

An abnormal injection current density through SiO₂ has been observed recently for both signs of charge carriers in experiments with an oriented carbyne film grown on a SiO₂ layer. The absence of a surface leakage current and the insulating property of SiO₂ were experimentally proved. The temperature dependence of the current through SiO₂ showed low activation energy and confirmed the model of thermally activated injection. A strong influence of the electric field applied transverse to the carbon chains on the current through SiO₂ was observed. A model of energetic barrier reduction at the carbyne interface based on the hypothesis of transverse inter-chain hopping in the electric field was proposed. It was shown that a transverse electric field can be induced in a carbyne film as in one-dimensional media. The first organic light emitting device with a carbyne-based effective injector was fabricated.     

An Electroluminescence Delay Time Model of Bilayer Organic Light-Emitting Diodes

Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence （EL） from bilayer organic light emitting diodes. The effect of injection, transport and recombination processes on the EL delay time is discussed, and the relationship between the internal interface barrier and the recombination time is revealed. ＂]~he results show that the EL delay time is dominated by the recombination process at lower applied voltage and by the transport process at higher applied voltage. When the internal interface barrier varies from 0.15 eV to 0.3 eV, the recombination delay time increases rapidly~ while the internal interface barrier exceeds about 0.3eV~ the dependence of the recombination delay time on applied voltage is almost undiversified, which may serve as a guideline for designing of a high-speed EL response device.     

Radiative life time of an exciton confined in a strained GaN/Ga1-xAlxN cylindrical dot: built-in electric field effects

The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically.The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included.Numerical calculations are performed using a variational procedure within the single band effective mass approximation.Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions.The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed.The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton.It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased,and that the exciton binding energy,the oscillator strength and the radiative lifetime each as a function of structural parameters (height and radius) sensitively depend on the strong built-in electric field.The obtained results are useful for the design of some opto-photoelectronic devices.